ISC 2SD111

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD111
DESCRIPTION
·High Power Dissipation: PC= 100W@TC= 25℃
·High Current Capability: IC = 10A
APPLICATIONS
·Designed for power amplifier , power switching ,DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
10
A
IE
Emitter Current-Continuous
-10
A
IB
Base Current-Continuous
3
A
PC
Collector Power Dissipation @TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
B
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD111
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA ; RBE= ∞
80
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA ; IC= 0
10
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
2.5
V
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 10V; IC=0
10
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
30
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
10
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 10V
Output Capacitance
IE= 0; VCB= 50V; f= 1MHz
fT
COB
‹
CONDITIONS
O
Y
30-90
50-150
100-300
isc Website:www.iscsemi.cn
TYP.
B
B
hFE-2 Classifications
R
MIN
2
MAX
UNIT
300
1
MHz
200
pF