MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4045MR RoHS Compliance , 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 400-450MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Reverse PIN type • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power BLOCK DIAGRAM 2 3 1 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H2S RoHS COMPLIANCE • RA45H4045MR-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA45H4045MR-101 Antistatic tray, 10 modules/tray RA45H4045M MITSUBISHI ELECTRIC 1/8 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H4045MR MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS VDD Drain Voltage VGG<5V VGG Gate Voltage VDD<12.5V, Pin=0mW Pin Input Power Pout Output Power Tcase(OP) Tstg RATING UNIT 17 V 6 V 100 mW 55 W Operation Case Temperature Range -30 to +110 °C Storage Temperature Range -40 to +110 °C TYP MAX UNIT 450 MHz f=400-450MHz, ZG=ZL=50Ω Above Parameters are guaranteed independently ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER f Pout ηT CONDITIONS Frequency Range 400 Output Power Total Efficiency nd 2fo 2 ρin Input VSWR Harmonic IGG Gate Current — Stability — Load VSWR Tolerance MIN VDD=12.5V VGG=5V Pin=50mW VDD=10.0-15.2V, Pin=25-70mW, Pout<55W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout=45W (VGG control), Load VSWR=20:1 45 W 35 % -25 dBc 3:1 — 1 mA No parasitic oscillation — No degradation or destroy — All Parameters, Conditions, Ratings and Limits are subject to change without notice RA45H4045MR MITSUBISHI ELECTRIC 2/8 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H4045MR TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) rd 2nd, 3 HARMONICS versus FREQUENCY 70 Pout 60 60 50 50 ηT 40 40 30 30 VDD=12.5V VGG=5V Pin=50mW 20 10 ρin 20 10 -20 -40 -50 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 40 16 30 12 IDD 20 8 f=400MHz, VDD=12.5V, VGG=5V 10 4 0 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 20 Gp 0 -15 -10 -5 0 5 10 15 rd 400 410 420 430 440 FREQUENCY f(MHz) 450 460 60 DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 50 3 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 24 Pout 2nd -60 -70 390 0 0 390 400 410 420 430 440 450 460 FREQUENCY f(MHz) 60 VDD=12.5V VGG=5V Pin=50mW -30 24 Pout 50 20 Gp 40 16 30 12 20 8 IDD f=430MHz, VDD=12.5V, VGG=5V 10 0 20 -15 -10 INPUT POWER Pin(dBm) -5 0 5 10 15 4 DRAIN CURRENT IDD(A) 80 70 HARMONICS (dBc) 80 TOTAL EFFICIENCY ηT(%) INPUT VSWR ρin (-) OUTPUT POWER P out(W) OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY 0 20 INPUT POWER Pin(dBm) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 24 Pout 50 20 Gp 40 16 30 12 20 8 IDD f=450MHz, VDD=12.5V, VGG=5V 10 0 -15 -10 -5 0 5 10 15 4 DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 60 0 20 INPUT POWER Pin(dBm) 20 18 16 14 12 10 8 6 4 2 0 Pout IDD 2 RA45H4045MR 4 6 8 10 12 14 DRAIN VOLTAGE VDD(V) 16 100 90 80 70 60 50 40 30 20 10 0 f=430MHz, VGG=5V, Pin=50mW 20 18 16 14 12 10 8 6 4 2 0 Pout IDD 2 4 6 8 10 12 14 DRAIN VOLTAGE VDD(V) MITSUBISHI ELECTRIC 3/8 DRAIN CURRENT IDD(A) f=400MHz, VGG=5V, Pin=50mW OUTPUT POWER P out(W) 100 90 80 70 60 50 40 30 20 10 0 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 16 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H4045MR TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) f=450MHz, VGG=5V, Pin=50mW 20 18 16 14 12 10 8 6 4 2 0 Pout IDD 2 4 6 8 10 12 14 DRAIN VOLTAGE VDD(V) 16 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 80 60 50 14 Pout 12 10 IDD 40 8 30 6 20 4 10 2 0 0 2.5 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) 5.5 OUTPUT POWER P out(W) 16 f=400MHz, VDD=12.5V, Pin=50mW 70 DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) 80 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 16 f=430MHz, VDD=12.5V, Pin=50mW 70 60 14 Pout 50 12 10 IDD 40 8 30 6 20 4 10 2 0 0 2.5 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) DRAIN CURRENT IDD(A) 100 90 80 70 60 50 40 30 20 10 0 DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 5.5 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 16 f=450MHz, VDD=12.5V, Pin=50mW 70 60 50 14 Pout 12 10 IDD 40 8 30 6 20 4 10 2 0 0 2.5 RA45H4045MR 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) DRAIN CURRENT IDD(A) OUTPUT POWER P out(W) 80 5.5 MITSUBISHI ELECTRIC 4/8 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4045MR