TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode (trr：200ns). The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, 113max ● IC＝300A, VCEX＝600V saturation voltage for higher efficiency. ● ULITRA HIGH DC current gain hFE. hFE≧750 ● Isolated mounting base ● VEBO 10V for faster switching speed. Collector-Base Voltage Collector-Emitter Voltage VCEX（sus） Collector-Emitter sustaining voltage 34.5 E1 B1 Unit：A Conditions Ratings QCA300BA60 Collector Current 600 V 600 V IC＝60V IB2＝−5A 600 V 10 V （ ）pw≦1ms Reverse Collector Current IB Base Current PT Total power dissipation Tj Junction Temperature Tstg Storage Temperature VISO Isolation Voltage Unit VBE＝−2V Emitter-Base Voltage Mounting Torque E2 B2 15 27 90max. 70±0.2 Item VCEX −IC NAME PLATE （Tj＝25℃ unless otherwise specified） VCBO IC 31max. C1 ■Maximum Ratings VEBO B1X E2 B1X Symbol 3-M6 Tab＃110 t =0.5 B2 E2 C2E1 C B2X B2X E2 4ｰφ6.5 B1 E1 C2E1 ● Low （Applications） Motor Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 93±0.2 25 25 31.5 TC＝25℃ 300（600） A 300 A 18 A 1380 W −40 to ＋150 ℃ −40 to ＋125 ℃ 2500 V Mounting（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） N･m (㎏f･B) 675 g Mass A.C.1minute Typical Value ■Electrical Characteristics Symbol Item Conditions ICBO Collector Cut-off Current VCB＝VCBO IEBO Emitter Cut-off Current VEB＝VEBO hFE D.C. Current Gain Ic＝300A，VCE＝2.5V VCE（sat） Collector-Emitter Saturation Voltage VBE（sat） Base-Emitter Saturation Voltage ton ts trr Rth（j-c） Min. Typ. Storage Time Fall Time Max. mA 500 mA Ic＝300A，IB＝400mA 2.5 V Ic＝300A，IB＝400mA 3.0 V 750 2.0 Vcc＝300V，Ic＝300A IB1＝0.6A，IB2＝−6A 8.0 μs 2.0 Collector-Emitter Reverse Voltage Ic＝−300A Reverse Recovery time Vcc＝300V, Ic＝−300A, −di/dt＝300A/μs, VBE＝−5V Thermal Impedance (junction to case) Transistor part 0.08 Diode part 0.35 SanRex Unit 4.0 On Time Switching Time tf VECO Ratings 2.2 V 200 ns ℃/W ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] QCA300BA60 D.C. Current Gain VCE＝5V Typical VCE＝2.5V DC Current Gain hFE １０４ ５ Tj＝125℃ ２ １０３ Tj＝25℃ ５ ２ １０１ ２ １０２ ５ ２ ５ Saturation Characteristics Collector-Emitter Voltage VＣＥ （V） Base-Emitter Voltage VBE（V） ２ Ic＝120A Ic＝200A Ic＝300A ５ Typical VCE （sat） ４ VBE（sat） Tj＝25℃ ３ Ic＝200A Ic＝120A ２ １ ０ １０３ １０-２ ２ Collector Current Ic（A） Collector Current Ic（A） 50 1μ s ５ 0μ s ２ １０１ ５ ２ Non-Repetitive ５ ５ １０１ ２ ５ １０２ ２ ４００ IB2＝−10A ２００ Tj＝125℃ ０ ０ １０３ ５ Second Breakdown Limit Thermal Limit ０ ０ ５０ １００ Collector Reverse Current -Ic（A） Collector Current Derating Factor ５０ ５ ５００ ６００ ２ ５ Typical Tj＝25℃ ２ １０１ ５ ２ １００ ５ ０ １０ ２０ ３０ Transient Thermal Impedance θj-c（℃/W） Transient Thermal Impedance １０-１ Typical Tj＝25℃ ts 100msec∼100sec ５ Maximum Transisto Part ２ １０-２ １００ ton tf IB1＝0.6A IB2＝−6.0A VCC＝300V １０-１ ５ ０ ４００ Emitter-Collector Voltage VECO（V） ５ ２ ３００ １０２ １５０ Collector Current Vs Switching Time ５ ２００ Forward Voltage of Free Wheeling Diode Case Temperature（℃） ２ １００ Collector-Emitter Voltage VCE（V） １００ Derating Factor（%） ２ IB2＝−3.5A Collector-Emitter Voltage VCE（V） Switching Time ton tf ts（μs） １００ ５ Tc＝25℃ １００ １０１ ２ ６００ Collector Current Ic（A） 0μ Pulse Wide s １０２ １０-１ Reverse Bias Safe Operating Area 10 ５ ２ ５ Base Current I（ B A） Forward Bias Safe Operating Area １０3 Ic＝300A １００ ２００ Collector Current Ic（A） ３００ ５ 200μsec∼100msec ２ １０-３ ５ ２ １０-１ ２ ５ １０-３ ５ １００ ２ ２ ５ ５ １０-２ ２ １０１ ２ ５ １０-１ ５ １０２ Time t（sec） SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]