SHINDENGEN VX-2 Series Power MOSFET 2SK2798 (F6F35VX2) N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 350V 6A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter RATINGS Absolute Maximum Ratings iTc = 25j Item Symbol Conditions Storage Temperature T stg T ch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentiDCj I DP Continuous Drain CurrentiPeak) Continuous Source CurrentiDCj IS Total Power Dissipation PT I AS Single Pulse Avalanche Current T ch = 25 Vdis Terminals to case, AC 1 minute Dielectric Strength TOR i Recommended torque : 0.3N¥m j Mounting Torque Ratings -55`150 150 350 }30 6 18 6 30 6 2 0.5 Unit V A W A kV NEm VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current I GSS Gate-Source Leakage Current Forward Tran]conductance gfs Static Drain-Source On-]tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage Æjc The\mal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance C oss Turn-On Time ton toff Turn-Off Time 2SK2798 ( F6F35VX2 ) Conditions I D = 1mA, VGS = 0V VDS = 350V, VGS = 0V VGS = }30V, VDS = 0V I D = 3A, VDS = 10V I D = 3A, VGS = 10V I D = 1mA, VDS = 10V I S = 3A, VGS = 0V junction to case VDD = 200V, VGS = 10V, I D = 6A VDS = 10V, VGS = 0V, f = 1MHZ I D = 3A, RL = 50¶, VGS = 10V Min. 350 Typ. 1. 5 3. 8 0. 62 3. 0 2. 5 20 550 60 155 35 115 Max. 250 }0. 1 Unit V ÊA S 0. 83 ¶ 3. 5 V 1. 5 4. 17 /L nC pF 55 175 ns 2SK2798 Transfer Characteristics 12 Tc = −55°C Drain Current ID [A] 10 25°C 100°C 150°C 8 6 4 2 0 VDS = 15V pulse test TYP 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK2798 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 10 ID = 3A 1 0.1 0.01 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2798 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2798 Safe Operating Area 100 10 Drain Current ID [A] 100µs 200µs R DS(ON) limit 1 1ms 10ms 0.1 DC Tc = 25°C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 1000 0.01 0.1 1 10 0.001 10-4 Transient Thermal Impedance θjc(t) [°C/W] 10-3 10-2 2SK2798 Time t [s] 10-1 100 Transient Thermal Impedance 101 102 2SK2798 Capacitance 10000 Capacitance Ciss Coss Crss [pF] 1000 Ciss Coss 100 Crss 10 Tc=25°C TYP 1 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 2SK2798 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 2SK2798 Gate Charge Characteristics 20 200 15 VDD = 200V 100V 50V 150 VDS 10 VGS 100 5 50 ID = 6A 0 0 10 20 30 Gate Charge Qg [nC] 40 50 0 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] 250