ROHM RB551SS-30

Data Sheet
Schottky Barrier Diode
RB551SS-30
lApplications
General Rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
1.2
0.5
1.6±0.05
lFeatures
1)Small mold type (KMD2)
2)High reliability
3)Low VF
lConstruction
Silicon epitaxial planer
1.2±0.05
0.8
0.8±0.05
0.6±0.03
0.7±0.05
0.4±0.05
0～0.03
KMD2
lStructure
ROHM : KMD2
JEDEC :JEITA : dot (year week factory)
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
Average rectified forward current
Io
IFSM
Forward current surge peak(60Hz･1cyc.)
Junction temperature
Tj
Storage temperature
Tstg
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF1
Forward voltage
VF2
Reverse current
IR
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Limits
30
20
0.5
5
125
Unit
V
V
A
A
C
C
-40 to +125
Min.
-
Typ.
-
1/4
Max.
0.36
0.47
100
Unit
V
V
μA
Conditions
IF=100mA
IF=500mA
VR=20V
2011.10 - Rev.A
Data Sheet
RB551SS-30
1
100000
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
10000
Tj=125°C
0.1
Tj=25°C
Tj=75°C
Tj=125°C
1000
Tj=75°C
100
10
0.01
Tj=25°C
1
0
100
200
300
400
500
600
700
0
5
10
15
20
25
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100
340
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
f=1MHz
10
IF=500mA
Tj=25°C
320
300
280
AVE:397.5mV
260
240
1
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
1000
100
AVE:45.7mA
f=1MHz
VR=0V
Tj=25°C
90
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(mA)
VR=20V
Tj=25°C
80
70
60
AVE:71.4pF
50
40
30
20
10
0
10
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
Data Sheet
RB551SS-30
30
20
IFSM
REVERSE RECOVERY TIME:trr(ns)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
25
8.3ms
20
1cyc.
15
10
AVE:13.6A
5
0
IF=0.1A
IR=0.1A
Irr=0.10×IR
Tj=25°C
15
10
AVE:6.7ns
5
0
IFSM DISPERSION MAP
trr DISPERSION MAP
100
100
IFSM
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms 8.3ms
1cyc
10
time
10
1
1
1
10
1
100
10
1000
0.4
0.3
100
Rth(j-c)
10
D.C.
D=1/2
Rth(j-a)
REVERSE POWER
DISSIPATION:PR (W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Sin(θ＝180)
0.2
0.1
On glass-epoxy substrate
soldering land 50mm□
1
0.001
0
0.01
0.1
1
10
100
1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
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0.2
0.4
0.6
0.8
1
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
3/4
2011.10 - Rev.A
0A
0V
0.9
t
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.8
T
Io
1
VR
0.9
D=t/T
VR=10V
Tj=125°C
0.7
D=1/2
0.5
Sin(θ＝180)
0.4
0.3
Io
0A
0V
VR
t
T
D.C.
D=t/T
VR=10V
Tj=125°C
0.8
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
1
0.6
Data Sheet
RB551SS-30
0.7
0.5
Sin(θ＝180)
0.4
0.3
0.2
0.2
0.1
0.1
0
D=1/2
0.6
0
0
25
50
75
100
125
0
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
25
50
75
100
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
125
30
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
AVE：18.5kV
20
15
10
AVE：1.84kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
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R1120A