PANASONIC 2SK665

Silicon MOS FETs (Small Signal)
2SK665
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
■ Features
0.425
1.25±0.1
0.425
0.3–0
0.65
1.3±0.1
1
0.65
2.0±0.2
+0.1
● High-speed switching
● Small drive current owing to high input inpedance
● High electrostatic breakdown voltage
3
Unit
V
V
mA
mA
mW
°C
°C
+0.1
0 to 0.1
Ratings
20
8
100
200
150
150
−55 to +150
Symbol
VDS
VGSO
ID
IDP
PD
Tch
Tstg
0.7±0.1
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
0.9±0.1
■ Absolute Maximum Ratings (Ta = 25°C)
0.15–0.05
0.2
2
1: Gate
2: Source
3: Drain
0.2±0.1
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 3O
Internal Connection
D
R1
G
R2
S
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Turn-on time
Turn-off time
Resistance ratio R1/R2 = 1/50
Vout
VGS = 5V
50Ω
*2
Conditions
VDS = 10V, VGS = 0
VGS = 8V, VDS = 0
ID = 100µA, VGS = 0
ID = 100µA, VDS = VGS
ID = 20mA, VGS = 5V
ID = 20mA, VDS = 5V, f = 1kHz
VDD = 5V, VGS = 1V, RL = 200Ω
VDD = 5V, VGS = 5V, RL = 200Ω
min
40
20
1.5
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
ton, toff measurement circuit
*3
typ
max
10
80
3.5
50
20
4.5
100
200Ω
100µF
*1
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)*3
| Yfs |
VOH
VSL
R1 + R2*1
ton*2
toff*2
1
200
1
1
Unit
µA
µA
V
V
Ω
mS
V
V
kΩ
µs
µs
Pulse measurement
90%
10%
Vin
VDD = 5V
Vout
10%
90%
ton
toff
1
Silicon MOS FETs (Small Signal)
2SK665
PD  Ta
ID  VDS
120
120
100
160
120
80
100
VGS=6.0V
80
5.5V
5.0V
60
4.5V
40
40
20
0
0
4.0V
3.5V
Ta=–25˚C
25˚C
60
75˚C
40
20
40
60
80 100 120 140 160
0
0
Input capacitance (Common source),
Output capacitance (Common source) Ciss,Coss (pF)
30
20
10
0
6
8
10
Gate to source voltage VGS (V)
VIN  IO
1000
VO=1V
Ta=25˚C
300
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
10
8
10
0
2
30
Output current IO (mA)
100
Ciss
8
6
4
Coss
2
0
0.1
0.3
1
3
10
6
8
10
RDS(on)  VGS
VGS=0
f=1MHz
Ta=25˚C
10
4
Gate to source voltage VGS (V)
Ciss, Coss  VDS
40
4
6
12
VDS=5V
Ta=25˚C
2
4
Drain to source voltage VDS (V)
| Yfs |  VGS
0
2
30
100
Drain to source voltage VDS (V)
Drain to source ON-resistance RDS(on) (Ω)
20
50
Forward transfer admittance |Yfs| (mS)
80
3.0V
Ambient temperature Ta (˚C)
Input voltage VIN (V)
Drain current ID (mA)
200
0
2
VDS=5V
Ta=25˚C
Drain current ID (mA)
Allowable power dissipation PD (mW)
240
ID  VGS
120
ID=20mA
100
80
60
Ta=75˚C
40
25˚C
–25˚C
20
0
0
2
4
6
8
10
Gate to source voltage VGS (V)