To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-821C (Z) Rev.3 Feb. 2001 Application • Dual band Amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz) • For 3.5 V nominal battery use Features • 2 in / 2 out dual band amplifire • Simple external circuit including output matching circuit • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 11 × 13.75 × 1.8 mm Typ • High efficiency : 50% Typ at nominal output power for E-GSM 43% Typ at 32.7 dBm for DCS1800 Pin Arrangement • RF-O-12 7 8 G 9 10 G 11 12 6 1 G 5 G 2 4 3 1: N/C 2: N/C 3: Pout DCS 4: Vdd DCS 5: Vdd GSM 6: Pout GSM 7: N/C 8: Vtxlo 9: Pin GSM 10: Vapc GSM 11: Vapc DCS 12: Pin DCS G: GND PF08109B Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage Vdd 8 V Supply current Idd GSM 3 A Idd DCS 2 A Vtxlo 4 V Vtxlo voltage Vapc voltage Vapc 4 V Input power Pin 10 dBm Operating case temperature Tc (op) −30 to +100 °C Storage temperature Tstg −30 to +100 °C Output power Pout GSM 5 W Pout DCS 3 W Note: The maximum ratings shall be valid over both the E-GSM-band (880 MHz to 915 MHz), and the DCS1800-band (1710 MHz to 1785 MHz). Electrical Characteristics for DC (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Drain cutoff current Ids 100 µA Vdd = 8 V, Vapc = 0 V Vapc control current Iapc 3 mA Vapc =2.2 V Vtxlo control current Itxlo 100 µA Vtxlo = 2.4 V Rev.3, Feb. 2001, page 2 of 23 PF08109B Electrical Characteristics for E-GSM mode (Tc = 25°C) Test conditions unless otherwise noted: f = 880 to 915 MHz, Vdd GSM = 3.5 V, Pin GSM = 0 dBm, Rg = Rl = 50 Ω, Tc = 25°C, Vapc DCS = 0.1 V Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Test Condition Frequency range f 880 915 MHz Total efficiency (Hi) ηT(Hi) 41 50 % 2nd harmonic distortion 2nd H.D. −45 −38 dBc 3rd harmonic distortion 3rd H.D. −45 −40 dBc Input VSWR VSWR (in) 1.5 3 Total efficiency (Lo) ηT(Lo) 27 35 % Pout GSM = 30.8dBm, Vtxlo = 2.4V, Vapc GSM = controlled Output power (1)(Hi) Pout (1)(Hi) 35.5 36.0 dBm Vapc GSM = 2.2V, Vtxlo = 0.1V Output power (1)(Lo) Pout (1)(Lo) 30.8 31.3 dBm Vapc GSM = 2.2V, Vtxlo = 2.4V Output power (2)(Hi) Pout (2)(Hi) 33.5 34.0 dBm Vdd GSM = 3.0V, Vapc GSM = 2.2V, Tc = +85°C, Vtxlo = 0.1V Output power (2)(Lo) Pout (2)(Lo) 28.8 29.3 dBm Vdd GSM = 3.0V, Vapc GSM = 2.2V, Tc = +85°C, Vtxlo = 2.4V Isolation −42 −36 dBm Vapc GSM = 0.2V, Vtxlo = 0.1V Isolation at DCS RF-output when GSM is active −23 −17 dBm Pout GSM = 35.5dBm, Vtxlo = 0.1V Measured at f = 1760 to 1830MHz Switching time t r, t f 1 2 µs Pout GSM = 0 to 35.5dBm, Vtxlo = 0.1V Stability No parasitic oscillation Vdd GSM = 3.0 to 5.1V, Pout GSM ≤ 35.5dBm, Vtxlo = 0.1, 2.4V, Vapc GSM ≤ 2.2V, GSMpulse. Rg = 50Ω, Output VSWR = 6 : 1 All phases Load VSWR tolerance No degradation Vdd GSM = 3.0 to 5.1V, t = 20sec., Pout GSM ≤ 35.5dBm, Vtxlo = 0.1, 2.4V, Vapc GSM ≤ 2.2V, GSM pulse. Rg = 50Ω, Output VSWR = 10 : 1 All phases Pout GSM = 35.5dBm, Vtxlo = 0.1V, Vapc GSM = controlled Rev.3, Feb. 2001, page 3 of 23 PF08109B Electrical