SANKEN 2SC4130

2SC4130
Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor)
µA
400min
V
hFE
VCE=4V, IC=3A
10 to 30
16.9±0.3
100max
IC=25mA
IB
2
A
VCE(sat)
IC=3A, IB=0.6A
0.5max
PC
30(Tc=25°C)
W
VBE(sat)
IC=3A, IB=0.6A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–0.5A
15typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
50typ
pF
3.9
V
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
67
3
10
–5
0.3
–0.6
1max
2.2max
0.5max
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
0
1
2
3
(C
125˚C
V C E (sat)
0
0.02
4
0.05
0.1
Collector-Emitter Voltage V C E (V)
0.5
as
e
T
1
–5
5˚
t on •t stg • t f – I C Characteristics (Typical)
10
5
0.5
1
5
7
1
0.5
t on
tf
0.1
0.2
0.5
1
1.2
5
7
)
mp
0.5
0.3
1
10
100
1000
Time t(ms)
P c – T a Derating
30
5
s
he
at
si
nk
0.05
ite
Without Heatsink
Natural Cooling
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than 1%
0.1
fin
0.1
0.5
20
In
0.5
1
ith
1
W
m
1.0
10
s
Collector Curren t I C (A)
10
DC
0µ
s
0.8
1
M aximum Power Dissipa ti on P C (W)
10
1m
0.6
θ j-a – t Characteristics
20
5
0.4
4
Reverse Bias Safe Operating Area
20
10
0.2
Collector Current I C (A)
Safe Operating Area (Single Pulse)
Collect or Curr ent I C (A)
t s tg
V C C 200V
I C :I B 1 :–I B2 =10:1:2
Collector Current I C (A)
0.05
Transient Thermal Resistance
t o n • t s t g• t f ( µ s)
–55˚C
Switching Ti me
D C Cur r ent Gai n h F E
25˚C
0.1
0
Base-Emittor Voltage V B E (V)
5
125˚C
0.05
Te
0
5 7
(V C E =4V)
2
0.02
se
C
Collector Current I C (A)
h FE – I C Characteristics (Typical)
50
(Ca
5˚C
2
θ j- a ( ˚C/W)
0
–55˚C (Case Temp)
p)
25˚C (Case Tem
e Temp)
125˚C (Cas
12
50mA
Collector Current I C (A)
100m A
2
V B E (sat)
1
4
p)
˚C
200 mA
6
2
em
400mA
4
(V C E =4V)
7
25
IB
Collector Current I C (A)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E (sa t) (V )
A
0m
40
60 0m A
=1
6
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B C E
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
10 00 m A
2.4±0.2
2.2±0.2
VCC
(V)
7
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
1.35±0.15
mp)
Tstg
ø3.3±0.2
a
b
e Te
A
VEB=10V
V(BR)CEO
(Cas
7(Pulse14)
IC
IEBO
4.2±0.2
2.8 c0.5
4.0±0.2
V
10.1±0.2
0.8±0.2
V
10
µA
±0.2
400
VEBO
100max
p)
VCEO
VCB=500V
–55˚C
ICBO
Tem
V
Unit
ase
500
2SC4130
C (C
VCBO
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
Symbol
25˚
Unit
8.4±0.2
■Electrical Characteristics
2SC4130
Symbol
13.0min
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
10
Without Heatsink
2
0.01
2
5
10
50
100
Collector-Emitter Voltage V C E (V)
88
500
0.01
2
5
10
50
100
Collector-Emitter Voltage V C E (V)
500
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150