INTEGRATED CIRCUITS SA647 Low-voltage digital IF receiver Product specification 1998 Aug 10 Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 DESCRIPTION APPLICATIONS The SA647 is a low-voltage high performance monolithic digital system with high-speed RSSI incorporating a mixer, oscillator with buffered output, two limiting intermediate frequency amplifiers, fast logarithmic received signal strength indicator (RSSI), voltage regulator, RSSI op amp and power down pin. The SA647 is available in TSSOP (thin shrink small outline package). • NADC (North American Digital Cellular) • Digital receiver systems • Cellular radio The SA647 was designed for portable digital communication applications and will function down to 2.7V. The limiter amplifier has differential outputs with 2MHz small signal bandwidth. The RSSI output has access to the feedback pin. This enables the designer to level adjust the outputs or add filtering. PIN CONFIGURATION FEATURES • VCC = 2.7 to 5.5V • Low power receiver (5.3mA @ 3V) • Power down mode (ICC = 110µA) • Fast RSSI rise and fall times • Extended RSSI range with temperature compensation • RSSI op amp • 2MHz limiter small signal bandwidth • Filter matching (1.5kΩ) • Differential limiter output • Oscillator buffer • TSSOP-20 package RFIN+ 1 20 MIXOUT RFIN– 2 19 IF AMP DECOUP OSC E 3 18 IF AMPIN OSC B 4 17 IF AMPDECOUP OSCBUF OUT 5 16 IF AMPOUT VCC 6 15 GND RSSI 7 14 LIMIN RSSI FB 8 13 LIMDECOUP PD 9 12 LIMDECOUP LIM OUT (-) 10 11 LIM OUT (+) SR01456 Figure 1. Pin Configuration TEMPERATURE RANGE ORDER CODE DWG # –40 to +85°C SA647DH SOT360–1 ORDERING INFORMATION DESCRIPTION 20-Pin Plastic Thin Shrink Small Outline Package (Surface-mount) 20 19 18 17 16 15 14 13 12 11 GND IF AMP LIMITER MIXER OSCILLATOR FAST RSSI + – POWER DOWN + – E 1 2 3 B 4 VCC 5 6 7 8 9 10 SR01727 Figure 2. 1998 Aug 10 Block Diagram 2 853–2037 19849 Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 PIN DESCRIPTION PIN NO. SYMBOL FUNCTION 1 RFIN RF input 2 RF BYPASS RF bypass 3 OSCE Oscillator emitter 4 OSCB Oscillator base (input) 5 OSCBUFOUT Oscillator buffer output 6 VCC Supply voltage 7 RSSI RSSI output 8 RSSI FB RSSI Feedback 9 PD Power Down 10 LIMOUT(–) Limiter output (neg) 11 LIMOUT(+) Limiter output (pos) 12 LIMDECOUP Limiter decoupling 13 LIMDECOUP Limiter decoupling 14 LIMIN Limiter input 15 GND Ground 16 IF AMPOUT IF amplifier output 17 IF AMPDECOUP IF amplifier decoupling 18 IF AMPIN IF amplifier input 19 IF AMPDECOUP IF amplifier decoupling 20 MIXOUT Mixer output 1998 Aug 10 3 Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VCC Supply voltage VIN Voltage applied to any other pin TSTG TA RATING UNITS -0.3 to +6.0 V -0.3 to (VCC + 0.3) V Storage temperature range -65 to +150 Operating ambient temperature range -40 to +85 °C °C NOTE: Thermal impedance (θJA) = 135°C/W DC ELECTRICAL CHARACTERISTICS VCC = +3.0V, TA = 25°C; unless otherwise stated. SYMBOL PARAMETER VCC Power supply voltage range ICC DC current drain TEST CONDITIONS LIMITS MIN TYP 2.7 4 5.3 MAX 5.5 V 7 mA Standby Pin 9 = LOW Input current Pin 9 = LOW -10 10 Pin 9 = HIGH -10 10 Pin 9 = LOW 0 0.3VCC Pin 9 = HIGH 0.7 VCC VCC Input level UNITS 0.11 mA µA V τon Power–up time RSSI valid (10% to 90%) 10 sec τoff Power–down time RSSI valid (90% to 10%) 5 sec 1998 Aug 10 4 Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 AC ELECTRICAL CHARACTERISTICS VCC = +3.0V, Mixer input freq = 110.52MHz, LO input freq = 109.92MHz, TA = 25°C; unless otherwise stated. SYMBOL PARAMETER TEST CONDITIONS LIMITS MIN TYP MAX UNITS Mixer/Osc section fIN Input signal frequency fOSC Crystal oscillator frequency NF Noise figure at 110.52MHz IIP3 200 MHz 200 MHz Matched input and output 50Ω 4.5 dB Third-order input intercept point Matched input and output to 50Ω -29.5 dBm GCP Conversion power gain Matched input and output to 50Ω RIN Mixer input resistance at 110.52 MHz 670 Ω CIN Mixer input capacitance at 110.52 MHz 3.0 pF ROUT Mixer output resistance at 600 kHz 1.5 kΩ ISOL Mixer RF to LO isolation 32 dB Buffered LO output level, DC coupled 17 20 230 23 320 dB 10kII3.9pF load 110 External input level f = 110.52 MHz at Pin 4 250 mVP–P IF amp power gain Matched input and output 50W 30 36 51 60 dB 2 MHz Input power level = -113dBm, Pin 1 0.30 V Input power level = -68dBm, Pin 