2SC4304 Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) hFE µA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF Tstg 3.9 V 0.1 100mA 1 I B =50mA 1 2 3 0.7max V C E (sat) –55˚C (Case Temp) 25˚C (Case Temp) 125˚C (Case Temp) V B E (sat) 1 p) –55˚C (Case Tem p) 25˚C (Case Tem Temp) 125˚C (Case 0.05 Collector-Emitter Voltage V C E (V) 0.1 0.5 1 0 7 5 10 5 0.5 1 3 t s tg V C C 250V I C :I B1 :–I B 2 =10:1.5:5 Transient Thermal Resistance t o n• t s t g• t f (µ s) –55˚C Sw it ching Time DC C urrent G ain h FE 25˚C 0.1 1 tf 0.5 t on 0.1 0.1 0.5 10 5 5 1 2 1 10 Collecto r Cur rent I C (A) 20 nk Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 30 si 1000 P c – T a Derating at 500 1000 he 100 Collector-Emitter Voltage V C E (V) 100 ite Collector Curr ent I C (A) 0.3 fin 50 0.5 In s ) 0.01 0.005 50 10 1 ith s C 0.1 0.01 1.2 W 0µ 1 0.005 2 1.0 4 Ma xim um Powe r Dissipat io n P C (W) 10 µs 5 ms =2 10 ( Tc Without Heatsink Natural Cooling 0.8 35 0.5 0.05 0.6 Time t(ms) 50 1m DC 0.1 0.05 5 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 1 0.2 Collector Current I C (A) Collector Current I C (A) 0.5 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 125˚C 0.05 1 3 (V C E =4V) 2 0.01 2 Collector Current I C (A) h FE – I C Characteristics (Typical) 50 (V C E =4V) 3 2 0 0.01 4 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) mp) 200m A 0 4.0max 0.7max e Te Collector Current I C (A) 300m A 2 2.4±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E Cas Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 700mA 500 mA 0 –0.35 tf (µs) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V CE Characteristics (Typical) 3 tstg (µs) ton (µs) ˚C ( –5 10 IB2 (A) 125 0.7 357 IB1 (A) Collector Current I C (A) 250 VBB2 (V) VBB1 (V) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 θ j - a ( ˚ C/W) IC (A) RL (Ω) 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b p) A 100max e Tem 3(Pulse6) IC VEB=7V IC=10mA (Cas V(BR)CEO 4.2±0.2 2.8 c0.5 4.0±0.2 IEBO V 10.1±0.2 0.8±0.2 V 7 µA ±0.2 800 VEBO 100max –55˚C VCEO VCB=800V mp) ICBO Unit e Te V Ratings (Cas 900 External Dimensions FM20(TO220F) (Ta=25°C) Conditions 25˚C VCBO Symbol 16.9±0.3 Unit 8.4±0.2 ■Electrical Characteristics Ratings Symbol 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 100 500 Collector-Emitter Voltage V C E (V) 1000 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 101