Characteristics for DCS1800 mode (Tc = 25°C) Test conditions unless otherwise noted: f = 1710 to 1785 MHz, Vdd DCS = 3.5 V, Pin DCS = 0 dBm, Rg = Rl = 50 Ω, Tc = 25°C, Vapc GSM =0.1 V Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Frequency range f 1710 1785 MHz Total efficiency (Hi) ηT(Hi) 36 43 % 2nd harmonic distortion 2nd H.D. −45 −38 dBc 3rd harmonic distortion 3rd H.D. −45 −40 dBc Input VSWR VSWR (in) 1.5 3 Total efficiency (Lo) ηT(Lo) 17 25 % Pout DCS = 26.7dBm, Vapc DCS = controlled Output power (1) Pout (1) 32.7 33.2 dBm Vapc DCS = 2.2V, Output power (2) Pout (2) 30.7 31.2 dBm Vdd DCS = 3.0V, Vapc DCS = 2.2V, Tc = +85°C Isolation −42 −36 dBm Vapc DCS = 0.2V Isolation at GSM RF-output when DCS is active −10 0 dBm Pout DCS = 32.7dBm, Measured at f = 1710 to 1785MHz Switching time t r, t f 1 2 µs Pout DCS = 0 to 32.7dBm Stability No parasitic oscillation Vdd DCS = 3.0 to 5.1V, Pout DCS ≤ 32.7dBm, Vapc DCS ≤ 2.2V, DCS pulse. Rg = 50Ω, Output VSWR = 6 : 1 All phases Load VSWR tolerance No degradation Vdd DCS = 3.0 to 5.1V, Pout DCS ≤ 32.7dBm, t = 20sec., Vapc DCS ≤ 2.2V, DCS pulse. Rg = 50Ω, Output VSWR = 10 : 1 All phases Rev.3, Feb. 2001, page 4 of 23 Test Condition Pout DCS = 32.7dBm, Vapc DCS = controlled PF08109B Characteristic Curves High mode, f = 880 MHz 55 40 20 Pout (dBm) 10 0 50 Pout 45 40 Eff 35 −10 30 −20 25 −30 20 −40 15 −50 10 Eff (%) 30 f = 880 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω 5 −60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V) Low mode, f = 880 MHz 55 40 20 Pout (dBm) 10 0 −10 50 Pout 45 40 35 Eff 30 −20 25 −30 20 −40 15 −50 10 Eff (%) 30 f = 880 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 2.4 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω 5 −60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V) Rev.3, Feb. 2001, page 5 of 23 PF08109B High mode, f = 915 MHz 55 40 20 Pout (dBm) 10 0 50 Pout 45 40 Eff 35 −10 30 −20 25 −30 20 −40 15 −50 10 Eff (%) 30 f = 915 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω 5 −60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V) Low mode, f = 915 MHz 55 40 20 Pout (dBm) 10 0 −10 50 Pout 45 40 35 Eff 30 −20 25 −30 20 −40 15 −50 10 5 −60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V) Rev.3, Feb. 2001, page 6 of 23 Eff (%) 30 f = 915 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 2.4 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω PF08109B 38 High mode Pout (dBm) 37 36 Vdd = 3.5 V, Vapc = 2.2 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V Low mode 35 34 33 800 840 880 920 f (MHz) 960 1000 50 High mode 45 Eff (%) 40 35 30 25 20 15 800 Low mode 840 Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω High mode: Pout = 35.5 dBm Vtxlo = 0.1 V Low mode: Pout = 30.8 dBm Vtxlo = 2.4 V 880 920 f (MHz) 960 1000 Rev.3, Feb. 2001, page 7 of 23 PF08109B High mode 38 Pout (dBm) 37 Vdd = 3.5 V, Vapc = 2.2 V, Vtxlo = 0.1 V, Tc = 25°C, Rg = Rl = 50 Ω f = 880 MHz 36 f = 915 MHz 35 34 33 −6 −4 −2 0 Pin (dBm) 2 4 