2SK1157, 2SK1158 Silicon N-Channel MOS FET ADE-208-1248 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1157 Symbol Ratings Unit VDSS 450 V 2SK1158 500 Gate to source voltage VGSS Drain current ID Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 ±30 V 7 A 28 A 7 A Channel dissipation Pch* 60 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 2 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1157, 2SK1158 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1157 V(BR)DSS 450 breakdown voltage 2SK1158 500 Typ Max Unit Test conditions — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±25 V, VDS = 0 Zero gate voltage 2SK1157 I DSS — — 250 µA VDS = 360 V, VGS = 0 drain current 2SK1158 Gate to source cutoff voltage VDS = 400 V, VGS = 0 VGS(off) 2.0 — 3.0 Static Drain to source 2SK1157 RDS(on) — 0.6 0.8 on state resistance — 0.7 0.9 2SK1158 V I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 Forward transfer admittance |yfs| 4.0 6.5 — S I D = 4 A, VDS = 10 V *1 Input capacitance Ciss — 1050 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 280 — pF f = 1 MHz Reverse transfer capacitance Crss — 40 — pF Turn-on delay time t d(on) — 15 — ns I D = 4 A, VGS = 10 V, Rise time tr — 55 — ns RL = 7.5 Turn-off delay time t d(off) — 95 — ns Fall time tf — 40 — ns Body to drain diode forward voltage VDF — 0.95 — V I F = 7 A, VGS = 0 Body to drain diode reverse recovery time t rr — 320 — ns I F = 7 A, VGS = 0, diF/dt = 100 A/µs Note: 1. Pulse test 3 2SK1157, 2SK1158 Power vs. Temperature Derating Maximum Safe Operation Area 50 20 5 2 Ar (o n) PW DS O is per Lim at ite ion d in by th R is 40 10 D C = O pe 1 10 150 ) 25 2SK1157 2SK1158 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) 20 6V 16 Drain Current ID (A) 16 Pulse Test 12 8 ot = Typical Transfer Characteristics Typical Output Characteristics 7V sh ) Ta = 25°C 1 20 10 V (1 °C 0.1 50 100 Case Temperature TC (°C) m (T C 0.5 µs s tio n µs m s ra 1.0 0.05 Drain Current ID (A) 0 0.2 0 10 10 ea 20 Drain Current ID (A) Channel Dissipation Pch (W) 60 5V 12 –25°C VDS = 20 V Pulse Test TC = 25°C 75°C 8 4 4 VGS = 4 V 0 4 10 30 40 20 Drain to Source Voltage VDS (V) 50 0 2 6 8 4 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 2SK1157, 2SK1158 10 Pulse Test 8 10 A 6 4 5A 2 0 ID = 2 A 4 12 16 8 Gate to Source Voltage VGS (V) 20 5 0.5 Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 0.8 VGS = 10 V Pulse Test ID = 10 A 2, 5 A 0.4 0 –40 0 80 120 40 Case Temperature TC (°C) 15 V 0.2 0.1 0.05 0.5 1.0 10 2 5 20 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current 2.0 1.2 VGS = 10 V 1.0 Static Drain to Source on State Resistance vs. Temperature 1.6 Pulse Test 2 160 50 20 VDS = 20 V Pulse Test –25°C TC = 25°C 10 75°C 5 2 1.0 0.5 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 5 2SK1157, 2SK1158 Typical Capacitance vs. Drain to Source Voltage Body to Drain Diode Reverse Recovery Time 5,000 2,000 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test Capacitance C (pF) Reverse Recovery Time trr (ns) 5,000 1,000 500 200 100 50 0.2 Ciss 1,000 VGS = 0 f = 1 MHz Coss 100 Crss 10 5 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 0 20 50 Switching Characteristics Dynamic Input Characteristics 500 20 500 20 10 30 40 Drain to Source Voltage VDS (V) VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% 400 VDS 300 VDD = 100 V 250 V 400 V 16 12 VGS 200 8 ID = 7 A 100 4 VDD = 400 V 250 V 100 V 0 0 6 8 24 32 16 Gate Charge Qg (nc) 40 Switching Time t (ns) • Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) • 200 td (off) 100 50 tf tr 20 td (on) 10 5 0.2 0.5 5 1.0 2 Drain Current ID (A) 10 20 2SK1157, 2SK1158 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 16 Pulse Test 12 8 4 5, 10 V VGS = 0, –10 V 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) 0 Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch–c (t) = γS (t) · θch–c θch–c = 2.08°C/W, TC = 25°C PDM 0.02 0.03 1 0.01 10 µ 0.01 ulse P ot Sh T 100 µ 1m 10 m Pulse Width PW (s) 100 m PW D = PW T 1 10 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 10 % 50 Ω Vin = 10 V . 30 V VDD = . td (on) 90 % tr 90 % td (off) tf 7 2SK1157, 2SK1158 Package Dimensions 8 2SK1157, 2SK1158 Cautions 1. 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