PANASONIC 2SD2486

Power Transistors
2SD2486
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
■ Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
8
A
Collector current
IC
4
A
Base current
IBP
2
A
Collector power TC=25°C
Ta=25°C
dissipation
25
PC
Junction temperature
Tj
Storage temperature
Tstg
4.2±0.2
7.5±0.2
φ3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
W
2
■ Electrical Characteristics
16.7±0.3
(TC=25˚C)
2.7±0.2
4.0
●
14.0±0.5
●
High forward current transfer ratio hFE which has satisfactory
linearity
Low collector to emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with
one screw
4.2±0.2
5.5±0.2
Solder Dip
●
10.0±0.2
0.7±0.1
■ Features
150
˚C
–55 to +150
˚C
(TC=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
VEB = 7V, IC = 0
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
60
hFE1
*
typ
VCB = 60V, IE = 0
max
Unit
10
µA
10
µA
V
VCE = 2V, IC = 0.8A
500
hFE2
VCE = 2V, IC = 2A
60
Collector to emitter saturation voltage
VCE(sat)
IC = 2A, IB = 50mA
0.5
V
Base to emitter saturation voltage
VBE(sat)
IC = 2A, IB = 50mA
1.5
V
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 10MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Forward current transfer ratio
*h
FE1
IC = 2A, IB1 = 50mA, IB2 = –50mA,
VCC = 50V
1000
2000
70
MHz
0.5
µs
3.6
µs
1.1
µs
Rank classification
Rank
hFE1
Q
R
500 to 1200 800 to 2000
1
Power Transistors
2SD2486
IC — VCE
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
(1)
25
20
15
(2)
10
IB=5.0mA
2.5
(3)
5
3.0mA
2.5mA
2.0
2.0mA
1.5mA
1.5
1.0mA
1.0
0.5mA
0.5
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
8
100˚C
0.1
0.03
3
25˚C
TC=100˚C
–25˚C
300
100
30
0.1
0.3
1
3
Switching time ton,tstg,tf (µs)
300
100
30
10
3
10
30
100
Collector to base voltage VCB (V)
10
100
30
10
10
0.1
0.3
1
3
10
Area of safe operation (ASO)
3
tstg
1
Non repetitive pulse
TC=25˚C
30
tf
ton
0.3
0.1
10 ICP
IC
t=1ms
3
10ms
1
DC
0.3
0.1
0.03
0.01
0.01
3
3
100
0.03
1
1
Collector current IC (A)
Pulsed tw=1ms
Duty cycle=1%
IC/IB=40 (IB1=–IB2)
VCC=50V
TC=25˚C
30
1000
0.3
300
1
0.01 0.03
10
ton, tstg, tf — IC
100
IE=0
f=1MHz
TC=25˚C
0.1
VCE=10V
f=10MHz
TC=25˚C
Collector current IC (A)
Cob — VCB
0.3
0.01
0.01 0.03
3
10
0.01 0.03
10
10000
1
0.1
0.03
1000
Collector current IC (A)
3000
–25˚C
0.1
3000
1000
1
25˚C
0.3
Collector current IC (A)
Transition frequency fT (MHz)
25˚C
0.3
1
fT — IC
30000
3000
0.1
TC=100˚C
3
VCE=2V
Forward current transfer ratio hFE
3
0.01
0.01 0.03
10
10000
10000
10
TC=–25˚C
IC/IB=40
30
hFE — IC
IC/IB=40
0.3
12
100000
30
1
10
100
Collector to emitter voltage VCE (V)
VBE(sat) — IC
100
Base to emitter saturation voltage VBE(sat) (V)
6
Collector current IC (A)
0
Collector output capacitance Cob (pF)
TC=25˚C
(4)
0
2
VCE(sat) — IC
4.0mA
Collector current IC (A)
Collector power dissipation PC (W)
3.0
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
30
0
1
2
3
4
Collector current IC (A)
5
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)