ROHM R5007ANX

10V Drive Nch MOSFET
R5007ANX
Dimensions (Unit : mm)
Structure
Silicon N-channel MOSFET
TO-220FM
φ3.2
10.0
4.5
8.0
1.2
1.3
14.0
2.5
15.0
Features
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS) guaranteed to be 30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
12.0
2.8
0.8
(1)Base
2.54
(2)Collector
2.54
0.75
2.6
(1) (2) (3)
(3)Emitter
Applications
Switching
Packaging specifications
Inner circuit
Package
Bulk
−
Code
Type
500
Basic ordering unit (pieces)
∗1
R5007ANX
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
VDSS
500
V
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
±30
V
∗3
±7
A
∗1
±28
A
7
A
∗1
28
A
3.5
A
3.2
mJ
40
W
VGSS
Continuous
ID
Pulsed
IDP
Continuous
IS
Pulsed
ISP
∗3
Avalanche Current
IAS
∗2
∗2
Avalanche Energy
EAS
Total power dissipation (Tc=25°C)
PD
Channel temperature
Tch
150
°C
Tstg
−55 to +150
°C
Range of storage temperature
(1)
(1) Gate
(2) Drain
(3) Source
(2)
(3)
∗1 Body Diode
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum tempterature allowed
Thermal resistance
Parameter
Channel to case
Symbol
Limits
Unit
Rth(ch-c)
3.13
°C/W
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○
1/5
2010.01 - Rev.B
R5007ANX
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±100
nA
VGS=±30V, VDS=0V
V(BR)DSS
500
−
−
V
ID=1mA, VGS=0V
IDSS
−
−
100
μA
VDS=500V, VGS=0V
Gate threshold voltage
VGS(th)
2.5
−
4.5
V
VDS=10V, ID=1mA
Static drain-source on-state resistance
RDS(on) ∗
−
0.8
1.05
Ω
ID=3.5A, VGS=10V
Forward transfer admittance
| Yfs |
2.5
−
−
S
ID=3.5A, VDS=10V
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
∗
Conditions
Input capacitance
Ciss
−
500
−
pF
VDS=25V
Output capacitance
Coss
−
300
−
pF
VGS=0V
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
tr
Rise time
Turn-off delay time
td(off)
tf
Fall time
Qg
Total gate charge
Gate-source charge
Qgs
Gate-drain charge
Qgd
−
23
−
pF
f=1MHz
∗
−
20
−
ns
ID=3.5A, VDD 250V
∗
−
22
−
ns
VGS=10V
∗
−
50
−
ns
RL=71.4Ω
∗
−
25
−
ns
RG=10Ω
∗
−
13
−
nC
∗
−
3.5
−
nC
∗
−
5.5
−
nC
VDD 250V
ID=7A
VGS=10V
RL=35.7Ω / RG=10Ω
∗ Pulsed
Body diode characteristics (Source-drain) (Ta=25C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
Typ.
Max.
−
−
1.5
Unit
V
Conditions
IS= 7A, VGS=0V
∗ Pulsed
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c 2010 ROHM Co., Ltd. All rights reserved.
○
2/5
2010.01 - Rev.B
R5007ANX
Data Sheet
Electrical characteristic curves
10
10
PW =1ms
1
DC operation
0.1
Ta = 25°C
Single Pulse
7.0V
8
5.5V
4
5.0V
2
100
1000
0
0.1
0.01
1.5
10
1
3.0
4.5
6.0
2.5
2
1.5
ID= 7.0A
1
ID= 3.5A
0.5
0
5
10
15
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source
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c 2010 ROHM Co., Ltd. All rights reserved.
○
40
50
0
1
4
3
2
1
0
-50
4
5
Fig.3: Typical Output Characteristics(Ⅱ)
0
50
100
150
VGS= 10V
Pulsed
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.1
1
2
ID= 7A
1
ID= 3.5A
0.5
0
-50
0
100
DRAIN CURRENT : ID (A)
100
VGS= 10V
Pulsed
1.5
10
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.5 Gate Threshold Voltage
vs. Channel
2.5
3
10
VDS= 10V
ID= 1mA
5
3
2
DRAIN-SOURCE VOLTAGE: VDS (V)
CHANNEL TEMPERATURE: Tch (°C)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
Ta=25°C
Pulsed
30
6
GATE-SOURCE VOLTAGE : VGS (V)
3
20
Fig.2: Typical Output Characteristics(Ⅰ)
Fig.4 Typical Transfer Characteristics
0
5.0
DRAIN-SOURCE VOLTAGE: VDS (V)
GATE THRESHOLD VOLTAGE: VGS(th) (V)
DRAIN CURRENT : ID (A)
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.001
0.0
6.0
2
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
10
VDS= 10V
Pulsed
1
5.5
VGS= 4.5V
50
100
150
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel
3/5
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
1
Fig.1 Maximum Safe Operating Aera
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
7.0
6.5
0
DRAIN-SOURCE VOLTAGE : VDS ( V )
10
10
8.0
3
0
0.1
Ta= 25°C
Pulsed
4
VGS= 4.5V
0.01
100
6.0V
6.5V
6
5
Ta= 25°C
Pulsed
10V
8.0V
PW =100us
DRAIN CURRENT: ID (A)
Operation in this
area is limited
by RDS(ON)
DRAIN CURRENT: ID (A)
DRAIN CURRENT : ID (A)
100
VDS= 10V
Pulsed
10
1
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
0.1
0.01
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
2010.01 - Rev.B
Data Sheet
10000
100
15
10
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
1000
Ciss
Crs
100
Coss
10
Ta= 25°C
f= 1MHz
VGS= 0V
1
0.01
0
0.5
1
1
100
1000
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
10000
SWITCHING TIME : t (ns)
REVERSE RECOVERY TIME: trr (ns)
10
DRAIN-SOURCE VOLTAGE : VDS (V)
1000
100
Ta= 25°C
di / dt= 100A / μs
VGS= 0V
Pulsed
10
5
0
5
10
15
20
25
TOTAL GATE CHARGE : Qg (nC)
Fig.12 Dynamic Input Characteristics
Ta= 25°C
VDD= 250V
VGS= 10V
RG= 10Ω
Pulsed
tf
1000
100
Ta= 25°C
VDD= 250V
ID= 7A
RG= 10Ω
Pulsed
0
0.1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
td(off)
10
td(on)
tr
1
10
0.1
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
GATE-SOURCE VOLTAGE : VGS (V)
VGS= 0V
Pulsed
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : IDR (A)
R5007ANX
1
10
0.01
100
0.1
1
10
100
REVERSE DRAIN CURRENT : IDR (A)
DRAIN CURRENT : ID (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
Fig.14 Switching　Characteristics
10
1
0.1
Ta = 25°C
Single Pulse : 1Unit
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）
Rth（ch-a） = 54.3°C/W
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE W IDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth
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c 2010 ROHM Co., Ltd. All rights reserved.
○
4/5
2010.01 - Rev.B
R5007ANX
Data Sheet
Switching characteristics measurement circuit
Fig.1 Switching time measurement circuit
Fig.2 Switching waveforms
IG(Const.)
Fig.3 Gate charge measurement circuit
Fig.5
Fig.4 Gate charge waveform
Avalanche measurement circuit
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c 2010 ROHM Co., Ltd. All rights reserved.
○
Fig.6
5/5
Avalanche waveform
2010.01 - Rev.B
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R1010A