Power Transistors 2SD2466, 2SD2466A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1604 Unit: mm ■ Features Parameter 2SD2466 base voltage 2SD2466A Collector to 2SD2466 Ratings 40 VCBO V 50 20 VCEO emitter voltage 2SD2466A Unit Emitter to base voltage VEBO 5 V Peak collector current ICP 20 A Collector current IC 10 A dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics 0.75±0.1 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package W 2 150 ˚C –55 to +150 ˚C 0.7±0.1 2.54±0.2 5.08±0.4 7° Collector power TC=25°C 2.6±0.1 1.2±0.15 1.45±0.15 V 40 2.9±0.2 3.0±0.2 (TC=25˚C) Symbol Collector to 15.0±0.3 ■ Absolute Maximum Ratings 9.9±0.3 4.1±0.2 8.0±0.2 Solder Dip ● φ3.2±0.1 +0.5 ● 4.6±0.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 13.7–0.2 ● (TC=25˚C) Parameter Symbol Conditions min typ max Unit VCB = 40V, IE = 0 50 VCB = 50V, IE = 0 50 IEBO VEB = 5V, IC = 0 50 VCEO IC = 10mA, IB = 0 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 3A 90 Collector to emitter saturation voltage VCE(sat) IC = 10A, IB = 0.33A 0.6 V Base to emitter saturation voltage VBE(sat) IC = 10A, IB = 0.33A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz 120 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 200 pF Turn-on time ton 0.3 µs Storage time tstg 0.4 µs Fall time tf 0.1 µs Collector cutoff 2SD2466 current 2SD2466A Emitter cutoff current Collector to emitter 2SD2466 voltage 2SD2466A Forward current transfer ratio *h FE2 ICBO IC = 3A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 20V 20 µA µA V 40 260 Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD2466, 2SD2466A PC — Ta IC — VCE VCE(sat) — IC TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 70 60 IB=100mA 50 (1) 40 Collector to emitter saturation voltage VCE(sat) (V) 10 Collector current IC (A) Collector power dissipation PC (W) 80 30 20 90mA 80mA 8 70mA 60mA 50mA 6 40mA 4 30mA 20mA 2 (2) 10 10mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 3 4 5 6 3 TC=100˚C 1 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.1 Collector to emitter voltage VCE (V) VBE(sat) — IC IC/IB=20 10 0.3 1 3 10 30 Collector current IC (A) hFE — IC fT — IC IC/IB=20 25˚C 1 –25˚C TC=100˚C 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 Collector current IC (A) 0.3 ton tstg 0.1 tf 3 4 Collector current IC (A) 2 1ms DC 1 0.3 0.1 0.01 0.01 5 100 30 10 3 1 1 3 10 30 100 300 0.1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 3 0.03 0.03 2 30 t=10ms IC 10 2SD2466 1 1 10 Non repetitive pulse TC=25˚C 30 ICP 3 0 3 Area of safe operation (ASO) Collector current IC (A) Switching time ton,tstg,tf (µs) 10 1 100 Pulsed tw=1ms Duty cycle=1% IC/IB=30 (IB1=–IB2) VCC=20V TC=25˚C 30 0.3 Collector current IC (A) ton, tstg, tf — IC 100 300 0.3 1 0.1 30 Transition frequency fT (MHz) 3 VCE=10V f=10MHz TC=25˚C VCE=10V 1000 2SD2466A 10 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 1000 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD2466, 2SD2466A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3