MITSUBISHI QM15DX-2H

MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15DX-2H
•
•
•
•
•
IC
Collector current .......................... 15A
VCEX Collector-emitter voltage ......... 1000V
hFE
DC current gain............................... 75
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
92
C
10.5 10.5 10.5 10.5
φ1.65
8.0 8.35
CE
C
30
(4.5)
19.5
LABEL
E
7.95
3.4
Tab#250,
t=0.8
B1
35
CE
(21)
B1
0.8
B2
E
B2
φ5.5
80
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
(Tj=25°C, unless otherwise noted)
Parameter
Ratings
Unit
VCEX (SUS)
Collector-emitter voltage
IC=1A, VEB=2V
1000
V
VCEX
Collector-emitter voltage
VEB=2V
1000
V
VCBO
Collector-base voltage
Emitter open
1000
V
VEBO
Emitter-base voltage
Collector open
7
V
IC
Collector current
DC
15
A
–IC
Collector reverse current
DC (forward diode current)
15
A
PC
Collector dissipation
TC=25°C
150
W
IB
Base current
DC
1
A
–ICSM
Surge collector reverse current
(forward diode current)
Peak value of one cycle of 60Hz (half wave)
150
A
Tj
Junction temperature
–40~+150
°C
Tstg
Storage temperature
–40~+125
°C
Viso
Isolation voltage
Symbol
Conditions
Charged part to case, AC for 1 minute
—
Mounting torque
Mounting screw M5
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
2500
V
1.47~1.96
N·m
15~20
kg·cm
155
g
(Tj=25°C, unless otherwise noted)
Limits
Symbol
Test conditions
Parameter
Min.
Typ.
Max.
Unit
ICEX
Collector cutoff current
VCE=1000V, VEB=2V
—
—
1.0
mA
ICBO
Collector cutoff current
VCB=1000V, Emitter open
—
—
1.0
mA
IEBO
Emitter cutoff current
VEB=7V
—
—
100
mA
VCE (sat)
Collector-emitter saturation voltage
—
—
2.5
V
VBE (sat)
Base-emitter saturation voltage
—
—
3.5
V
–VCEO
Collector-emitter reverse voltage
–IC=15A (diode forward voltage)
—
—
1.5
V
hFE
DC current gain
IC=15A, VCE=2.8V/5V
75/100
—
—
—
—
—
2.5
µs
Switching time
VCC=600V, IC=15A, IB1=–IB2=0.3A
—
—
15
µs
—
—
3.0
µs
Transistor part (per 1/2 module)
—
—
0.8
°C/ W
Diode part (per 1/2 module)
—
—
1.2
°C/ W
Conductive grease applied (per 1/2 module)
—
—
0.25
°C/ W
IC=15A, IB=0.3A
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
2
50
DC CURRENT GAIN hFE
40
30
IB=0.4A
IB=0.2A
20
IB=0.1A
IB=0.06A
10
0
IB=0.02A
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
5
VCE=2.8V
Tj=25°C
10 0
7
5
4
3
2
10 –1
1.8
2.2
2.6
3.0
BASE-EMITTER VOLTAGE
10 2
7
5
4
3
2
10 0
3.4
3.8
10 1
7
5
4
3
2
Tj=25°C
Tj=125°C
2 3 4 5 7 10 1
2 3 4 5 7 10 2
VBE(sat)
10 0
VCE(sat)
7
5
4
3
IB=0.3A
2
Tj=25°C
10 –1
10 0
VBE (V)
Tj=125°C
2 3 4 5 7 10 1
2 3 4 5 7 10 2
COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
ton, ts, tf (µs)
5
4
3
2
IC=10A IC=15A
IC=5A
1
Tj=25°C
Tj=125°C
3 4 5 7 10 –2
2 3 4 5 7 10 –1
BASE CURRENT IB (A)
2 3
SWITCHING TIME
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
VCE=2.8V
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
0
VCE=5.0V
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
BASE CURRENT IB (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10 1
7
5
4
3
2
10 3
7
5
4
3
2
VCE (V)
SATURATION VOLTAGE
COLLECTOR CURRENT IC (A)
Tj=25°C
10 1
7
5
4
3
2
10 0
7
5
4
3
2
10 0
ts
tf
ton
2 3 4 5 7 10 1
Tj=25°C
Tj=125°C
VCC=600V
IB1=–IB2=0.3A
2 3 4 5 7 10 2
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
40
ts
10 1
7
5
4
3
2
10 0
7
5
4
3
COLLECTOR CURRENT IC (A)
SWITCHING TIME
ts, tf (µs)
3
2
REVERSE BIAS SAFE OPERATING AREA
tf
VCC=600V
IB1=0.3A
IC=15A
Tj=25°C
Tj=125°C
3 4 5 7 10 –1
IB2=–0.5A
30
IB2=1A
20
10
Tj=125°C
2 3 4 5 7 10 0
0
2 3
BASE REVERSE CURRENT –IB2 (A)
0
10 0
7
5
3
2 TC=25°C
NON-REPETITIVE
10 –1
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
80
70
60
50
COLLECTOR
DISSIPATION
40
30
20
10
0
0
VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 0 2 3 4 5 7 10 1 2 3 4 5
1.0
0.8
0.6
0.4
0.2
0
10 –3 2 3 4 5 7 10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0
TIME (s)
DERATING FACTOR (%)
C
VCE (V)
SECOND
BREAKDOWN
AREA
90
20
40
60
80 100 120 140 160
CASE TEMPERATURE
COLLECTOR REVERSE CURRENT –IC (A)
s
s
COLLECTOR CURRENT IC (A)
1m
D
1000
800
DERATING FACTOR OF F. B. S. O. A.
100µs
COLLECTOR-EMITTER VOLTAGE
Zth (j–c) (°C/ W)
600
100
200µs
500µ
10 1
7
5
3
2
400
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
10 2
7
5
3
2
200
10 2
7
5
4
3
2
TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
Tj=25°C
Tj=125°C
10 1
7
5
4
3
2
10 0
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
180
160
140
120
100
80
60
40
20
0
10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
10 1
10 2
7
5
4
3
2
10 1
7
5
4
3
2
10 0
10 0
VCC=600V
IB1=–IB2=0.3A
Irr
trr
Qrr
2 3 4 5 7 10 1
trr (µs)
200
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
10 0
Tj=25°C
Tj=125°C
10 –1
2 3 4 5 7 10 2
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE )
10 0 2 3 4 5 7 10 1 2 3 4 5 7
2.0
Zth (j–c) (°C/ W)
1.6
1.2
0.8
0.4
0
10 –3 2 3 4 5 7 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0
TIME (s)
Feb.1999