〈Transistor〉 RT1N436X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE RT1N436X is a one chip transistor with built-in bias resistor,PNP type is RT1P436X. DRAWING RT1N436U UNIT:mm RT1N436C 1.6 0.4 FEATURE 2.5 0.8 0.4 0.5 1.5 0.5 ② 0.4 0.95 ③ ① 0.95 1.6 1.0 2.9 1.90 ② 0.3 0.5 ① 0.5 ・Built-in bias resistor (R1=4.7kΩ,R2=47kΩ). ③ APPLICATION C (OUT) R2 E (GND) 0.16 RT1N436M RT1N436S 0.425 4.0 1.25 0.425 ③ 1.0 0.1 1.0 ② 0.3 0.65 2.0 1.3 ③ ① 0.65 3.0 0.2 0.25 0.4 0.4 ② 0.8 Terminal Connector ①:Base ②:Emitter ③:Collector 2.1 1.2 0.8 ① 0.8 JEITA:SC-59 JEDEC:Similar to TO-236 Terminal Connector ①:Base ②:Emitter ③:Collector RT1N436T 0.2 0~0.1 JEITA:- JEDEC:- 14.0 B (IN) 0~0.1 Equivalent circuit R1 1.1 0.15 0.55 0.7 Inverted circuit,switching circuit,interface circuit, driver circuit. 0.45 0~0.1 2.5 0.4 0.15 0.7 0.45 0.9 1.27 1.27 JEITA:- JEDEC:- JEITA:SC-70 JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector Terminal Connector ①:Base ②:Emitter ③:Collector ISAHAYA ELECTRONICS CORPORATION ① ② ③ JEITA:- JEDEC:- Terminal Connector ①:Emitter ②:Collector ③:Base 〈Transistor〉 RT1N436X SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER VCBO VEBO VCEO I C I CM PC Tj Tstg Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N436T RT1N436U 125(※ ) +125 -55~+125 150 ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product RT1N436C RT1N436S 200 +150 -55~+150 TEST CONDITION I C=100μA,RBE=∞ VCB=50V,I E =0 VCE=5V,I C =10mA I C =10mA,I B =0.5mA VCE=0.2V,I C =5mA VCE=5V,I C =100μA VCE=6V,I E MIN 50 LIMIT TYP 80 0.4 3.3 8 =-10mA 0.3 1.4 0.8 0.6 4.7 10 200 6.1 12 1000 DC FORWARD CURRENT GAIN h FE INPUT ON VOLTEGE VI(ON)(V) VCE=0.2V 1 VCE=5V 100 10 0.1 100 1 10 COLLECTOR CURRENT IC(mA) C OL L EC TOR C U R R EN T V S. IN P U T OF F V OL TA GE COLLECTOR CURRENT I C(μA) 1000 VCE=5V 100 10 0 0.4 0.8 1.2 1.6 INPUT OFF VOLTAGE VI(OFF) (V) 2 ISAHAYA ELECTRONICS CORPORATION UNIT V μA - V V V kΩ MHz D C F OR W A R D C U R R EN T G A IN V S. C OL L EC TOR C U R R EN T 10 MAX 0.1 IN P U T ON V OL TA GE V S. C OL L EC TOR C U R R EN T 10 COLLECTOR CURRENT I C(mA) V V V mA mA mW ℃ ℃ 450 TYPICAL CHARACTERISTICS 1 UNIT (※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate. PARAMETER V(BR)CEO I CBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT RATING RT1N436M 50 6 50 100 200 100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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