INFINEON PTF180601E

PTF180601
LDMOS Field Effect Transistor
60 W, DCS/PCS Band
1805–1880 MHz, 1930–1990 MHz
Description
Features
The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for
EDGE applications in the DCS/PCS Band. Full gold metallization ensures
excellent device lifetime and reliability.
•
Broadband internal matching
•
Typical two-tone performance
- Average output power = 30 W
- Gain = 16.5 dB
- Efficiency = 35%
•
Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 15.5 dB
- Efficiency = 47%
•
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
•
Excellent thermal stability
•
Low HCI Drift
•
Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
EDGE EVM Performance
EVM & Efficiency vs. Power Output
40
3
30
Efficiency
2
20
1
Efficiency (%)
EVM RMS (Average %)..
VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz
4
10
PTF180601C
Package 21248
EVM
0
0
35
37
39
41
43
45
PTF180601E
Package 30248
Output Power (dBm)
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 800 mA, P OUT = 22 W, f = 1989.8 MHz
Characteristic
Symbol
Error Vector Magnitude
Min
Typ
Max
Units
EVM (RMS)
—
1.7
—
%
Modulation Spectrum @ 400 KHz
ACPR
—
–60
—
dBc
Modulation Spectrum @ 600 KHz
ACPR
—
–73
—
dBc
Gps
—
16.5
—
dB
ηD
—
32
—
%
Symbol
Min
Typ
Max
Units
Gps
15
16.5
—
dB
Drain Efficiency
ηD
30
35
—
%
Intermodulation Distortion
IMD
—
–30
–28
dBc
Gain
Drain Efficiency
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 800 mA, POUT = 60 W PEP, f = 1930 MHz, Tone Spacing = 1 MHz
Characteristic
Gain
Data Sheet
1
2004-05-03
PTF180601
Electrical Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain–Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
On–State Resistance
VGS = 10 V, V DS = 0.1 V
RDS(on)
—
0.135
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 800 mA
VGS
2.5
3.2
4.0
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
0.01
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
V
Gate–Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
PD
159
W
0.91
W/°C
180
W
1.03
W/°C
TSTG
–40 to +150
°C
RθJC
1.1
°C/W
0.97
°C/W
Total Device Dissipation
PTF180601C
Above 25°C derate by
Total Device Dissipation
PTF180601E
PD
Above 25°C derate by
Storage Temperature Range
Thermal Resistance
(TCASE = 70°C, 60 W CW)
Data Sheet
PTF180601C
PTF180601E
2
2004-05-03
PTF180601
VDD = 26 V, IDQ = 0.8 A, f = 1989.8 MHz
VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz
5
50
4
40
Efficiency
30
2
20
1
10
EVM
0
0
35
37
39
41
43
50
-60
40
400 KHz
-65
Efficiency
-70
10
600 KHz
-80
45
0
35
37
39
41
43
45
Output Power (dBm)
EVM & Modulation Spectrum Performance
Gain & Efficiency vs. Output Power
f = 1989.8 MHz, Output Power = 22 W
VDD = 28 V, IDQ = 0.8 A, f = 1990 MHz
18
-40
6
-50
-60
600 KHz
5
4
-70
-80
3
-90
EVM
2
-100
1
-110
1.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
60
Gain
16
50
15
40
30
14
Efficiency
13
20
12
10
11
0
30
35
40
45
50
Output Power (dBm)
Quiscent Drain Current (A)
Data Sheet
70
17
Gain (dB)
400 KHz
Modulation Spectrum (dB)
8
7
20
-75
Output Power (dBm)
EVM RMS (Average %) .
30
Efficiency (%)
3
-55
Efficiency (%)
EDGE Modulation Spectrum Performance
Mod Spectrum vs. Power Output
Modulation Spectrum (dB)
EDGE EVM Performance
at 26 V
Efficiency (%)
EVM RMS (Average %)..
Typical Performance (measurements taken in production test fixture, at TCASE = 25°C unless otherwise indicated)
3
2004-05-03
PTF180601
Typical Performance (cont.)
