ETC PS2501-1L

DATA SHEET
PHOTOCOUPLER
PS2501-1,-2,-4, PS2501L-1,-2,-4
HIGH ISOLATION VOLTAGE
SINGLE TRANSISTOR TYPE
MULTI PHOTOCOUPLER SERIES
−NEPOC
TM
Series−
DESCRIPTION
The PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon phototransistor.
The PS2501-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, -2, -4 are lead bending type
(Gull-wing) for surface mount.
FEATURES
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High collector to emitter voltage (VCEO = 80 V)
• High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)
• Ordering number of tape product: PS2501L-1-E3, E4, F3, F4, PS2501L-2-E3, E4
• Safety standards
• UL approved: File No. E72422 (S)
APPLICATIONS
• Power supply
• Telephone/FAX.
• FA/OA equipment
• Programmable logic controller
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10025EJ8V0DS00 (8th edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1988, 2001
PS2501-1,-2,-4,PS2501L-1,-2,-4
PACKAGE DIMENSIONS (UNIT : mm)
DIP Type (New package)
PS2501-1
4
1
2
3
4 5 6 7 8
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
7.62
0 to 15˚ +0.1
0.25 –0.05
1.25±0.15
16 15 14 13 12 11 10 9
6.5 +0.7
–0.5
2
7.62
3.2±0.4 4.15±0.4
6.5 +0.7
–0.5
1. Anode
2. Cathode
3. Emitter
4. Collector
1
TOP VIEW
19.8±0.5
3
3.5±0.3
3.2±0.4 4.15±0.4
PS2501-4
TOP VIEW
3.5±0.3
4.6±0.35
0 to 15˚ +0.1
0.25 –0.05
0.50±0.10
1.25±0.15
0.50±0.10
0.25 M
0.25 M
2.54
2.54
Caution New package 1-ch, 4-ch only
DIP Type
PS2501-1
9.7±0.5
3
2
7.62
0 to 15˚ +0.1
0.25 –0.05
1.25±0.15
8
1
0.50±0.10
1.25±0.15
0.50±0.10
0.25 M
TOP VIEW
7
6
5
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
6.5 +0.7
–0.5
1
3.3±0.5 4.15±0.4
6.5 +0.7
–0.5
1. Anode
2. Cathode
3. Emitter
4. Collector
3.5±0.3
3.3±0.5 4.15±0.4
PS2501-2
TOP VIEW
4
2
3 4
7.62
3.5±0.3
4.6±0.5
0 to 15˚ +0.1
0.25 –0.05
0.25 M
2.54
2.54
PS2501-4
TOP VIEW
16 15 14 13 12 11 10 9
6.5 +0.7
–0.5
19.8±0.5
1
2
3.5±0.3
3.3±0.5 4.15±0.4
7.62
0.50±0.10
1.25±0.15
2.54
2
0 to 15˚ +0.1
0.25 –0.05
0.25 M
Data Sheet P10025EJ8V0DS
3
4 5 6 7 8
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
PS2501-1,-2,-4,PS2501L-1,-2,-4
Lead Bending Type (New package)
PS2501L-1
PS2501L-4
TOP VIEW
16 15 14 13 12 11 10 9
TOP VIEW
3
19.8±0.5
3.5±0.3
0.1 +0.1
–0.05
3.5±0.3
0.9±0.25
9.60±0.4
1.25±0.15
0.25 M
2.54
1
0.9±0.25
9.60±0.4
1.25±0.15
0.25 M
0.15
2.54
2 3 4 5 6 7 8
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
0.1 +0.1
–0.05
2
0.25 +0.1
–0.05
1
6.5 +0.7
–0.5
6.5 +0.7
–0.5
1. Anode
2. Cathode
3. Emitter
4. Collector
0.25 +0.1
–0.05
4
4.6±0.35
0.15
Caution New package 1-ch, 4-ch only
Lead Bending Type
PS2501L-2
PS2501L-1
TOP VIEW
0.9±0.25
9.60±0.4
0.25 M
1
1.25±0.15
0.25 M
6
5
2
3
4
0.15
2.54
0.9±0.25
9.60±0.4
0.15
PS2501L-4
TOP VIEW
16 15 14 13 12 11 10 9
6.5 +0.7
–0.5
19.8±0.5
1.25±0.15
0.25 M
2.54
0.15
2 3 4 5 6 7 8
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
0.1 +0.1
–0.05
0.25 +0.1
–0.05
1
3.5±0.3
2.54
