Data Sheet Schottky Barrier Diode RB501V-40 Dimensions (Unit : mm) Applications Low current rectification Land size figure (Unit : mm) 0.1±0.1 0.05 0.9MIN. 0.8MIN. 1.25±0.1 2.5±0.2 1.7±0.1 2.1 Features 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. UMD2 Construction Silicon epitaxial planar 0.7±0.2 0.1 0.3±0.05 Structure ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) Taping specifications (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 4.0±0.1 1.40±0.1 2.8±0.1 2.75 8.0±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ1.05 1.0±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Electrical characteristics (Ta=25°C) Parameter Forawrd voltage Reverse current Capacitance between terminals www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Limits 45 40 100 1 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg Unit V V mA A °C °C Symbol VF 1 VF 2 IR Min. Typ. Max. Unit - - 0.55 0.34 30 V V μA IF=100mA IF=10mA VR=10V Ct - 6.0 - pF VR=10V , f=1MHz 1/3 Conditions 2011.05 - Rev.B Data Sheet RB501V-40 100 10000 f=1MHz Ta=25℃ 1 Ta=-25℃ 0.1 0.01 0 100 200 300 400 500 1000 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS Ta=25℃ IF=100mA n=30pcs 460 450 440 430 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 290 280 270 AVE:281.5mV 260 14 12 10 8 6 4 AVE:5.81pF 2 20 15 10 30 1cyc Ifsm 15 8.3ms 10 5 AVE:5.50A 0 0 Ct DISPERSION MAP Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:6.20ns 0 trr DISPERSION MAP IFSM DISRESION MAP 15 15 AVE:2.548uA 5 IR DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 16 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ f=1MHz IR=10V n=10pcs Ta=25℃ VR=10V n=10pcs 0 20 18 30 25 VF DISPERSION MAP 20 20 30 300 VF DISPERSION MAP 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ IF=10mA n=30pcs AVE:439.5mV 420 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 35 310 FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 470 10 1 0.01 600 REVERSE CURRENT:IR(uA) Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 100 Ta=125℃ Ta=125℃ 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 10 5 0 0.1 1 10 t 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 2/3 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Rth(j-a) Ifsm 100 Rth(j-c) Mounted on epoxy board IM=10mA 10 1ms IF=100mA time 300us 1 0.001 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS 2011.05 - Rev.B Data Sheet RB501V-40 REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.08 D=1/2 0.06 DC Sin(θ＝180) 0.04 0.02 0.07 0.3 0.06 0.25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.1 0.05 0.04 Sin(θ＝180) 0.03 D=1/2 DC 0.02 0.01 0 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0A 0V 0.2 DC Io t T VR D=t/T VR=20V Tj=125℃ 0.15 D=1/2 0.1 Sin(θ＝180) 0.05 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0A 0V 0.25 Io t 0.2 DC 0.15 T VR D=t/T VR=20V Tj=125℃ D=1/2 0.1 0.05 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A