RB058L-60 Data Sheet Schottky Barrier Diode RB058L-60 lApplications General rectification lExternal Dimensions(Unit : mm) lLand Size Figure(Unit : mm) 2.6±0.2 2 PMDS 2.0±0.2 1.5±0.2 lConstruction Silicon epitaxial 2.0 0.1±0.02 0.1 lStructure ROHM : PMDS JEDEC : SOD-106 1 2 4.2 1 5.0±0.3 3 1.2±0.3 9 4.5±0.2 lFeatures 1)Small power mold type.(PMDS) 2)High reliability 3)AEC-Q101 qualified 2.0 Manufacture Date lTaping Dimensions(Unit : mm) 2.0±0.05 0.3 φ 1.55±0.05 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 4.0±0.1 φ 1.55 2.9±0.1 4.0±0.1 2.8MAX lAbsolute Maximum Ratings(Ta=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive) VRM 60 V Reverse voltage (DC) VR 60 V Average rectified forward current (*1) Io 3 A IFSM 70 A Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Forward current surge peak (60Hz・1cyc) (*1)Mounting on epoxi board. 180°Half sine wave lElectrical Characteristics(Ta=25°C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage VF - - 0.64 V IF=3.0A Reverse current IR - - 4.0 mA VR=60V www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/4 2012.08 - Rev.A Data Sheet RB058L-60 10000 10 REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) Ta = 150°C 1000 Ta = 150°C 1 Ta = 125°C Ta = 75°C 0.1 Ta = 25°C 100 Ta = 125°C 10 1 Ta = 75°C 0.1 Ta = 25°C 0.01 Ta = -25°C Ta = -25°C 0.01 0.001 100 200 300 400 500 600 700 0 10 20 30 40 60 650 1000 f = 1MHz Ta=25°C VF=3A n=30pcs FORWARD VOLTAGE:VF(mV) 640 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 50 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 100 630 620 610 600 AVE : 585.4mV 590 580 570 560 550 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 800 700 Ta=25°C VR=60V n=30pcs 500 AVE : 304.2nA 400 300 200 Ta=25°C f=1MHz VR=0V n=10pcs 775 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 600 750 725 AVE : 683.5pF 700 675 100 650 0 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.08 - Rev.A Data Sheet RB058L-60 500 20 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM RESERVE RECOVERY TIME:trr(ns) 19 450 8.3ms 1cyc. 400 350 AVE : 248A 300 250 18 17 16 AVE : 13.8ns 15 14 13 12 11 200 10 IFSM DISRESION MAP trr DISPERSION MAP 10000 10000 8.3ms 8.3ms IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 1cyc. 1000 100 10 time 1000 100 10 1 10 100 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1000 2.0 IM=10mA IF=3A 1.5 Rth(j-a) time 100 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) Mounted on epoxy board 1ms 300ms Rth(j-c) 10 D = 1/2 1.0 Sin(θ＝180) DC 0.5 1 0.01 0.0 0.1 1 10 100 0 1000 2 3 4 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 3/4 2012.08 - Rev.A Data Sheet RB058L-60 0.05 8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.04 0.03 DC 0.02 D = 1/2 Sin(θ = 180) Io VR 6 t DC T D=t/T VR=30V Tj=150°C D = 1/2 4 2 Sin(θ = 180) 0.01 0 0 0 10 20 30 40 50 60 0 8 0V T D=t/T VR=30V Tj=150°C 5 D = 1/2 4 3 Sin(θ = 180) 2 100 125 150 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) DC 75 No Break at 30kV VR t 6 50 30 Io 0A 7 25 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V 20 15 AVE : 6.8kV 10 5 1 0 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 4/4 2012.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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