PT9733 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9733 is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° A B C E • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold™ Metalization System E ØC B D H I J MAXIMUM RATINGS F IC 8.0 A VCES 60 V VEBO PDISS TJ G #8-32 UNC-2A E MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 4.0 V B .980 / 24.89 C .370 / 9.40 .385 / 9.78 85 W @ TC = 25 °C D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.1 °C/W CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL .175 / 4.45 .750 / 19.05 J MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 25 mA 35 V BVCES IC = 50 mA 60 V BVEBO IE = 8.0 mA 4.0 V ICES VCE = 25 V hFE VCE = 10 V Cob VCB = 28 V PG ηC VSWR VCE = 28 V PIN = 10 W IC = 500 mA 2.0 mA 150 --- 90 Pf 6.0 6.0 60 60 dB % --- 20 f = 1.0 MHz POUT =50 W f = 175 MHz ∞ A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1