MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U EBC C B Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -30 V VEBO Emitter-Base Voltage -10 V Collector Current - Continuous -1.2 A - 55 to +150 °C IC TJ, Tstg Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Ta = 25°C unless otherwise noted Max. Parameter MPSA63 *MMBTA63 **PZTA63 Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 1,000 8.0 RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 357 125 PD Units mW mW/°C °C/W °C/W * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”. ** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2. © 2010 Fairchild Semiconductor Corporation MPSA63 / MMBTA63 / PZTA63 Rev. A1 www.fairchildsemi.com 1 MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor August 2010 Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics ICBO Collector-Emitter Breakdown Voltage IC = -100μA, IB = 0 Collector-Cutoff Current VCB = -30V, IE = 0 IEBO Emitter-Cutoff Current BV(BR)CES -30 VEB = -10V, IC = 0 V -100 nA -100 nA On Characteristics * 5,000 10,000 DC Current Gain IC = -10mA, VCE = -5.0V IC = -100mA, VCE = -5.0V VCE(sat) Collector-Emitter Saturation Voltage IC = -100mA, IB = -0.1mA -1.5 V VBE(on) Base-Emitter On Voltage IC = -100mA, VCE = -5.0V -2.0 V hFE Small Signal Characteristics Current Gain - Bandwidth Product fT IC = -10mA, VCE = -5.0V, f = 100MHz 125 MHz * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Typical Pulsed Current Gain vs Collector Current VCESAT - COLLECTOR EM ITTE R VOLTAGE (V) h FE- TYPICAL PULSED CURRENT GAIN (K) Typical Performance Characteristics 50 VCE = 5V 40 30 125 °C 20 25 °C 10 - 40 °C 0 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 Figure 1. Typical Pulsed Current Gain vs Collector Current 1.6 β β = 1000 1.2 - 40 °C 0.8 25 °C 125 °C 0.4 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 Figure 2. Collector-Emitter Saturation Voltage vs Collector Current © 2010 Fairchild Semiconductor Corporation MPSA63 / MMBTA63 / PZTA63 Rev. A1 Collector-Emitter Saturation Voltage vs Collector Current www.fairchildsemi.com 2 MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor Electrical Characteristics 2 V BE( ON)- BASE EMITTER ON VOLTAGE (V) VBESAT - BASE EMITTE R VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current β = 1000 β - 40 °C 1.6 1.2 25 °C 125 °C 0.8 0.4 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 Base Emitter ON Voltage vs Collector Current 2 - 40 °C 1.6 1.2 25 °C 125 °C 0.8 V CE = 5V 0.4 0 0.001 Figure 3. Base-Emitter Saturation Voltage vs Collector Current 1 Figure 4. Base-Emitter On Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature Input and Output Capacitance vs Reverse Bias Voltage 100 16 f = 1.0 MHz V CB = 15V CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) 0.01 0.1 I C - COLLECTOR CURRENT (A) 10 1 0.1 12 8 C ib 4 C ob 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( ° C) 0 0.1 125 1 10 REVERSE VOLTAGE (V) 100 Figure 6. Input and Output Capacitance vs Reverse Bias Voltage Figure 5. Collector Cutoff Current vs Ambient Temperature Power Dissipation vs Ambient Temperature P D - POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 Figure 7. Power Dissipation vs Ambient Temperature © 2010 Fairchild Semiconductor Corporation MPSA63 / MMBTA63 / PZTA63 Rev. A1 www.fairchildsemi.com 3 MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor Typical Performance Characteristics (continued) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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