ETC 2SJ529(L)

2SJ529(L),2SJ529(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-654A (Z)
2nd. Edition
June 1, 1998
Features
• Low on-resistance
R DS(on) = 0.12 Ω typ.
• 4 V gete drive devices
• High speed switching
Outline
DPAK–2
4
4
D
1 2
G
1 2
S
3
3
1. Gate
2. Drain
3. Source
4. Drain
2SJ529(L),2SJ529(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–10
A
–40
A
–10
A
–10
A
8.5
mJ
20
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Avalenche current
Avalenche energy
I AP
Note1
Note3
EAR
Note3
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SJ529(L),2SJ529(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
–60
—
—
V
I D = –10mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain current
I DSS
—
—
–10
µA
VDS = –60 V, VGS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.0
V
I D = –1mA, VDS = –10V
Static drain to source on state
RDS(on)
—
0.12
0.16
Ω
I D = –5A, VGS = –10V Note4
resistance
RDS(on)
—
0.17
0.24
Ω
I D = –5A, VGS = –4V Note4
Forward transfer admittance
|yfs|
4.5
7.5
—
S
I D = –5A, VDS = –10V
Input capacitance
Ciss
—
580
—
pF
VDS = –10V
Output capacitance
Coss
—
300
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
85
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
10
—
ns
VGS = –10V, ID = –5A
Rise time
tr
—
40
—
ns
RL = 6Ω
Turn-off delay time
t d(off)
—
85
—
ns
Fall time
tf
—
60
—
ns
Body–drain diode forward voltage
VDF
—
–1.2
—
V
I F = –10A, VGS = 0
Body–drain diode reverse
recovery time
t rr
—
60
—
ns
I F = –10A, VGS = 0
diF/ dt = 50A/µs
Note:
Note4
4. Pulse test
3
2SJ529(L),2SJ529(S)
Main Characteristics
Power vs. Temperature Derating
–100
I D (A)
Drain Current
30
20
10
50
100
Case Temperature
150
200
Tc (°C)
–20
0
=
O
pe
–0.5
10
m
s
ra
tio
n
–2
Operation in
this area is
limited by R DS(on)
µs
µs
(1
(T
sh
ot
)
c=
25
)
–0.2
Ta = 25 °C
–0.1
–0.1 –0.3
–1 –3
–10 –30 –100
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
–10
–10 V
–5 V
V DS = –10 V
Pulse Test
–4 V
ID
Pulse Test
(A)
–3.5 V
–6
–3 V
–4
–2
–2.5 V
Drain Current
I D (A)
–8
C
–5
Typical Output Characteristics
–10
PW
D
–10
–1
10
10
s
m
Channel Dissipation
–50
0
Drain Current
Maximum Safe Operation Area
1
Pch (W)
40
–8
–6
–4
Tc = 75 °C
25 °C
–2
–25 °C
VGS = –2 V
0
4
–2
–4
–6
Drain to Source Voltage
–8
–10
V DS (V)
0
–1
–2
–3
Gate to Source Voltage
–4
–5
V GS (V)
2SJ529(L),2SJ529(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.8
I D = –5 A
–0.6
–0.4
–2 A
–0.2
0
–1 A
–4
–8
–12
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Gate to Source Voltage
–16
0.1
0
–40
I D = –5 A –2 A
V GS = –4 V
–1 A
–5 A
–1, –2 A
–10 V
0
40
80
Case Temperature
VGS = –4 V
0.2
0.1
–10 V
0.05
0.02
Pulse Test
0.01
–0.1
–0.3
V GS (V)
0.4
0.2
0.5
–20
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.3
Drain to Source On State Resistance
R DS(on) ( Ω )
Pulse Test
120
Tc
(°C)
160
–1
–3
Drain Current
–10
–30
–100
I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
–1.0
Static Drain to Source on State Resistance
vs. Drain Current
1
20
10
Ta = –25 °C
5
25 °C
2
75 °C
1
0.5
0.1
–0.1 –0.2
V DS = –10 V
Pulse Test
–0.5
–1
–2
–5
–10
Drain Current I D (A)
5
2SJ529(L),2SJ529(S)
Reverse Recovery Time trr (ns)
500
Body–Drain Diode Reverse
Recovery Time
2000
Ciss
Capacitance C (pF)
200
100
50
20
500
200
Crss
100
50
Coss
10
20
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
10
0
–20
–40
I D = –10 A
V DS
V GS
–60
–80
–100
0
–4
–12
V DD = –10 V
–25 V
–50 V
8
16
Gate Charge
–8
–16
24
32
Qg (nc)
–20
40
1000
Switching Time t (ns)
V DD = –10 V
–25 V
–50 V
V GS (V)
0
Gate to Source Voltage
V DS (V)
0
–10
–20
–30
–40
–50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
Drain to Source Voltage
VGS = 0
f = 1 MHz
1000
5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Reverse Drain Current I DR (A)
6
Typical Capacitance vs.
Drain to Source Voltage
Switching Characteristics
V GS = –10 V, V DD = –30 V
Pw = 5 µs, duty < 1 %
300
t d(off)
100
tf
30
tr
t d(on)
10
3
1
–0.1 –0.2
–0.5 –1
Drain Current
–2
I D (A)
–5
–10
2SJ529(L),2SJ529(S)
Repetitive Avalanche Energy EAR (mJ)
–10
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
Pulse Test
–8
–6
–10 V
V GS = 0, 5 V
–4
–5 V
–2
0
–0.4
–0.8
–1.2
Source to Drain Voltage
–1.6
–2.0
20
I AP = –10 A
V DD = –25 V
duty < 0.1 %
Rg > 50 Ω
16
12
8
4
0
25
V SD (V)
50
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
V DS
Monitor
75
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
–15 V
50Ω
0
VDD
7
2SJ529(L),2SJ529(S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.2
0.1
0.05
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 6.25 °C/W, Tc = 25 °C
0.02
e
uls
1
0.03
0.0
PDM
P
ot
D=
h
1s
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
Pulse Width
10
PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
1
Vin
10%
D.U.T.
RL
90%
Vin
–10 V 50Ω
V DD
= –30 V
Vout
td(on)
8
90%
90%
10%
10%
tr
td(off)
tf
2SJ529(L),2SJ529(S)
9.5 ± 0.5
1.2 Max
16.2 ± 0.5
3.1 ± 0.5
2.29 ± 0.5
0.55 ± 0.1
L type
1.2 typ
2.29 ± 0.5
2.5 ± 0.5
4.7 ± 0.5
2.3 ± 0.5
0.55 ± 0.1
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
1.7 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
1.7 ± 0.5
Package Dimensions (Unit: mm)
S type
0 ~ 0.25
0.55 ± 0.1
Hitachi
EIAJ ( L type)
EIAJ ( S type)
JEDEC
DPAK–2
SC–63
SC–64
—
9
2SJ529(L),2SJ529(S)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
Fax: 415-583-4207
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
Copyright © Hitachi, Ltd., 1997. All rights reserved. Printed in Japan.
10