HITACHI 2SK2390

2SK2390
Silicon N-Channel MOS FET
November 1996
Application
High speed power switching
Features
•
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for Switching regulator, DC-DC converter
Avalanche ratings
Outline
TO-220CFM
D
12
3
1. Gate
2. Drain
3. Source
G
S
2SK2390
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
12
A
48
A
12
A
12
A
12
mJ
20
W
Drain peak current
ID(pulse)*
Body to drain diode reverse drain current
IDR
Avalanche current
Avalanche energy
IAP*
3
EAR*
3
2
1
Channel dissipation
Pch*
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
3. Value at Tch = 25 °C, Rg ≥ 50 Ω
2
2SK2390
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS
—
—
250
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
1.0
—
2.25
V
ID = 1 mA, VDS = 10 V
—
0.075
0.09
Ω
ID = 6 A
1
VGS = 10 V*
—
0.11
0.15
Ω
ID = 6 A
1
VGS = 4 V*
VGS(off)
Static drain to source on state RDS(on)
resistance
Forward transfer admittance
|yfs|
4
8
—
S
ID = 6 A
1
VDS = 10 V*
Input capacitance
Ciss
—
450
—
pF
VDS = 10 V
Output capacitance
Coss
—
240
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
60
—
pF
f = 1 MHz
Turn-on delay time
td(on)
—
10
—
ns
ID = 6 A
Rise time
tr
—
55
—
ns
VGS = 10 V
Turn-off delay time
td(off)
—
100
—
ns
RL = 5 Ω
Fall time
tf
—
70
—
ns
Body to drain diode forward
voltage
VDF
—
1.05
—
V
IF = 12 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
95
—
ns
IF = 12 A, VGS = 0,
diF / dt = 50 A / µs
Note
1. Pulse Test
3
2SK2390
Power vs. Temperature Derating
30
20
10
I D (A)
100
50
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
200
40
10
10
10
20
PW
DC
5
era
50
100
150
Case Temperature
2
1
200
1s
Ta = 25 °C
1
Tc (°C)
Typical Output Characteristics
10 V
6V
5V
Typical Transfer Characteristics
V DS = 10 V
Pulse Test
4V
12
3.5 V
8
3V
4
2.5 V
ID
(A)
16
16
12
8
4
VGS = 2 V
0
2
5
10 20
50 100
Drain to Source Voltage V DS (V)
20
Pulse Test
Drain Current
20
I D (A)
s(
tio
ho
Operation in
n(
t)
Tc
this area is
=2
limited by R DS(on)
5°
C)
0.2
Drain Current
s
0m
Op
s
1m
0.5
0
4
=1
µs
0µ
2
4
6
Drain to Source Voltage
8
10
V DS (V)
0
–25°C
Tc = 75°C
25°C
2
4
6
Gate to Source Voltage
8
10
V GS (V)
2SK2390
Drain to Source On State Resistance
R DS(on) ( Ω )
1.2
Pulse Test
1.6
I D = 15 A
10 A
0.8
5A
0.4
Static Drain to Source on State Resistance
R DS(on) ( Ω)
0
2
4
6
Gate to Source Voltage
8
Pulse Test
0.4
I D = 15 A
0.3
10 A
V GS = 4 V
5A
0.1
5 A, 10 A, 15 A
0
–40
0.2
VGS = 4 V
0.1
10 V
0.05
0.02
0.01
1
2
5
10 20
50
Drain Current I D (A)
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.5
0.2
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
10
10 V
0
40
80
120
160
Case Temperature Tc (°C)
Forward Transfer Admittance |yfs| (S)
V DS(on) (V)
2.0
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
20
100
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25 °C
75 °C
25 °C
2
1
0.5
0.2
0.2
V DS = 10 V
Pulse Test
0.5
1
2
5
10
20
Drain Current I D (A)
5
2SK2390
200
100
50
20
10
5
0.1
Coss
100
50
V DD = 50 V
25 V
10 V
8
16
24
32
Gate Charge Qg (nc)
12
8
4
0
40
10
20
30
40
50
Switching Characteristics
500
Switching Time t (ns)
I D = 15 A
40
VGS = 0
f = 1 MHz
Drain to Source Voltage V DS (V)
V GS (V)
16
VGS
Crss
0
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
6
200
10
20
80 V
DD = 10 V
25 V
50 V
60
VDS
0
Ciss
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
Dynamic Input Characteristics
20
500
20
di/dt = 50 A/µs
V GS = 0, Ta = 25°C
100
Typical Capacitance vs.
Drain to Source Voltage
1000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
Body to Drain Diode Reverse
Recovery Time
200
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
t d(off)
100
tf
50
tr
20
10
5
0.2
t d(on)
0.5
1
2
Drain Current
5
10
I D (A)
20
2SK2390
Reverse Drain Current vs.
Souece to Drain Voltage
Maximun Avalanche Energy vs.
Channel Temperature Derating
Repetive Avalanche Energy E AR (mJ)
20
Reverse Drain Current I DR (A)
Pulse Test
16
12
10 V
8
5V
V GS = 0, –5 V
4
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
20
I AP = 12 A
V DD = 25 V
duty < 0.1 %
Rg > 50 Ω
16
12
2.0
V SD (V)
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit and Waveform
V DS
Monitor
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
7
2SK2390
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 6.25 °C/W, Tc = 25 °C
0.1
0.05
0.03
0.01
10 µ
PDM
0.02
1
lse
0.0
pu
t
ho
1s
D=
PW
T
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
10
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
2SK2390
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1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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9