MCH6602 Ordering number : EN6445B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6602 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±10 V ID 0.35 A 1.4 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD PW≤10µs, duty cycle≤1% 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Mounted on a ceramic board (900mm2✕0.8mm) 1unit Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V Ratings min typ Unit max 30 V 1 µA ±10 µA Forward Transfer Admittance VGS(off) yfs VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=80mA RDS(on)1 RDS(on)2 ID=80mA, VGS=4V ID=40mA, VGS=2.5V 2.9 3.7 Static Drain-to-Source On-State Resistance 3.7 5.2 Ω ID=10mA, VGS=1.5V VDS=10V, f=1MHz 6.4 12.8 Ω Input Capacitance RDS(on)3 Ciss Cutoff Voltage Output Capacitance Coss Reverse Transfer Capacitance Crss Marking : FB VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 0.15 1.3 0.22 V S Ω 7.0 pF 5.9 pF 2.3 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12407 TI IM TC-00000415 / 70306 / 42806PE MS IM TB-00002288 / 30300 TS (KOTO) TA-2509 No.6445-1/5 MCH6602 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns Rise Time tr td(off) See specified Test Circuit. 65 ns See specified Test Circuit. 155 ns tf See specified Test Circuit. 120 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg nC Qgs VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA 1.58 Gate-to-Source Charge 0.26 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 Diode Forward Voltage VSD IS=150mA, VGS=0V 0.87 Package Dimensions nC 1.2 V Electrical Connection 2.0 6 5 5 4 1 2 3 4 0 to 0.02 0.25 1 2 3 0.65 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 0.3 0.85 0.07 6 0.15 2.1 1.6 0.25 unit : mm 7022A-006 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 SANYO : MCPH6 Switching Time Test Circuit 4V 0V VDD=15V VIN PW=10µs D.C.≤1% ID=80mA RL=187.5Ω VIN VOUT D G P.G 50Ω MCH6602 S No.6445-2/5 MCH6602 ID -- VGS 0.30 0.08 VGS=1.5V 0.06 0.04 °C °C 0.20 75 V 0.10 Ta= 0.25 Drain Current, ID -- A 3 .0 4.0V 0.12 V 2.0 V 3.5V 6.0 Drain Current, ID -- A 0.14 --25 2. 5V VDS=10V 25 °C ID -- VDS 0.16 0.15 0.10 0.05 0.02 0 0 0 0.1 0.2 0.3 0.5 0.4 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 1.0 1.0 1.5 2.5 2.0 VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 8 7 6 80mA 5 ID=40mA 4 3 2 1 2 3 4 5 7 6 8 9 Gate-to-Source Voltage, VGS -- V 10 25°C --25°C 2 2 3 5 7 2 0.1 3 Drain Current, ID -- A 2. S= 5V 3 2 1 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT00035 5 7 2 0.1 3 5 IT00032 RDS(on) -- ID VGS=1.5V 5 3 2 10 Ta=75°C 7 5 --25°C 3 25°C 2 2 3 5 7 0.01 2 3 5 IT00034 yfs -- ID 1.0 4.0V 40m S= I D= VG , A 80m I D= 4 3 Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω G A, V 2 IT00033 6 5 2 1.0 0.001 5 RDS(on) -- Ta 7 --25°C 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=75°C 1.0 0.01 25°C 3 100 7 3 Ta=75°C Drain Current, ID -- A VGS=2.5V 5 5 IT00031 RDS(on) -- ID 10 7 1.0 0.01 0 1 IT00030 RDS(on) -- ID 10 Ta=25°C 0 3.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 10 0.5 IT00029 VDS=10V 7 5 25°C 3 5°C 2 Ta= -- 2 75°C 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 5 IT00036 No.6445-3/5 MCH6602 IS -- VSD 1.0 7 Switching Time, SW Time -- ns 75 °C 25 °C --2 5°C 2 Ta = Source Current, IS -- A 3 7 5 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 3 td (off) tf 2 100 7 tr 5 3 td(on) 2 Gate-to-Source Voltage, VGS -- V 3 2 Ciss Coss 5 3 Crss 2 5 7 2 0.1 IT00038 VGS -- Qg VDS=10V ID=150mA 9 7 3 Drain Current, ID -- A 10 5 10 2 IT00037 f=1MHz 7 Ciss, Coss, Crss -- pF 5 10 0.01 1.2 Ciss, Coss, Crss -- VDS 100 VDD=15V VGS=4V 7 5 0.1 SW Time -- ID 1000 VGS=0V 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 18 Drain-to-Source Voltage, VDS -- V IDP=1.4A Drain Current, ID -- A 1m 7 0.1 7 5 3 2 0.01 s 10m ID=0.35A s 100 2 ms DC ope rat ion Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.0 2 3 5 7 0.4 0.6 10 2 Drain-to-Source Voltage, VDS -- V 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W PW≤10µs 3 0.2 1.6 IT00040 PD -- Ta 1.0 1.0 5 0 IT00039 ASO 3 2 20 0.8 M ou nte do na 0.6 ce ram ic bo ard 0.4 (9 00 mm 2 ✕0 .8 mm 0.2 )1 un it 0 3 5 IT01117 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01118 No.6445-4/5 MCH6602 Note on usage : Since the MCH6602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice. PS No.6445-5/5