7
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
3.5±0.3
0.1 +0.1
–0.05
3.5±0.3
0.25 +0.1
–0.05
2
1.25±0.15
8
6.5 +0.7
–0.5
6.5 +0.7
–0.5
1. Anode
2. Cathode
3. Emitter
4. Collector
1
TOP VIEW
9.7±0.5
3
0.1 +0.1
–0.05
4
0.25 +0.1
–0.05
4.6±0.5
0.9±0.25
9.60±0.4
Data Sheet P10025EJ8V0DS
3
PS2501-1,-2,-4,PS2501L-1,-2,-4
MARKING EXAMPLE
PS2501-1
PS2501-2, -4
No. 1 pin
Mark
No. 1 pin
Mark
2501
MD003
M D
Assembly Lot
0 03
M D
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
Standard PKG
New PKG
Made in Japan Made in Taiwan
D
F
0 03
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
Standard PKG
New PKG
E
*1 PS2501-4 only
4
Data Sheet P10025EJ8V0DS
Country Assembled
Type Number
Assembly Lot
PS2501-2
MD003
Made in Japan Made in Taiwan
D
*1
E
F
PS2501-1,-2,-4,PS2501L-1,-2,-4
ORDERING INFORMATION
Part Number
PS2501-1
Package
4-pin DIP
*1
Application Part Number
Packing Style
Magazine case 100 pcs
PS2501-1
PS2501L
PS2501L-1-E3
Embossed Tape 1 000 pcs/reel
PS2501L-1-E4
PS2501L-1-F3
Embossed Tape 2 000 pcs/reel
PS2501L-1-F4
PS2501-2
8-pin DIP
Magazine case 45 pcs
PS2501-2
PS2501L-2
PS2501L-2-E3
Embossed Tape 1 000 pcs/reel
PS2501L-2-E4
PS2501-4
16-pin DIP
Magazine case 20 pcs
PS2501-4
PS2501L-4
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Ratings
Parameter
Diode
Symbol
PS2501-2,-4
PS2501L-2,-4
Unit
Reverse Voltage
VR
6
V
Forward Current (DC)
IF
80
mA
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
PS2501-1,
PS2501L-1
*1
∆PD/°C
1.5
1.2
mW/°C
PD
150
120
mW/ch
IFP
1
A
Collector to Emitter Voltage
VCEO
80
V
Emitter to Collector Voltage
VECO
7
V
IC
50
mA/ch
Collector Current
Power Dissipation Derating
Power Dissipation
*2
∆PC/°C
1.5
1.2
mW/°C
PC
150
120
mW/ch
Isolation Voltage
BV
5 000
Vr.m.s.
Operating Ambient Temperature
TA
−55 to +100
°C
Storage Temperature
Tstg
−55 to +150
°C
*1 PW = 100 µs, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet P10025EJ8V0DS
5
PS2501-1,-2,-4,PS2501L-1,-2,-4
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Diode
Symbol
Conditions
Forward Voltage
VF
IF = 10 mA
Reverse Current
IR
VR = 5 V
Terminal Capacitance
Ct
V = 0 V, f = 1.0 MHz
Transistor
Collector to Emitter Dark
Current
ICEO
VCE = 80 V, IF = 0 mA
Coupled
Current Transfer Ratio
*1
(IC/IF)
CTR
IF = 5 mA, VCE = 5 V
Collector Saturation
Voltage
VCE(sat)
IF = 10 mA, IC = 2 mA
Isolation Resistance
RI-O
VI-O = 1.0 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1.0 MHz
*2
Rise Time
tr
*2
tf
Fall Time
VCC = 10 V, IC = 2 mA, RL = 100 Ω
300 to 600 (%)
L* :
200 to 400 (%)
M* :
80 to 240 (%)
D* :
100 to 300 (%)
H* :
80 to 160 (%)
W* :
130 to 260 (%)
Q* :
100 to 200 (%)
N :
80 to 600 (%)
*2 Test circuit for switching time
Pulse Input
IF
VCC
PW = 100 µs
Duty Cycle = 1/10
50 Ω
6
TYP.
MAX.
Unit
1.17
1.4
V
5
µA
50
80
300
VOUT
RL = 100 Ω
Data Sheet P10025EJ8V0DS
pF
100
nA
600
%
0.3
V
Ω
11
10
0.5
pF
3
µs
5
*1 CTR rank ( * : only PS2501-1, PS2501L-1)
K* :
MIN.
