FUJI 2SK3341-01

2SK3341-01
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
V DS
ID
ID(puls]
VGS
IAR *2
EAV *1
PD
Tch
Tstg
Rating
900
±10
±40
±30
10
648
310
+150
-55 to +150
*1 L=11.9mH, Vcc=90V
Unit
Equivalent circuit schematic
V
A
A
V
A
mJ
W
°C
Drain(D)
Gate(G)
Source(S)
<
*2 Tch=150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Symbol
V(BR)DSS
VGS(th)
Zero gate voltage drain current
IDSS
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
V SD
trr
Qrr
Turn-off time toff
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=900V
VGS=0V
VGS=±30V VDS=0V
ID=5A VGS=10V
Min.
Typ.
Max.
900
2.5
Tch=25°C
Tch=125°C
ID=5A VDS=25V
VDS =25V
VGS =0V
f=1MHz
VCC=600V ID=10A
VGS=10V
RGS=10 Ω
Vcc=450V
ID=10A
VGS=10V
L=11.9mH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
3.0
3.5
10
500
0.2
1.0
10
100
0.92
1.2
3.5
7
2200
3300
240
360
115
173
28
42
70
105
220
330
90
135
120
180
36
54
40
60
10
1.00
1.50
1.8
21.0
Units
V
V
µA
mA
nA
Ω
S
pF
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.403
50.0
Units
°C/W
°C/W
1
2SK3341-01
FUJI POWER MOSFET
Characteristics
Safe operating area
ID=f(VDS):Single Pulse,Tc=25°C
Allowable Power Dissipation
PD=f(Tc)
400
10
2
350
t=
1µ s
300
10µs
10
1
250
100µs
ID [A]
PD [W]
D.C.
200
1ms
150
10
0
10ms
100
t
D=
50
t
100ms
T
T
0
10
0
25
50
75
100
125
-1
150
10
1
10
2
10
3
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
Typical Output Characteristics
ID=f(VDS):80µs pulse test,Tch=25°C
22
20
18
10
20V
10V
16
7V
6.5V
14
ID[A]
ID [A]
6.0V
12
10
1
5.5V
8
6
5.0V
0.1
4
VGS=4.5V
2
0
0.01
0
2
4
6
8
10
12
14
16
18
20
22
24
0
26
1
2
3
VDS [V]
4
5
6
7
8
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
3.0
VGS=
4.5V
5.0V
5.5V
6.0V
2.5
10
RDS(on) [Ω ]
gfs [S]
2.0
1
6.5V
7V
1.5
10V
20V
1.0
0.5
0.1
0.0
0.1
1
10
ID [A]
0
5
10
15
20
25
ID [A]
2
2SK3341-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
5.0
4.0
4.5
3.5
4.0
3.0
max.
VGS(th) [V]
3.5
RDS(on) [Ω ]
2.5
2.0
3.0
typ.
2.5
2.0
1.5
max.
typ.
min.
1.5
1.0
1.0
0.5
0.5
0.0
0.0
-50
-25
0
25
50
75
100
125
-50
150
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A,Tch=25°C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
25
10
-7
20
10
-8
Vcc= 180V
15
Ciss
C [F]
VGS [V]
450V
720V
10
-9
10
Coss
10
-10
Crss
5
0
10
0
50
100
150
200
-11
250
10
-2
10
-1
10
Qg [C]
0
10
1
10
2
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
100
10
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω
3
td(off)
t [ns]
IF [A]
10
10
tf
2
1
tr
td(on)
0.1
0.00
0.25
0.50
0.75
VSD [V]
1.00
1.25
1.50
10
1
10
-1
10
0
10
1
ID [A]
3
2SK3341-01
FUJI POWER MOSFET
Transient Thermal impedance
Zth(ch-c)=f(t) parameter:D=t/T
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=90V,I(AV)<=10A
0
800
10
700
0.5
600
-1
Zth(ch-c) [K/W]
10
EAV [mJ]
500
400
0.2
0.1
0.05
0.02
0.01
-2
10
t
0
300
D=
t
T
T
200
-3
10
-5
10
100
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t [s]
0
0
25
50
75
100
125
150
starting Tch [°C]
4