FUJI 2SK2397-01MR

2SK2397-01MR
N-channel MOS-FET
FAP-II Series
800V
> Features
-
2,3Ω
5A
50W
> Outline Drawing
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
VGS = ± 30V Guarantee
Avalanche Proof
> Applications
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage(RGS=20KΩ)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V DS
V DGR
ID
I D(puls)
V GS
PD
T ch
T stg
Rating
800
800
5
20
±30
50
150
-55 ~ +150
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Symbol
V (BR)DSS
V GS(th)
I DSS
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
Turn-Off-Time toff (ton=td(off)+tf)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
- Thermal Characteristics
Item
Thermal Resistance
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=800V
Tch=25°C
VGS=0V
Tch=125°C
VGS=±30V
VGS=0V
ID=2,5A
VGS=10V
ID=2,5A
VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V
ID=5A
VGS=10V
RGS=25 Ω
L=100µH
Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Min.
800
2,5
Test conditions
channel to air
channel to case
Min.
1,8
Typ.
4,0
10
0,2
10
1,7
3,5
800
120
60
25
100
130
70
Max.
5,0
500
1,0
100
2,3
1200
180
90
40
150
200
110
5
1,0
700
15,0
Typ.
1,5
Max.
62,5
2,5
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
Unit
°C/W
°C/W
2SK2397-01MR
N-channel MOS-FET
800V
2,3Ω
5A
FAP-II Series
50W
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. Tch
ID=f(VDS); 80µs pulse test; TC=25°C
ID [A]
↑
RDS(ON) [Ω]
1
VDS [V]
2
→
Tch [°C]
→
VGS [V]
→
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
RDS(on)=f(ID); 80µs pulse test; TC=25°C
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS(th)=f(Tch); ID=1mA; VDS=VGS
4
5
→
ID [A]
Typical Capacitances vs. VDS
VGS(th) [V]
↑
gfs [S]
↑
Tch [°C]
Typical Gate Charge Characteristic
IF=f(VSD); 80µs pulse test; VGS=0V
↑
VDS [V]
↑
7
8
→
Qg [nC]
Power Dissipation
Safe Operation Area
VDS [V]
↑
↑
ID=f(VDS): D=0,01, Tc=25°C
↑
VSD [V]
PD [W]
Tch [°C]
→
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
12
VDS [V]
→
↑
ID [A]
10
9
→
Zth(ch-c) [K/W]
PD=f(Tc)
→
Forward Characteristics of Reverse Diode
VGS=f(Qg); ID=5A; Tc=25°C
IF [A]
C=f(VDS); VGS=0V; f=1MHz
6
→
VGS [V]
ID [A]
↑
3
Typical Drain-Source On-State-Resistance vs. ID
↑
RDS(ON) [Ω]
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
↑
ID [A]
↑
C [nF]
Typical Transfer Characteristics
RDS(on) = f(Tch); ID=2,5A; VGS=10V
→
This specification is subject to change without notice!
t [s]
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