2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW • High-speed switching: tstg = 1.0 µ (typ.) • Complementary to 2SA1428. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 2 A Collector current Base current IB 0.5 A Collector power dissipation PC 1000 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range 1 JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) 2004-07-07 2SC3668 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 1.0 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 1.0 µA V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V VCE = 2 V, IC = 0.5 A 70 ― 240 hFE (2) VCE = 2 V, IC = 1.5 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.05 A ― ― 1.2 V VCE = 2 V, IC = 0.5 A ― 100 ― MHz VCB = 10 V, IC = 0, f = 1 MHz ― 30 ― pF ― 0.1 ― ― 1.0 ― ― 0.1 ― hFE (1) DC current gain (Note) Transition frequency fT Collector output capacitance Cob Turn-on time ton 20 µs Storage time tstg IB2 Switching time IB1 0 Input IB1 IB2 Output 30 Ω Collector-emitter breakdown voltage µs VCC = 30 V Fall time tf IB1 = −IB2 = 0.05 A, duty cycle ≤ 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C3668 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC3668 IC – VCE 25 Common emitter Ta = 25°C 18 (V) 20 15 12 1.6 10 8 1.2 6 0.8 4 IB = 2 mA 0.4 0 0 0.8 VCE IC (A) 2.0 Collector current VCE – IC 1.0 Collector-emitter voltage 2.4 0.6 IB = 5 mA 0.4 30 4 6 40 0.2 Common emitter Ta = 25°C 0 2 20 10 8 10 Collector-emitter voltage VCE 12 0 0 14 0.4 (V) 0.8 1.2 1.6 2.0 2.4 Collector current IC (A) VCE – IC VCE – IC 1.0 1.0 (V) 0.6 IB = 5 mA 20 10 30 0.4 40 0.2 Common emitter 0.4 0.8 1.2 1.6 2.0 10 0.6 20 30 0.4 40 50 0.2 Common emitter Ta = −55°C ) Ta = 100°C 0 0 0.8 VCE 0.8 Collector-emitter voltage Collector-emitter voltage VCE (V) IB = 5 mA 0 0 2.4 Collector current IC (A) 0.4 0.8 1.2 1.6 Collector current IC 2.0 2.4 (A) hFE – IC 1000 Common emitter Collector-emitter saturation voltage VCE (sat) (V) hFE DC current gain 1 300 Ta = 100°C 100 25 −55 50 30 10 0.01 VCE (sat) – IC VCE = 2 V 500 0.03 0.1 0.3 Common emitter 0.3 0.1 Ta = 100°C 0.05 −55 0.02 0.01 1 Collector current IC (A) IC/IB = 20 0.5 0.03 0.1 25 0.3 1 Collector current IC (A) 3 2004-07-07 2SC3668 VBE (sat) – IC IC – VBE 2.0 Common emitter IC/IB = 20 Common emitter VCE = 2 V IC (A) 3 Ta = −55°C 1 0.5 100 Collector current Base-emitter saturation voltage VBE (sat) (V) 5 25 0.3 0.1 0.01 0.03 0.1 0.3 1 1.5 1.0 0.5 Ta = 100°C 25 −55 2 Collector current IC (A) 0 0 0.4 0.8 1.2 Base-emitter voltage PC – Ta 1.6 VBE 2.0 (V) Safe Operating Area 5 3 1.0 1 (A) 0.8 Collector current IC Collector dissipation PC (W) 1.2 0.6 0.4 0.2 0 0 20 40 60 80 100 Ambient temperature Ta 120 140 160 (°C) IC max (pulsed)* 1 ms* 10 ms* IC max (continuous) 100 ms* 0.5 1 s* 0.3 DC operation Ta = 25°C 0.1 0.05 0.03 *: Single nonrepetitive pulse Ta = 25°C 0.01 Curves must be derated linearly with increase in 0.005 temperature 0.003 0.1 0.3 1 3 Collector-emitter voltage 4 10 VCE 30 100 (V) 2004-07-07 2SC3668 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07