30C02MH Ordering number : EN7364B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 30C02MH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive Features • • • • • Large current capacity Low collector-to-emitter saturation voltage (resistance)) : RCE(sat) typ=330mΩ [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturization in end products Small ON-resistance (Ron) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg When mounted on ceramic substrate (600mm2×0.8mm) 0.25 Packing Type : TL °C °C 1.6 CL LOT No. 0 to 0.02 A mW Marking LOT No. 3 1.4 600 150 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 30C02MH-TL-E 30C02MH-TL-H V mA -55 to +150 Product & Package Information 0.25 TL 1 0.65 2 Electrical Connection 0.3 3 0.07 0.85 2.1 V 5 unit : mm (typ) 7019A-004 0.15 V 30 700 Package Dimensions 2.0 Unit 40 1 : Base 2 : Emitter 3 : Collector 1 SANYO : MCPH3 2 http://semicon.sanyo.com/en/network 71812 TKIM/60210EA TKIM TC-00002359/O2203 TSIM TA-100141 No.7364-1/6 30C02MH Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Ratings Conditions min typ ICBO IEBO VCB=30V, IE=0A VEB=4V, IC=0A VCE=2V, IC=50mA Gain-Bandwidth Product hFE fT VCE=10V, IC=50mA 540 Output Capacitance Cob 3.3 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=200mA, IB=10mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time 300 IC=200mA, IB=10mA Unit max 100 nA 100 nA 800 MHz pF 85 190 mV 0.9 1.2 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 40 V IC=1mA, RBE=∞ 30 V V(BR)EBO ton IE=10μA, IC=0A 5 tstg tf See specified Test Circuit. V 35 ns 255 ns 40 ns Switching Time Test Circuit IB1 PW=20μs D.C. ≤1% OUTPUT IB2 INPUT RB VR RL 50Ω + 470μF + 220μF VBE= --5V VCC=12V IC=20IB1= --20IB2=300mA Ordering Information Package Shipping memo 30C02MH-TL-E Device MCPH3 3,000pcs./reel Pb Free 30C02MH-TL-H MCPH3 3,000pcs./reel Pb Free and Halogen Free IC -- VCE A 1mA 400μA 200 200μA 100 0 0 500 400 300 200 --25°C 2mA 600 Ta=7 5°C 25°C 3mA 700 Collector Current, IC -- mA 15m 5mA 400 300 VCE=2V 7mA 30m 500 A 10m IC -- VBE 800 50m Collector Current, IC -- mA 600 A 20mA A 700 100 IB=0A 100 200 300 400 500 600 700 800 Collector-to-Emitter Voltage, VCE -- mV 900 1000 IT05082 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 IT05083 No.7364-2/6 30C02MH hFE -- IC 1000 VCE=2V DC Current Gain, hFE 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Ta=75°C 25°C 5 --25°C 3 2 100 1.0 2 3 2 5 7 10 3 2 5 7 100 3 3 2 °C 25 7 5°C =7 Ta 5°C --2 2 10 1.0 2 5 7 10 3 2 3 5 7 100 2 Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 5 3 2 5 7 2 10 3 Collector-to-Base Voltage, VCB -- V ON Resistance, Ron -- Ω 1kΩ 3 IB 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 2 3 5 7 100 2 10 IT06793 3 5 7 1000 IT05085 5 3 2 1.0 Ta=--25°C 7 5 75°C 25°C 3 2 2 3 5 7 10 2 3 5 7 100 2 3 fT -- IC 5 7 1000 IT05087 VCE=10V 7 5 3 2 2 3 5 7 10 2 3 5 7 100 2 Collector Current, IC -- mA PC -- Ta 3 5 7 1000 IT05089 When mounted on ceramic substrate (600mm2×0.8mm) OUT IN 5 5 7 10 700 1kΩ f=1MHz 3 IC / IB=20 IT05088 Collector Dissipation, PC -- mW 7 2 VBE(sat) -- IC 100 1.0 5 Ron -- IB 10 3 2 1000 7 3 °C Collector Current, IC -- mA f=1MHz 2 5 --2 10 7 5 IT05086 Cob -- VCB 1.0 1.0 7 Ta= 0.1 1.0 5 7 1000 3 Collector Current, IC -- mA 10 5°C 3 2 7 5 3 °C 25 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 100 7 5 Collector Current, IC -- mA IC / IB=50 100 3 2 IT05084 VCE(sat) -- IC 1000 IC / IB=20 1.0 1.0 5 7 1000 Collector Current, IC -- mA VCE(sat) -- IC 1000 7 5 600 500 400 300 200 100 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05092 No.7364-3/6 30C02MH Embossed Taping Specification 30C02MH-TL-E, 30C02MH-TL-H No.7364-4/6 30C02MH Outline Drawing 30C02MH-TL-E, 30C02MH-TL-H Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.7364-5/6 30C02MH Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2012. Specifications and information herein are subject to change without notice. PS No.7364-6/6