Power Gain vs. Output Power
Output Power, Gain & Efficiency (at P-1dB)
vs. Frequency
VDD = 28 V, f = 1990 MHz
VDD = 28 V, IDQ = 0.8 A
19
Output Pow er
17
45
Gain
15
1900
1920
40
1940
1960
1980
2000
17
IDQ = 800 mA
IDQ = 600 mA
16
15
35
2020
0
1
Frequency (MHz)
Broadband Test Fixture Performance
VDD = 28 V, IDQ = 0.8 A, POUT = 60 W
VDD = 28 V, IDQ = 0.8 A, POUT = 10 W
Gain (dB), Return Loss (dB)
5
50
0
Efficiency
-5
Efficiency (%)
Gain (dB), Return Loss (dB)
Gain
60
40
-10
-15
Return Loss
-20
1900
1930
1960
1990
30
20
70
10
30
2020
15
27
Gain
10
24
5
21
0
18
Efficiency
-5
15
12
-10
9
-15
Return Loss
-20
1900
Frequency (MHz)
Data Sheet
100
Broadband Test Fixture Performance
20
15
10
Output Power (W)
Efficiency (%)
16
Power Gain (dB)
50
Output Power (dBm),
Efficiency (%)
IDQ = 1.0 A
Efficiency
18
Gain (dB)
18
55
1930
1960
1990
6
2020
Frequency (MHz)
4
2004-05-03
PTF180601
Typical Performance (cont.)
Output Power vs. Supply Voltage
Intermodulation Distortion vs. Output Power
IDQ = 0.8 A, f = 1990 MHz
VDD = 28 V, IDQ = 0.8 A, F1 = 1990 MHz, F2 = 1991 MHz
-20
-30
49
48
IMD (dBc)
Output Power (dBm)
50
47
3rd Order
-40
-50
46
-60
45
-70
44
-80
5th Order
7th Order
22
24
26
28
30
32
32
34
36
38
40
42
44
46
48
Output Power, PEP (dBm)
Supply Voltage (V)
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
Normalized Bias Voltage
1.03
1.02
0.40
1.53
2.67
3.80
4.93
6.07
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
100
Case Temperature (°C)
Data Sheet
5
2004-05-03
PTF180601
Broadband Circuit Impedance Data
R
jX
R
jX
1900
9.9
0.55
3.7
4.1
1920
10.3
0.56
3.6
4.3
1930
10.3
0.50
3.5
4.3
1960
10.7
0.23
3.2
4.5
1990
11.0
–0.15
3.0
4.7
2000
11.1
–0.30
2.9
4.8
2020
11.3
–0.58
2.7
5.0
1900 MHz
Z Source
0.3
MHz
1900 MHz
0.2
Z Load Ω
0.1
Z Source Ω
2020 MHz
0 .0
Frequency
Z Load
ARD LOA D HS T OW
E NGT
S
0 .1
G
S T OW
A RD
GEN
E RA
TO
Z Load
0. 2
Z Source
Z0 = 50 Ω
R -->
D
2020 MHz
0.1
Reference Circuit
VDD
VGG
L2
R1
220 V
+C1
10µF
C2
0.1µF
R2
220V
l6
D.U.T.
C5
10pF
l1
C8
0.1µF
L1
2.7µH
l4
RF_IN
+C7
10µF
C6
10pF
C3
10pF
l2
l3
C10
0.4pF
C9
10pF
l5
C4
1.1pF
l7
l8
l9
l10
RF_OUT
C11
1.3pF
Reference Circuit Schematic for 1990 MHz
Data Sheet
6
2004-05-03
PTF180601
Reference Circuit (cont.)
C1
VGG
R2
C2
R1
L3
GND
+
C3
C6
R3
VDD
+
C7
C8
L2
C10
RF_IN
C9
C5
C4
RF_OUT
C11
INPUT
OUTPUT
180601_01
Reference circuit1 (not to scale)
Circuit Assembly Information
DUT
PTF180601
PCB
1.27 mm [0.050"] thick, εr = 6.0
LDMOS Transistor
TMM6
2 oz. copper, both sides
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
Dimensions: L x W (mm.)