RoHS COMPLIANCE OUTLINE DRAWING (mm) 66.0 ±0.5 7.25 ±0.8 51.5 ±0.5 2 2.0 ±0.5 3 1 4.0 ±0.3 9.5 ±0.5 5 4 14.0 ±1 2-R2 ±0.5 17.0 ±0.5 60.0 ±0.5 21.0 ±0.5 3.0 ±0.3 Ø0.45 ±0.15 10.5 ±1 22.5 ±1 49.5 ±1 (50.4) (9.88) 2.3 ±0.3 7.5 ±0.5 0.09 ±0.02 3.1 +0.6/-0.4 54.0 ±1 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) RA45H4045MR MITSUBISHI ELECTRIC 5/8 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H4045MR TEST BLOCK DIAGRAM DUT Spectrum Analyzer 4 Power Meter Attenuator 2 3 1 ZG=50Ω ZL=50Ω Directional Coupler Power Meter 5 Directional Coupler C2 Attenuator Preamplifier Attenuator Signal Generator C1 + DC Power Supply VDD + DC Power Supply VGG C1, C2: 4700pF, 22uF in parallel 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT 3 2 1 4 5 RA45H4045MR MITSUBISHI ELECTRIC 6/8 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H4045MR PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap is attached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection. Following conditions shall be avoided: a) Bending forces on the alumina substrate (for example during screwing or by fast thermal changes) b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion) c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichloroethylene) d) Frequent on/off switching causing thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc. ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: The heat sink flatness shall be less than 50µm (not flat heat sink or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when thermal expansion forces are added). Thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink. The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB. M3 screws are recommended with tightening torque 0.4 to 0.6Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads shall be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=45W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ ηT=35% VDD Pout Rth(ch-case) Pin Stage (°C/W) (A) (W) (W) (V) st 1 0.05 2.0 23.0 0.24 12.5 2nd 2.0 12.0 2.4 2.80 rd 3 12.0 45.0 1.2 6.80 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.24A – 2.0W + 0.05W) x 23.0°C/W = Tcase + 24.2 °C Tch2 = Tcase + (12.5V x 2.80A - 12.0W + 2.0W) x 2.4°C/W = Tcase + 60.0 °C Tch3 = Tcase + (12.5V x 6.80A - 45.0W + 12.0W) x 1.2°C/W = Tcase + 62.4 °C For long term reliability the module case temperature Tcase is better kept below 90°C. For an ambient temperature Tair=60°C and Pout=45W the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (45W/35% – 45W + 0.05W) = 0.36 °C/W When mounting the module with the thermal resistance of 0.36 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 54.2 °C Tch2 = Tair + 90.0 °C Tch3 = Tair + 92.4 °C 175°C maximum rating for the channel temperature ensures application under derated conditions. RA45H4045MR MITSUBISHI ELECTRIC 7/8 24 Jan 2006 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H4045MR Output Power Control: Depending on linearity following 2 methods are recommended to control the output power: a) Non-linear FM modulation: By Gate voltage VGG. When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage current is flowing from the battery into the Drain. Around VGG=4V the output power and Drain current increases strongly. Around VGG=4.5V, latest at VGG=5V, the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The Gate voltage is used to set the Drain quiescent current for the required linearity. Oscillation: To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a 4.700pF chip capacitor, located close to the module, and a 22µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ? b) Is the load impedance ZL=50Ω ? c) Is the source impedance ZG=50Ω ? Frequent on/off switching: In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long time thermally induced mechanical stress. Quality: MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating conditions exceeding those in Mobile Radios. The technology of this module is the result of more than 20 years experience, field proven in several 10 million Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which are caused by handling or operating conditions. Few degradation failures can be found. Keep safety first in your circuit d i ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RA45H4045MR MITSUBISHI ELECTRIC 8/8 24 Jan 2006