Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5419 Unit: mm 1.05 2.5±0.1 ±0.05 ■ Features 0.8 0.2 High collector to emitter voltage VCEO. 14.5±0.5 0.65 max. ■ Absolute Maximum Ratings (1.45) 1.0 1.0 ● 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 (Ta=25˚C) +0.1 * Unit Collector to base voltage VCBO –200 V Collector to emitter voltage VCEO –200 V Emitter to base voltage VEBO –5 V Peak collector current ICP – 0.1 A Collector current IC –70 mA Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 0.45–0.05 2.5±0.5 1 2.5±0.5 2 +0.1 Ratings 0.45–0.05 Symbol 3 2.5±0.1 Parameter Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package or more, and the board 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = –100µA, IB = 0 –200 V Emitter to base voltage VEBO IE = –1µA, IC = 0 –5 V VCE = –10V, IC = –5mA 30 *1 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = –50mA, IB = –5mA Transition frequency fT VCB = –5V, IE = 10mA, f = 200MHz 30 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 7 pF *1h FE 150 – –2.5 V Rank classification Rank P Q hFE 30 ~ 100 60 ~ 150 1 Transistor 2SA1961 PC — Ta IC — VCE 1.6 1.2 0.8 0.4 –120 –100 25˚C –100 IB=–1.0mA – 0.9mA – 0.8mA –80 – 0.7mA – 0.6mA –60 – 0.5mA – 0.4mA –40 – 0.3mA – 0.2mA –20 Ta=75˚C –25˚C –80 –60 –40 –20 – 0.1mA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 Ta=75˚C 25˚C –25˚C – 0.03 – 0.01 – 0.003 –3 –10 –30 –12 0 –100 –300 –1000 Collector current IC (mA) 24 210 180 150 Ta=75˚C 120 25˚C 90 –25˚C 60 30 0 –1 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –3 –10 –30 –1.2 Base to emitter voltage VBE (V) Cob — VCB VCE=–10V Forward current transfer ratio hFE –1 – 0.001 –1 –10 240 IC/IB=10 – 0.1 –8 hFE — IC –3 – 0.3 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC –10 –4 –100 –300 –1000 Collector current IC (mA) Collector output capacitance Cob (pF) 0 Collector to emitter saturation voltage VCE(sat) (V) VCE=–10V Ta=25˚C Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VBE –120 Collector current IC (mA) Collector power dissipation PC (W) 2.0 f=1MHz IE=0 Ta=25˚C 20 16 12 8 4 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V)