Power Transistors 2SD1964 Silicon NPN epitaxial planar type For power switching Unit: mm ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 25 A Collector current IC 15 A 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 ● 10.0±0.2 φ3.1±0.1 4.0 ● 14.0±0.5 ● Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 Solder Dip ● 0.7±0.1 ■ Features 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 Collector power TC=25°C PC Ta=25°C dissipation 50 Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 ■ Electrical Characteristics 5.08±0.5 1 (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 100V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 50 µA Collector to emitter voltage VCEO IC = 10mA, IB = 0 80 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 3A 90 hFE3 VCE = 2V, IC = 8A 30 VCE(sat)1 IC = 7A, IB = 0.35A 0.5 V VCE(sat)2 IC = 15A, IB = 1.5A 1.5 V VBE(sat)1 IC = 7A, IB = 0.35A 1.5 V VBE(sat)2 IC = 15A, IB = 1.5A 2.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage *h FE2 IC = 7A, IB1 = 0.7A, IB2 = – 0.7A, VCC = 50V V 260 20 MHz 0.5 µs 2.0 µs 0.2 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD1964 IC — VCE 50 40 30 20 TC=25˚C IB=300mA Collector current IC (A) (2) 10 16 200mA 140mA 12 100mA 80mA 8 60mA 40mA 4 (4) (3) 20mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 1 TC=100˚C 25˚C –25˚C 0.1 0.03 0.3 1 3 10 3 TC=–25˚C 1 0.3 25˚C 100˚C 0.1 0.03 0.1 0.3 1 3 0.03 0.01 0.1 0.3 Switching time ton,tstg,tf (µs) 30 10 3 1 Collector current IC (A) 10 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.3 1 3 10 30 Collector current IC (A) Area of safe operation (ASO) Non repetitive pulse TC=25˚C ICP t=1ms 3 tstg 1 ton 0.3 tf 0.1 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 0.03 0.01 10 3 100 0.3 3 300 30 100 1 VCE=10V 1 0.1 10 ton, tstg, tf — IC 1 0.1 Collector current IC (A) VCE=10V f=1MHz TC=25˚C 0.3 (1) Collector current IC (A) 10 0.1 0.3 1000 fT — IC 0.1 0.01 0.03 (2) IC/IB=10 0.01 0.01 0.03 10 1000 300 1 hFE — IC 30 Collector current IC (A) Transition frequency fT (MHz) 12 3 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.01 0.1 10 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C VBE(sat) — IC IC/IB=10 0.3 8 10 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 6 Forward current transfer ratio hFE 0 Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) (1) 0 2 VCE(sat) — IC 20 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 60 0 1 2 3 4 5 6 7 Collector current IC (A) 10ms IC 10 DC 3 1 0.3 0.1 0.03 0.01 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD1964 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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