PS2501-1,-2,-4,PS2501L-1,-2,-4
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
Diode Power Dissipation PD (mW)
150
PS2501-1
PS2501L-1
100
PS2501-2
PS2501L-2
PS2501-4
PS2501L-4
1.5 mW/˚C
50
1.2 mW/˚C
0
25
50
75
100
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
125
150
PS2501-2
PS2501L-2
PS2501-4
PS2501L-4
1.2 mW/˚C
0
150
25
75
50
100
125
150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
70
50
TA = +100 ˚C
+60 ˚C
+25 ˚C
60
Collector Current IC (mA)
Forward Current IF (mA)
1.5 mW/˚C
50
Ambient Temperature TA (˚C)
10
5
0 ˚C
–25 ˚C
–55 ˚C
1
0.5
50
40
50
30
mA
20
mA A
m
10
20
IF = 5 mA
10
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
1.5
2
4
6
8
10
Forward Voltage VF (V)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
40
50 mA
20 mA
10 mA
10 000
VCE = 80 V
40 V
24 V
10 V
5V
1 000
Collector Current IC (mA)
Collector to Emitter Dark Current ICEO (nA)
PS2501-1
PS2501L-1
100
100
10
1
– 50
–25
0
25
50
75
100
10
5 mA
5
2 mA
IF = 1 mA
1
0.5
0.1
0
Ambient Temperature TA (˚C)
0.2
0.4
0.6
0.8
1.0
Collector Saturation Voltage VCE(sat) (V)
Data Sheet P10025EJ8V0DS
7
PS2501-1,-2,-4,PS2501L-1,-2,-4
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
1.0,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
0.8,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
0.6
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1.2
0.4
Normalized to 1.0
at TA = 25 ˚C,
IF = 5 mA, VCE = 5 V
0.2
0
–50
–25
0
25
50
75
450
VCE = 5 V
Current Transfer Ratio CTR (%)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
400
350
300
250
200
150
100
50
0
100
Sample A
B
C
D
0.05 0.1
1
5
10
50
Forward Current IF (mA)
Ambient Temperature TA (˚C)
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
50
1 000
IC = 2 mA,
VCC = 10 V,
CTR = 290 %
tf
IF = 5 mA,
VCC = 5 V,
CTR = 290 %
tf
tr
10
Switching Time t ( µ s)
Switching Time t ( µ s)
0.5
td
ts
1
ts
100
10
tr
0.1
10
50 100
1
100
5 k 10 k
500 1 k
Load Resistance RL (Ω)
50 k 100 k
LONG TERM CTR DEGRADATION
–5
100 Ω
–15
RL = 1 kΩ
IF = 5 mA
1.0
CTR (Relative Value)
Normalized Gain GV
5 k 10 k
1.2
IF = 5 mA,
VCE = 5 V
–10
500 1 k
Load Resistance RL (Ω)
FREQUENCY RESPONSE
0
td
0.8
TA = 25 ˚C
0.6
TA = 60 ˚C
0.4
0.2
–20
300 Ω
0.5 1
2
5
10 20
50 100 200 500
Frequency f (kHz)
Remark
8
0
102
103
Time (Hr)
The graphs indicate nominal characteristics.
Data Sheet P10025EJ8V0DS
104
105
PS2501-1,-2,-4,PS2501L-1,-2,-4
TAPING SPECIFICATIONS (UNIT : mm)
1.55±0.1
4.5 MAX.
10.3±0.1
7.5±0.1
φ 1.5 +0.1
–0
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
4.0±0.1
5.3±0.1
8.0±0.1
0.4
Tape Direction
PS2501L-1-E3
PS2501L-1-E4
Outline and Dimensions (Reel)
1.6
R 1.0
φ 21.0±0.8
φ 80.0±5.0
φ 250
2.0±0.5
φ 13.0±0.5
16.4 +2.0
–0.0
Packing: 1 000 pcs/reel
Data Sheet P10025EJ8V0DS
9
PS2501-1,-2,-4,PS2501L-1,-2,-4
1.55±0.1
4.5 MAX.
10.3±0.1
7.5±0.1
φ 1.5 +0.1
–0
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
4.0±0.1
5.3±0.1
8.0±0.1
0.4
Tape Direction
PS2501L-1-F3
PS2501L-1-F4
Outline and Dimensions (Reel)
1.5
R 1.0
φ 21.0±0.8
φ 80.0±5.0
φ 330
2.0±0.5
φ 13.0±0.5
16.4 +2.0
–0.0
Packing: 2 000 pcs/reel
10
Data Sheet P10025EJ8V0DS
PS2501-1,-2,-4,PS2501L-1,-2,-4
4.5 MAX.
10.3±0.1
7.5±0.1
1.5 +0.1
–0
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
4.0±0.1
10.4±0.1
1.55±0.1
12.0±0.1
0.3
Tape Direction
PS2501L-2-E4
PS2501L-2-E3
Outline and Dimensions (Reel)
1.5
R 1.0
φ 21.0±0.8
φ 80.0±5.0
φ 330
2.0±0.5
φ 13.0±0.5
16.4 +2.0
–0.0
Packing: 1 000 pcs/reel
Data Sheet P10025EJ8V0DS
11
PS2501-1,-2,-4,PS2501L-1,-2,-4
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
235 °C or below (package surface temperature)
• Time of temperature higher than 210 °C
30 seconds or less
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
Package Surface Temperature T (˚C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
235 ˚C (peak temperature)
210 ˚C
to 30 s
100 to 160 ˚C
60 to 120 s
(preheating)
Time (s)
(2) Dip soldering
• Temperature
260 °C or below (molten solder temperature)
• Time
10 seconds or less
• Number of times
One (Allowed to be dipped in solder including plastic mold portion.)
• Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
(3) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
corrector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings.
12
Data Sheet P10025EJ8V0DS
PS2501-1,-2,-4,PS2501L-1,-2,-4
[MEMO]
Data Sheet P10025EJ8V0DS
13
PS2501-1,-2,-4,PS2501L-1,-2,-4
[MEMO]
14
Data Sheet P10025EJ8V0DS
PS2501-1,-2,-4,PS2501L-1,-2,-4
[MEMO]
Data Sheet P10025EJ8V0DS
15
PS2501-1,-2,-4,PS2501L-1,-2,-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
• The information in this document is current as of March, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4