Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 ■ Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 40 V Collector-emitter voltage (E-B short) VCES 40 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 100 mA Peak collector current ICP 300 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C (0.375) 0.10 max. 5˚ Parameter 1.60±0.05 2 (0.80) 1 0.27±0.02 0.70+0.05 –0.03 • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 5˚ 0.85+0.05 –0.03 3 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package Marking Symbol: 2Y ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base cutoff current (Emitter open) ICBO Emitter-base cutoff current (Collector open) IEBO Conditions Max Unit VCB = 40 V, IE = 0 0.1 µA VEB = 4 V, IC = 0 0.1 µA 200 0.25 V hFE VCE = 1 V, IC = 10 mA Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA Base-emitter saturation voltage VBE(sat) IC = 10 mA, IB = 1 mA Forward current transfer ratio * Transition frequency VCB = 10 V, IE = −10 mA, f = 200 MHz fT Min Typ 60 0.17 1.0 450 V MHz Cob VCB = 10 V, IE = 0, f = 1 MHz Turn-on time ton Refer to the measurement circuit 17 ns Turn-off time toff 17 ns Storage time tstg 10 ns Collector output capacitance (Common base, input open circuited) 2 6 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R No-rank hFE 60 to 120 90 to 200 60 to 200 Product of no-rank is not classified and have no indication for rank. Publication date: January 2003 SJC00282BED 1 2SC4691J Measurement circuit ton , toff test circuit tstg test circuit 0.1 µF 0.1 µF VOUT VOUT A 220 Ω 50 Ω VIN = 10 V 3.3 kΩ VCC = 3 V 3.3 kΩ 50 Ω VIN = 10 V 0.1 µF VBB = −3 V 90 Ω 500 Ω VCC = 10 V 500 Ω 50 Ω VBB = 2 V 10% VIN 1 kΩ 910 Ω 10% VIN 10% 90% VOUT VOUT 90% ton 10% toff tstg (Waveform at A) PC Ta IC VCE 150 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 250 IB = 8 mA 125 Collector current IC (mA) 100 75 50 7 mA 6 mA 5 mA 4 mA 150 3 mA 2 mA 100 1 mA 50 25 0 200 0 25 50 75 100 125 0 150 Ambient temperature Ta (°C) 0 1 2 6 IC / IB = 10 −25°C 1 Ta = 75°C 25°C 10 Collector current IC (mA) 0.01 0.1 1 Ta = 75°C 120 25°C 100 80 100 −25°C 60 40 0 0.1 1 10 100 Collector current IC (mA) SJC00282BED 10 100 1 000 Collector current IC (mA) Cob VCB VCE = 1 V 20 1 0.1 hFE IC 160 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 5 140 0.1 0.1 2 4 −25°C 25°C Collector-emitter voltage VCE (V) VBE(sat) IC 10 3 IC / IB = 10 Ta = 75°C 1 000 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector power dissipation PC (mW) Ta = 25°C 1 100 f = 1 MHz Ta = 25°C 10 1 0.1 0 5 10 15 20 25 30 Collector-base voltage VCB (V) 35 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL