Ordering number:ENN6437 N-Channel Silicon MOSFET 2SK2791 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SK2791] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2092B [2SK2791] 6.5 5.0 4 2.3 0.5 2.3 2 2.5 1 0.6 0.8 0.85 1.2 7.0 5.5 1.5 0.5 3 1.2 0 to 0.2 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-2493 No.6437–1/4 2SK2791 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 60 V ±20 V 4 A ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 16 A 1 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current IGSS VGS(off) Cutoff Voltage Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance Conditions ID=1mA, VGS=0 Ratings min typ max 60 V VDS=60V, VGS=0 100 µA ±10 µA 2.5 V 110 145 mΩ 195 mΩ VGS=±16V, VDS=0 VDS=10V, ID=1mA 1.0 3 Unit RDS(on)1 VDS=10V, ID=2A VGS=10A, ID=2A 5 S RDS(on)2 VGS=4A, ID=2A 140 VDS=20V, f=1MHz VDS=20V, f=1MHz 370 pF 120 pF 20 pF 13 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) VDS=20V, f=1MHz See specified Test Circuit tr See specified Test Circuit 30 ns td(off) See specified Test Circuit 100 ns tf See specified Test Circuit 60 IS=4A, VGS=0 0.9 Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD ns 1.2 V Switching Time Test Circuit VDD=30V VIN 10V 0V ID=2A RL=15Ω VIN D VOUT PW=10µs D.C.≤1% G P.G 2SK2791 50Ω S No.6437–2/4 2SK2791 ID -- VDS ID -- VGS 8 VDS=10V 1.0 4 3 2 0.5 1 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Drain-to-Source Voltage, VDS – V 2.0 2.5 3.0 3.5 4.0 IT01144 0.25 Static Drain-to-Source On-State Resistance, RDS (on) – Ω 0.05 0.20 0.15 0.10 0.05 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS – V 0 --60 20 3 2 C 5° --2 c= 7 T 5 °C 75 3 Forward Current, IF – A C 25° 5 0 20 80 100 120 140 160 IT01146 3 2 1.0 7 5 3 2 0.1 7 5 0.01 3 5 7 0.1 2 3 5 7 1.0 2 3 0 5 7 10 IT01147 Drain Current, ID – A 0.2 0.6 0.8 1.0 1.2 IT01148 Ciss, Coss, Crss -- VDS 1000 VDD=30V VGS=10V 0.4 Diode Forward Voltage, VSD – V f=1MHz 7 5 3 2 td(off) 100 7 5 tf 3 tr 2 td(on) 10 7 5 3 2 Ciss, Coss, Crss – pF 2 SW Time -- ID 1.0 0.1 60 VGS=0 3 2 2 0.1 0.01 40 IF -- VSD 10 7 5 VDS=10V 1.0 --20 Case Temperature, Tc – ˚C yfs -- ID 10 --40 IT01145 Tc=75 °C 25°C 0 =4V VGS 2A, = ID =10V , VGS A 2 I D= --25°C 0.10 Forward Transfer Admittance, | yfs | – S 1.5 RDS(on) -- Tc 0.30 0.15 1000 7 5 1.0 Gate-to-Source Voltage, VGS – V Tc=25°C ID=2A 0.20 7 0.5 IT01143 0.25 Static Drain-to-Source On-State Resistance, RDS (on) – Ω 0 1.6 RDS(on) -- VGS 0.30 Switching Time, SW Time – ns 25°C VGS=2.5V C 1.5 5 --25 ° 2.0 6 Tc= 75° C Drain Current, ID – A 10.0 V 2.5 7 4.0 V Drain Current, ID – A 3.0 3.0V 5 .0 8 .0 3.5 V V 6 .0 V 4.0 Ciss 3 2 Coss 100 7 5 Crss 3 2 2 3 5 7 1.0 2 Drain Current, ID – A SO 3 5 7 10 IT01149 10 0 5 10 15 20 25 Drain-to-Source Voltage, VDS – V 30 IT01150 No.6437–3/4 2SK2791 ASO 10 IDP=16A 0µ 1m s s 10 m D (T C op s c= er 25 ati °C on ) ID=4A 1.0 7 5 3 2 DC op era tio n( Operation in this area is limited by RDS(on). 0.1 7 5 3 2 Ta = 25 °C ) Tc=25°C Single pulse 0.01 0.01 2 3 1.0 0.8 0.6 0.4 0.2 0 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS – V 2 3 5 7 100 IT01151 0 20 40 60 80 100 120 140 Ambient Temperature, Ta – ˚C 160 IT01152 PD -- Tc 30 Allowable Power Dissipation, PD – W µs 10 10 7 5 3 2 PD -- Ta 1.2 Allowable Power Dissipation, PD – W Drain Current, ID – A 100 7 5 3 2 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C 140 160 IT01153 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6437–4/4