PANASONIC 2SD2466A

Power Transistors
2SD2466, 2SD2466A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1604
Unit: mm
■ Features
Parameter
2SD2466
base voltage
2SD2466A
Collector to
2SD2466
Ratings
40
VCBO
V
50
20
VCEO
emitter voltage 2SD2466A
Unit
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
20
A
Collector current
IC
10
A
dissipation
40
PC
Ta=25°C
Junction temperature
Tj
Storage temperature
Tstg
■ Electrical Characteristics
0.75±0.1
1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
W
2
150
˚C
–55 to +150
˚C
0.7±0.1
2.54±0.2
5.08±0.4
7°
Collector power TC=25°C
2.6±0.1
1.2±0.15
1.45±0.15
V
40
2.9±0.2
3.0±0.2
(TC=25˚C)
Symbol
Collector to
15.0±0.3
■ Absolute Maximum Ratings
9.9±0.3
4.1±0.2 8.0±0.2
Solder Dip
●
φ3.2±0.1
+0.5
●
4.6±0.2
Low collector to emitter saturation voltage VCE(sat)
High-speed switching
Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw
13.7–0.2
●
(TC=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
VCB = 40V, IE = 0
50
VCB = 50V, IE = 0
50
IEBO
VEB = 5V, IC = 0
50
VCEO
IC = 10mA, IB = 0
hFE1
VCE = 2V, IC = 0.1A
45
hFE2*
VCE = 2V, IC = 3A
90
Collector to emitter saturation voltage
VCE(sat)
IC = 10A, IB = 0.33A
0.6
V
Base to emitter saturation voltage
VBE(sat)
IC = 10A, IB = 0.33A
1.5
V
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 10MHz
120
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
200
pF
Turn-on time
ton
0.3
µs
Storage time
tstg
0.4
µs
Fall time
tf
0.1
µs
Collector cutoff
2SD2466
current
2SD2466A
Emitter cutoff current
Collector to emitter
2SD2466
voltage
2SD2466A
Forward current transfer ratio
*h
FE2
ICBO
IC = 3A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 20V
20
µA
µA
V
40
260
Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
1
Power Transistors
2SD2466, 2SD2466A
PC — Ta
IC — VCE
VCE(sat) — IC
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2.0W)
70
60
IB=100mA
50
(1)
40
Collector to emitter saturation voltage VCE(sat) (V)
10
Collector current IC (A)
Collector power dissipation PC (W)
80
30
20
90mA
80mA
8
70mA
60mA
50mA
6
40mA
4
30mA
20mA
2
(2)
10
10mA
(3)
0
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
1
2
3
4
5
6
3
TC=100˚C
1
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.1
Collector to emitter voltage VCE (V)
VBE(sat) — IC
IC/IB=20
10
0.3
1
3
10
30
Collector current IC (A)
hFE — IC
fT — IC
IC/IB=20
25˚C
1
–25˚C
TC=100˚C
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
300
TC=100˚C
25˚C
100
–25˚C
30
10
3
Collector current IC (A)
0.3
ton
tstg
0.1
tf
3
4
Collector current IC (A)
2
1ms
DC
1
0.3
0.1
0.01
0.01
5
100
30
10
3
1
1
3
10
30
100
300
0.1
0.01 0.03
0.1
0.3
1
3
Collector current IC (A)
3
0.03
0.03
2
30
t=10ms
IC
10
2SD2466
1
1
10
Non repetitive pulse
TC=25˚C
30 ICP
3
0
3
Area of safe operation (ASO)
Collector current IC (A)
Switching time ton,tstg,tf (µs)
10
1
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=30 (IB1=–IB2)
VCC=20V
TC=25˚C
30
0.3
Collector current IC (A)
ton, tstg, tf — IC
100
300
0.3
1
0.1
30
Transition frequency fT (MHz)
3
VCE=10V
f=10MHz
TC=25˚C
VCE=10V
1000
2SD2466A
10
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
1000
1000
Collector to emitter voltage VCE (V)
10
Power Transistors
2SD2466, 2SD2466A
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
103
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3