IGBT MODULE PBMB50B12 H-Bridge 50A 1200V CIRCUIT OUTLINE DRAWING P N G1 G3 E1 E3 U V G2 G4 8- fasten- tab No 110 E2 E4 4- fasten-tab No 250 Dimension(mm) Approximate Weight : 200g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PBMB50B12 Unit VCES VGES IC ICP PC Tj Tstg VISO 1200 +/ - 20 50 100 250 -40 to +150 -40 to +125 2500 2 - V V FTOR Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition A W °C °C V N•m Min. Typ. Max. 4.0 - 1.9 4200 0.25 0.40 0.25 0.80 1.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=50A,VGE=15V VCE=5V,IC=50mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 12 ohm RG= 20 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic µs Unit 50 100 A Symbol Test Condition Min. Typ. Max. VF trr IF=50A,VGE=0V IF=50A,VGE=-10V,di/dt=100A/µs - 1.9 0.2 2.4 0.3 Unit V µs Test Condition Min. Typ. Max. Unit Junction to Case - - 0.5 1.0 °C/W Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA µA V V pF Symbol IGBT DIODE Rth(j-c) PBMB50B12 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 100 15V Collector Current I C (A) 75 9V 50 8V 25 7V 0 0 2 TC=25℃ 16 I C=25A 10V 12V 4 6 8 Collector to Emitter Voltage V CE (V) VGE =20V 14 50A 12 10 8 6 4 2 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 12 10 8 6 4 2 4 8 12 16 RL=12Ω TC=25℃ 16 700 14 600 12 500 10 8 400 VCE =600V 6 300 400V 200 4 200V 2 100 0 0 20 0 50 100 Gate to Emitter Voltage V GE (V) 150 200 250 300 350 Total Gate Charge Qg (nC) Fig.6- Collector Current vs. Switching Time (Typical) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 1.4 20000 VGE=0V f=1MHZ TC=25℃ Cies 5000 2000 1000 Coes 500 200 Cres 100 VCC=600V R G=20Ω VGE=±15V TC=25℃ 1.2 Switching Time t (μs) 10000 Capacitance C (pF) 20 tOFF 1 0.8 tf 0.6 0.4 50 0.2 20 0 tON tr 0.1 0.2 0.5 1 2 5 10 Collector to Emitter Voltage 20 VCE 50 (V) 100 200 0 10 20 30 Collector Current IC (A) 40 50 Gate to Emitter Voltage V GE (V) 50A 0 16 800 100A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ IC=25A 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) 16 100A PBMB50B12 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) (Typical) 10 TC=25℃ TC=125℃ 90 toff 2 ton 1 tr 80 Forward Current I F (A) 5 Switching Time t (μs) 100 VCC=600V IC=50A VGE=±15V TC=25℃ 0.5 tf 0.2 70 60 50 40 30 20 0.1 0.05 10 5 10 20 50 100 200 0 300 0 1 2 4 Fig.10- Reverse Bias Safe Operating Area (Typical) Fig.9- Reverse Recovery Characteristics (Typical) 500 500 200 IF=50A TC=25℃ 200 trr 100 Collector Current I C (A) 100 50 20 10 5 R G=20Ω VGE=±15V TC≦125℃ 50 20 10 5 2 1 0.5 IRrM 2 1 0.2 0 50 100 150 200 250 0.1 300 0 400 800 1200 Collector to Emitter Voltage V CE (V) -di/dt (A/μs) fig11-Tansient Thermal Impedance 5 Tansient Thermal Impedance Rth (J-C) (ﾟC/W) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 3 Forward Voltage VF (V) Series Gate Impedance RG (Ω) 2 1 FRD -1 5x10 IGBT -1 2x10 -1 10 -2 5x10 -2 2x10 -2 Tc=25℃ 10 -3 5x10 1 Shot -3 2x10 -5 10 10 -4 -3 10 -2 10 Time t （s） -1 10 1 10 1 1600