2SK2397-01MR N-channel MOS-FET FAP-II Series 800V > Features - 2,3Ω 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 800 800 5 20 ±30 50 150 -55 ~ +150 Unit V V A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) I R g C C C t t t t I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=800V Tch=25°C VGS=0V Tch=125°C VGS=±30V VGS=0V ID=2,5A VGS=10V ID=2,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=5A VGS=10V RGS=25 Ω L=100µH Tch=25°C IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 800 2,5 Test conditions channel to air channel to case Min. 1,8 Typ. 4,0 10 0,2 10 1,7 3,5 800 120 60 25 100 130 70 Max. 5,0 500 1,0 100 2,3 1200 180 90 40 150 200 110 5 1,0 700 15,0 Typ. 1,5 Max. 62,5 2,5 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A V ns µC Unit °C/W °C/W 2SK2397-01MR N-channel MOS-FET 800V 2,3Ω 5A FAP-II Series 50W > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. Tch ID=f(VDS); 80µs pulse test; TC=25°C ID [A] ↑ RDS(ON) [Ω] 1 VDS [V] 2 → Tch [°C] → VGS [V] → Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80µs pulse test; TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS 4 5 → ID [A] Typical Capacitances vs. VDS VGS(th) [V] ↑ gfs [S] ↑ Tch [°C] Typical Gate Charge Characteristic IF=f(VSD); 80µs pulse test; VGS=0V ↑ VDS [V] ↑ 7 8 → Qg [nC] Power Dissipation Safe Operation Area VDS [V] ↑ ↑ ID=f(VDS): D=0,01, Tc=25°C ↑ VSD [V] PD [W] Tch [°C] → Transient Thermal impedance Zthch=f(t) parameter:D=t/T 12 VDS [V] → ↑ ID [A] 10 9 → Zth(ch-c) [K/W] PD=f(Tc) → Forward Characteristics of Reverse Diode VGS=f(Qg); ID=5A; Tc=25°C IF [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] ↑ 3 Typical Drain-Source On-State-Resistance vs. ID ↑ RDS(ON) [Ω] ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ C [nF] Typical Transfer Characteristics RDS(on) = f(Tch); ID=2,5A; VGS=10V → This specification is subject to change without notice! t [s] →