Power Transistors 2SA0963 (2SA963) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2209 Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Large collector power dissipation PC • Output of 4 W to 5 W can be obtained by a complementary pair with 2SC2209 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −40 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −1.5 A Peak collector current ICP −3 A Collector power dissipation * PC 10 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 0.5±0.1 4.6±0.2 1 3.05±0.1 2.3±0.2 3.8±0.3 ■ Features 11.0±0.5 120° 2 1.26±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126A-A1 Package 3 Note) *: TC = 25°C ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Collector-base voltage (Emitter open) VCBO IC = −1 mA, IE = 0 −50 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −40 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 −1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −10 µA Forward current transfer ratio * hFE VCE = −5 V, IC = −1 A 220 80 Max Unit Collector-emitter saturation voltage VCE(sat) IC = −1.5 A, IB = − 0.15 A −1.0 V Base-emitter saturation voltage VBE(sat) IC = −2 A, IB = − 0.2 A −1.5 V Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob VCB = −5 V, IE = 0.5 A, f = 200 MHz 150 MHz VCB = −5 V, IE = 0, f = 1 MHz 70 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE 80 to 160 120 to 220 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2003 SJD00006BED 1 2SA0963 IC VCE −4.0 Collector current IC (A) 8 6 4 −30 mA −3.0 −25 mA −2.5 −20 mA −2.0 −15 mA −1.5 −10 mA − 1.0 2 −5 mA − 0.5 0 0 40 80 120 160 200 −10 hFE IC TC = −25°C 100°C − 0.1 − 0.1 TC = 100°C − 0.1 − 0.1 VCB = −5 V f = 200 MHz TC = 25°C 200 160 120 80 40 0 0.01 0.1 80 60 40 20 −100 Collector-base voltage VCB (V) 1 10 Emitter current IE (A) ICEO Ta TC = 25°C 1 000 VCE = −12 V −50 −40 ICEO (Ta) ICEO (Ta = 25°C) 100 Collector-emitter voltage (V) (Resistor between B and E) VCER 120 −1 240 −1 −60 −25°C Collector current IC (A) VCER RBE IE = 0 f = 1 MHz TC = 25°C −10 25°C Collector current IC (A) Cob VCB 140 25°C 10 1 − 0.01 −1 TC = 100°C fT I E −25°C 100 −1 − 0.01 − 0.01 VCE = −5 V 1 000 Collector current IC (A) Collector output capacitance C (pF) (Common base, input open circuited) ob −8 VBE(sat) IC 25°C 0 −1 −6 Collector-emitter voltage VCE (V) IC / IB = 10 − 0.01 − 0.01 −4 Ambient temperature Ta (°C) −10 −1 −2 0 IC / IB = 10 −10 − 0.1 Transition frequency fT (MHz) Base-emitter saturation voltage VBE(sat) (V) −35 mA 10 Forward current transfer ratio hFE Collector power dissipation PC (W) −3.5 0 2 VCE(sat) IC TC = 25°C IB = −40 mA Collector-emitter saturation voltage VCE(sat) (V) PC Ta 12 −30 −20 100 10 −10 0 0.001 1 0.01 0.1 1 10 Base-emitter resistance RBE (kΩ) SJD00006BED 0 20 40 60 80 100 Ambient temperature Ta (°C) 120 2SA0963 Safe operation area Collector current IC (A) −10 −1 ICP Single pulse TC = 25°C IC t = 10 ms t=1s − 0.1 − 0.01 − 0.001 − 0.1 −1 −10 −100 Collector-emitter voltage VCE (V) SJD00006BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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