6 4 6 Low mode 38 Pout (dBm) 37 Vdd = 3.5 V, Vapc = 2.2 V, Vtxlo = 2.4 V, Tc = 25°C, Rg = Rl = 50 Ω 36 f = 880 MHz 35 f = 915 MHz 34 33 −6 Rev.3, Feb. 2001, page 8 of 23 −4 −2 0 Pin (dBm) 2 PF08109B High mode 60 55 f = 915 MHz 50 Eff (%) 45 f = 880 MHz 40 35 Pout = 35.5 dBm, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Tc = 25°C, Rg = Rl = 50 Ω 30 25 20 −6 −4 −2 0 Pin (dBm) 2 4 6 High mode 60 55 f = 915 MHz 50 Eff (%) 45 f = 880 MHz 40 35 Pout = 34.8 dBm, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Tc = 25°C, Rg = Rl = 50 Ω 30 25 20 −6 −4 −2 0 Pin (dBm) 2 4 6 Rev.3, Feb. 2001, page 9 of 23 PF08109B Low mode 60 55 50 Pout = 30.8 dBm, Vdd = 3.5 V, Vapc = control, Vtxlo = 2.4 V, Tc = 25°C, Rg = Rl = 50 Ω Eff (%) 45 40 f = 915 MHz 35 30 f = 880 MHz 25 20 −6 Rev.3, Feb. 2001, page 10 of 23 −4 −2 0 Pin (dBm) 2 4 6 PF08109B Eff (%) 60 f = 880 MHz, Vdd = 3.5 V, Vapc = control, 50 Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω High mode: Vtxlo = 0.1 V 40 Low mode: Vtxlo = 2.4 V 30 Low mode 20 High mode 10 26 28 30 32 34 Pout (dBm) 36 38 Id (A) 4 f = 880 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, 3 Tc = 25°C, Rg = Rl = 50 Ω High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V 2 1 High mode Low mode 0 −20 −10 0 10 20 Pout (dBm) 30 40 Rev.3, Feb. 2001, page 11 of 23 PF08109B 60 Eff (%) 50 40 Low mode 30 High mode 20 10 26 28 30 f = 915 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V 32 34 Pout (dBm) 36 38 Id (A) 4 f = 915 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, 3 Tc = 25°C, Rg = Rl = 50 Ω High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V 2 High mode 1 Low mode 0 −20 Rev.3, Feb. 2001, page 12 of 23 −10 0 10 20 Pout (dBm) 30 40 PF08109B f = 1710 MHz 40 20 Pout (dBm) 10 45 40 35 30 0 −10 Pout 25 Eff (%) 30 50 f = 1710 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω Eff −20 20 −30 15 −40 10 −50 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V) f = 1785 MHz 40 20 Pout (dBm) 10 45 40 35 30 0 −10 Pout Eff 25 −20 20 −30 15 −40 10 Eff (%) 30 50 f = 1785 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω −50 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V) Rev.3, Feb. 2001, page 13 of 23 PF08109B 50 45 40 Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω Eff (%) 35 f = 1785 MHz 30 25 f = 1710 MHz 20 15 10 22 Rev.3, Feb. 2001, page 14 of 23 24 26 28 30 Pout (dBm) 32 34 PF08109B 35 Pout (dBm) 34 33 32 31 Vdd = 3.5 V, Vapc = 2.2 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω 30 1600 1650 1700 1750 f (MHz) 1800 1850 1900 50 45 Pout = 32.7 dBm 40 Eff (%) 35 30 25 Pout = 26.7 dBm Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω 20 15 10 1600 1650 1700 1750 f (MHz) 1800 1850 1900 Rev.3, Feb. 2001, page 15 of 23 PF08109B 35 Pout (dBm) 34 Vdd = 3.5 V, Vapc = 2.2 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω f = 1710 MHz 33 f = 1785 MHz 32 31 30 −6 −4 −2 0 Pin (dBm) 2 4 6 4 6 50 Eff (%) 45 Vdd = 3.5 V, Vapc = control, Pout = 32.7 dBm, Tc = 25°C, Rg = Rl = 50 Ω f = 1785 MHz f = 1710 MHz 40 35 30 25 −6 Rev.3, Feb. 2001, page 16 of 23 −4 −2 0 Pin (dBm) 2 PF08109B 35 Eff (%) 30 Vdd = 3.5 V, Vapc = control, Pout = 26.7 dBm, Tc = 25°C, Rg = Rl = 50 Ω f = 1785 MHz 25 f = 1710 MHz 20 15 10 −6 −4 −2 0 Pin (dBm) 2 4 6 0 Cross band Isolation at GSM RF-output when DCS is active (dBm) −5 −10 Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω −15 f = 1785 MHz −20 f = 1710 MHz −25 −30 −35 15 20 25 Pout (dBm) 30 35 Rev.3, Feb. 2001, page 17 of 23 PF08109B 40 39 Pout (dBm) 38 GSM Hi mode Pin = 0 dBm, Vapc = 2.2 V, Tc = 25°C, Vtxlo = 0.1 V 37 36 35 34 33 f = 880 MHz f = 915 MHz 32 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V) 38 37 Pout (dBm) 36 GSM Lo mode Pin = 0 dBm, Vapc = 2.2 V, Tc = 25°C, Vtxlo = 2.4 V 35 34 33 32 31 f = 880 MHz f = 915 MHz 30 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V) Rev.3, Feb. 2001, page 18 of 23 PF08109B 50 45 Eff (%) 40 35 30 25 GSM Hi mode Pin = 0 dBm, Po = 35.5 dBm, Tc = 25°C, Vtxlo = 0.1 V f = 880 MHz f = 915 MHz 20 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V) 40 35 Eff (%) 30 25 20 15 GSM Lo mode Pin = 0 dBm, Po = 30.8 dBm, Tc = 25°C, Vtxlo = 2.4 V f = 880 MHz f = 915 MHz 10 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V) Rev.3, Feb. 2001, page 19 of 23 PF08109B 38 37 Pout (dBm) 36 35 DCS Pin = 0 dBm, Vapc = 2.2 V, Tc = 25°C f = 1710 MHz f = 1785 MHz 34 33 32 31 30 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V) 45 Eff (%) 40 35 30 25 DCS Pin = 0 dBm, Po = 32.7 dBm, Tc = 25°C f = 1710 MHz f = 1785 MHz 20 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V) Rev.3, Feb. 2001, page 20 of 23 PF08109B Isolation at DCS RF-output when GSM is active (dBm) 0 −10 −20 f = 880 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω −30 measured at f = 1760 MHz −40 −50 −60 10 15 20 25 30 Pout (dBm) 35 40 20 25 30 Pout (dBm) 35 40 Isolation at DCS RF-output when GSM is active (dBm) 0 −10 −20 f = 915 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25°C, Rg = Rl = 50 Ω −30 measured at f = 1830 MHz −40 −50 −60 10 15 Rev.3, Feb. 2001, page 21 of 23 PF08109B Package Dimensions Unit: mm 1.8 ± 0.2 G 7 9 6 10 5 G G 11 4 12 3 1 11.0 ± 0.3 (10.8) 11.0 ± 0.3 8 G 2 (Upper side) 7 8 G 9 10 G 11 12 13.75 ± 0.3 13.75 ± 0.3 (1.4) (1.2) (0.8) (1.4) (1.0) (1.4) (0.8) (0.8) (1.4) (1.45) (1.1) (3.7) (3.7) (2.5) (2.5) (Bottom side) Rev.3, Feb. 2001, page 22 of 23 (1.2) (4.6) (1.0) (3.4) (4.6) (1.0) (1.0) (1.0) (2.8) (1.0) (1.0) (2.4) (2.4) 11.0 ± 0.3 (1.4) (1.4) (3.3) (2.6) (2.6) (3.3) 6 5 1 G G 4 3 2 1: N/C 2: N/C 3: Pout DCS 4: Vdd DCS 5: Vdd GSM 6: Pout GSM 7: N/C 8: Vtxlo 9: Pin GSM 10: Vapc GSM 11: Vapc DCS 12: Pin DCS G: GND Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. Hitachi Code JEDEC JEITA Mass (reference value) RF-O-12 PF08109B Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. http://www.renesas.com Copyright © 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan. Colophon 0.0 Rev.3, Feb. 2001, page 23 of 23