10.16 x 1.88
4.95 x 1.88
7.14 x 18.31
4.83 x 0.76
8.13 x 26.42
15.24 x 1.14
2.54 x 18.16
5.26 x 6.53
5.46 x 1.88
1.65 x 1.88
Dimensions: L x W (in.)
0.400 x 0.074
0.195 x 0.074
0.281 x 0.721
0.190 x 0.030
0.320 x 1.040
0.600 x 0.045
0.100 x 0.715
0.207 x 0.257
0.215 x 0.074
0.065 x 0.074
Electrical Characteristics at 1990 MHz
0.140 λ, 50 Ω
0.068 λ, 50 Ω
0.112 λ, 9.24 Ω
0.064 λ, 78 Ω
0.127 λ, 6.64 Ω
0.206 λ, 65 Ω
0.035 λ, 9 Ω
0.077 λ, 21.87 Ω
0.075 λ, 50 Ω
0.023 λ, 50 Ω
1 Gerber files for this circuit are available on request.
Data Sheet
7
2004-05-03
PTF180601
Reference Circuit (cont.)
Component
C1, C7
Description
Capacitor, 10 µF, 35 V, SMD
Manufacturer
Digi-Key
C2, C8
C3, C5, C6, C9
C4
C10
C11
L1
L2
R1, R2
R3
Capacitor, 0.1 µF, 50 V
Capacitor, 10 pF
Capacitor, 1.1 pF
Capacitor, 0.4 pF
Capacitor, 1.3 pF
Chip Inductor, 2.7 µH
Ferrite, 6 mm
Resistor, 220 Ω
Resistor, 1.0 Ω
Digi-Key
ATC
ATC
ATC
ATC
Digi-Key
Philips
Digi-Key
Digi-Key
Data Sheet
8
P/N or Comment
PCS6106TR-ND
Tantalum TE Series
PCC103BCT-ND
100B 100
100B 1R1
100B 0R4
100B 1R3
PCD1287CT-ND
53/3/4.6-452
P220ECT
1.0 PCT
2004-05-03
PTF180601
Package Outline Specifications
Type
PTF180601C
PTF180601E
Package Outline
21248
30248
Package Description
Earless ceramic
Thermally enhanced, flange mount
Marking
PTF180601C
PTF180601E
Package 21248
( 45° X 2.72
[.107])
C
L
4.83±0.51
[.190±.020]
9.78
[.385]
D
LID 9.40 +0.10
-0.15
[.370+.004
-.006]
CL
19.43±0.51
[.765±.020]
G
2X 12.70
[.500]
19.81±0.20
[.780±.008]
SPH 1.58
[.062]
0.025 [.001]
0.51
[.020]
1.02
[.040]
-A-
S
20.57
[.810]
3.61±0.38
[.142±.015]
PKG_248_1
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
9
2004-05-03
PTF180601
Package Outline Specifications (cont.)
Package 30248
(45° X 2.72
[.107])
C
L
2X 4.83±0.51
[.190±.020]
D
9.78
[.385]
19.43 ±0.51
[.765±.020]
S
LID 9.40 +0.10
-0.15
[.370+.004
-.006 ]
C
L
G
2X 12.70
[.500]
2X R1.63
[.064]
4X R1.52
[.060]
27.94
[1.100]
1.02
[.040]
19.81±0.20
[.780±.008]
SPH 1.57
[.062]
3.76±0.38
[.142±.015]
0.0381 [.0015]
-A-
34.04
[1.340]
0.51
[.020]
P K G _248_0
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
10
2004-05-03
PTF180601
Confidential, Limited Internal
Revision History:
2004-05-03
Previous Version:
2003-12-22, Data Sheet
Page
Subjects (major changes since last revision)
PTF180601E added.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
[email protected]
To request other information, contact us at:
+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2004-05-03
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2003.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11
2004-05-03