Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification 5.0±0.1 ■ Features ■ Absolute Maximum Ratings Parameter Collector to 2SD2242 base voltage 2SD2242A Collector to 2SD2242 emitter voltage 2SD2242A Ratings 60 VCBO 60 5 V Peak collector current ICP 8 A Collector current IC 4 A Ta=25°C 15 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics ˚C ˚C current 2SD2242A Collector cutoff 2SD2242 current 2SD2242A Emitter cutoff current Collector to emitter 2SD2242 voltage 2SD2242A Forward current transfer ratio Base to emitter voltage 0.55±0.1 1 2 3 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package Internal Connection C B E Symbol 2SD2242 Conditions min typ max VCB = 60V, IE = 0 200 VCB = 80V, IE = 0 200 VCE = 30V, IB = 0 500 VCE = 40V, IB = 0 500 IEBO VEB = 5V, IC = 0 2 VCEO IC = 30mA, IB = 0 hFE1 VCE = 3V, IC = 0.5A 1000 hFE2* VCE = 3V, IC = 3A 2000 VBE VCE = 3V, IC = 3A 2.5 IC = 3A, IB = 12mA 2 IC = 5A, IB = 20mA 4 ICBO ICEO Collector to emitter saturation voltage VCE(sat) Transition frequency fT Turn-on time ton Storage time tstg Fall time tf FE2 150 –55 to +150 C1.0 2.25±0.2 0.65±0.1 1.05±0.1 (TC=25˚C) Parameter Collector cutoff *h W 2 1.2±0.1 0.55±0.1 C1.0 V 80 VEBO dissipation 0.35±0.1 V 80 VCEO Unit Emitter to base voltage Collector power TC=25°C 90° (TC=25˚C) Symbol 1.0 2.5±0.2 ● 13.0±0.2 4.2±0.2 ● High foward current transfer ratio hFE High-speed switching Allowing supply with the radial taping 18.0±0.5 Solder Dip ● 10.0±0.2 VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V 60 Unit µA µA mA V 80 10000 V V 20 MHz 0.5 µs 4 µs 1 µs Rank classification Rank hFE2 Q P 2000 to 5000 4000 to 10000 1 Power Transistors 2SD2242, 2SD2242A PC — Ta IC — VCE 10 TC=25˚C 15 (1) 10 5 IB=4.0mA 8 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 6 1.0mA 0.5mA 4 2 25˚C 6 TC=100˚C –25˚C 4 2 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 1 TC=100˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 TC=100˚C 104 1000 25˚C –25˚C 103 102 0.1 0.3 1 3 Area of safe operation (ASO) 300 100 30 10 3 1 0.1 10 Collector current IC (A) 100 3.2 IE=0 f=1MHz TC=25˚C 3000 10 0.01 0.03 10 Collector output capacitance Cob (pF) Forward current transfer ratio hFE 25˚C 2.4 Cob — VCB VCE=3V 10 1.6 10000 IC/IB=250 30 3 0.8 Base to emitter voltage VBE (V) 105 100 Collector current IC (A) 0.3 1 3 10 30 Rth(t) — t 10 ICP t=1ms IC 10ms 3 DC 1 0.3 2SD2242 2SD2242A 0.1 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 1000 (V) Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 100 (1) (2) 10 1 0.1 10–3 10–2 10–1 100 Collector to base voltage VCB (V) 1000 30 Collector current IC (A) 8 (2) 0 2 VCE=3V Collector current IC (A) (1) TC=Ta (2) Without heat sink (PC=2.0W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 10 Collector current IC (A) Collector power dissipation PC (W) 20 1 10 Time t (s) 102 103 104