2SK3702JS Ordering number : ENA0632 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3702JS General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Pb-free type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V ID 18 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 72 A 2.0 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 23 mJ Avalanche Current *2 IAV 18 A Tc=25°C Note : *1 VDD=20V, L=100µH, IAV=18A *2 L≤100µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : K3702 Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS(off) yfs VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=9A RDS(on)1 RDS(on)2 ID=9A, VGS=10V ID=9A, VGS=4V Ratings min typ Unit max 60 V 1 ±10 1.2 8 2.6 12 µA µA V S 42 55 mΩ 60 85 mΩ Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1306QA TI IM TC-00000378 No. A0632-1/5 2SK3702JS Continued from preceding page. Parameter Symbol Ratings Conditions min typ max Unit Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 775 Output Capacitance 125 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 105 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 65 ns See specified Test Circuit. 75 ns tf Qg See specified Test Circuit. 70 ns VDS=30V, VGS=10V, ID=18A 19 nC Gate-to-Source Charge Qgs nC Qgd VDS=30V, VGS=10V, ID=18A VDS=30V, VGS=10V, ID=18A 2.5 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=18A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge 4.1 nC 0.98 1.2 V Package Dimensions unit : mm (typ) 7525-002 10.0 4.5 2.8 3.6 16.0 7.2 3.5 3.2 1.6 14.0 1.2 0.75 1 2 3 0.7 2.4 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML(LS) Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=30V VIN L 10V 0V ≥50Ω ID=9A RL=3.33Ω VIN D 2SK3702JS VOUT PW=10µs D.C.≤1% 10V 0V 50Ω VDD G 2SK3702JS P.G 50Ω S No. A0632-2/5 2SK3702JS --25° C VDS=10V 10 V 6V Tc=25°C 25 4V 20 15 10 VGS=3V 25° C 15 10 5° C 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Drain-to-Source Voltage, VDS -- V 0 100 80 Tc= 75°C 25°C --25°C 40 20 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 1.0 0.5 6 IT06198 9A , I D= = 4V V GS =10V , VGS A 9 I D= 60 40 20 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C Forward Transfer Admittance, yfs -- S Cutoff Voltage, VGS(off) -- V 1.5 0 --50 80 150 IT06200 yfs -- ID 5 2.0 5 100 IT06199 VDS=10V ID=1mA 4 120 0 --50 10 VGS(off) -- Tc 2.5 3 RDS(on) -- Tc 140 0 2 2 Gate-to-Source Voltage, VGS -- V ID=9A 120 60 1 IT06197 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 5.0 RDS(on) -- VGS 140 VDS=10V 3 2 10 = Tc 7 C 25° 5°C --2 C 7 5° 5 3 2 1.0 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C 2 150 3 5 7 2 1.0 3 5 7 VDD=30V VGS=10V 7 Switching Time, SW Time -- ns 5 Tc= 75°C 25°C --25°C 1.0 7 5 3 2 0.1 7 5 3 2 3 IT06202 SW Time -- ID 1000 VGS=0V 10 7 5 3 2 2 10 Drain Current, ID -- A IT06201 IS -- VSD 100 7 5 3 2 Source Current, IS -- A Tc 0 --2 5 =7 5 20 °C 25 ° C Drain Current, ID -- A 30 Tc= 25 8V 35 Drain Current, ID -- A ID -- VGS 30 75 ° C ID -- VDS 40 3 2 td(off) 100 7 tf 5 3 tr 2 td(on) 10 0.01 0 0.3 0.6 0.9 1.2 Diode Forward Voltage, VSD -- V 1.5 IT06203 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT06204 No. A0632-3/5 2SK3702JS Ciss, Coss, Crss -- VDS 3 f=1MHz 1000 Ciss 7 5 3 2 Coss Crss 100 8 7 6 5 4 3 2 1 7 0 5 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 0 0µ ID=18A 1m 10 7 5 DC 3 2 Operation in this area is limited by RDS(on). 1.0 7 5 3 2 10 µs s s 10 10 Allowable Power Dissipation, PD -- W PW<10µs 10 3 2 0m ms s op era tio n Tc=25°C Single pulse 0.1 0.1 2 3 10 15 20 Total Gate Charge, Qg -- nC IT06206 PD -- Ta 2.5 IDP=72A 100 7 5 5 IT06205 ASO 2 Drain Current, ID -- A VDS=30V ID=18A 9 Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 2 2.0 1.5 1.0 0.5 0 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 100 IT06207 0 20 40 60 Avalanche Energy derating factor -- % 15 10 5 0 100 120 140 160 IT06208 EAS -- Ta 120 20 80 Ambient Tamperature, Ta -- °C PD -- Tc 25 Allowable Power Dissipation, PD -- W VGS -- Qg 10 100 80 60 40 20 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT06209 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0632-4/5 2SK3702JS Note on usage : Since the 2SK3702JS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No. A0632-5/5