1 1.00 V Input power level = -29dBm, Pin 1 1.55 V 85 dB mVP–P IF section Limiter power gain IFBW IF amp bandwidth RSSI output RSSI range ±1.5 dB 30 mVP–P 5 µs 25 µs IF input impedance 1.5 kΩ IF output impedance 1.5 kΩ Limiter input impedance 1.5 kΩ 230 Ω RSSI accuracy RSSI ripple RSSI speed – (Rise Time) Input @ Pin 1 No filter RSSI speed – (Fall time) Input @ Pin 1 No filter Limiter output impedance (Pin 10, Pin 11) Limiter output (each pin) Output load is 1.5K in parallel with 30 pF to GND each pin Limiter output DC level Differential output matching Limiter output offset 1998 Aug 10 dB 5 240 350 420 mVP–P 1.27 V ±5 mV 0.09 V Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 CIRCUIT DESCRIPTION RSSI The received signal strength indicator provides a linear voltage indication of the received signal strength in dB for a typical range of 85dB. The response time to a change in input signal is less than a few microseconds and the delay is kept to a minimum because of the use of a minimum phase shift circuit. Because of the speed of the RSSI circuit, the RSSI rise and fall time will be dominated by the bandwidth of the external bandpass filter that is placed between the mixer and the IF. Since the RSSI function requires the signal to propagate through the whole IF strip, and the rise and fall time of the filters are inversely proportional to their bandwidth, there is a trade-off between channel selectivity and RSSI response. Therefore, it is recommended that all channel selection filters be placed before the IF strip, just after the mixer. This will make the delay of the RSSI independent of the mixer input signal amplitude. Also, a 6dB insertion loss between the IF and limiter sections (Pins 16 and 14) will give optimum flatness of RSSI versus mixer input signal. Mixer The mixer has a single–ended input. The input impedance is 670Ω in parallel with a 3.0pF cap at 110.52MHz RF. The mixer output can drive a 1500Ω ceramic filter without any matching required. Oscillator and Buffer The on-board oscillator supplies the signal for the mixer down-conversion. The internally biased transistor can be configured as a Colpitts or Butler overtone crystal oscillator. The transistor’s bias current can be increased if desired by adding a shunt resistor from Pin 3 to ground. The oscillator’s buffered output (Pin 5) can be used as a feedback signal to lock the oscillator to an appropriate reference. IF Amplifier and IF Limiter The IF strip provides more than 96dB of power gain for the down converted signal. Its bandwidth is 2MHz. The input and output impedance of the IF amplifier and the input impedance of the IF limiter are set to 1500Ω. A second filter is connected between the IF amplifier and the limiter for improved channel selectivity and reduced instability. The overall gain can be reduced if desired by adding an external attenuator after the IF amplifier The differential limiter outputs (Pins 10 and 11) are available for demodulator circuits. 1998 Aug 10 The RSSI curve is temperature compensated and in addition is designed for improved consistency from unit to unit. DC Power Supply The IC is designed for operation between 2.7 and 5.5V. A power supply dependent biasing scheme is used in the mixers to benefit from the large headroom available at higher VCCs. 6 Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 PERFORMANCE CHARACTERISTICS VCC = +3.0V, Mixer input freq = 110.52MHz, LO input freq = 109.92MHz, TA = 25°C; unless otherwise stated. Supply Current vs Temperature and Supply Voltage Mixer 3rd Order Intercept and Compression vs Input Power 7.00 0 6.50 –10 5.5V Output Power (dBm) Current (mA) 6.00 3.8V 5.50 5.00 3.0V 4.50 2.7V 4.00 –20 Fund. Product –30 –40 –50 –60 3rd Order Product –70 –80 3.50 –90 3.00 –100 –40 0 25 70 –75 85 –70 –65 –60 Mixer Gain vs Temperature and Supply Voltage –50 –45 –40 –35 –30 –25 Mixer 3rd Order Input Intercept Point vs Temperature and Supply Voltage 24.0 –25 23.0 –26 22.0 5.5V 21.0 –27 3.0V IP3 (dBm) Gain (dB) –55 Input Power (dBm) Temperature (°C) 20.0 19.0 2.7V 18.0 –28 2.7V –29 3.0V –30 5.5V 17.0 –31 16.0 –32 15.0 –40 0 25 Temperature (°C) 70 –33 –40 85 Mixer Noise Figure vs Temperature and Supply Voltage 25 Temperature (°C) 70 85 Mixer 1dB Input Compression vs Temperature and Supply Voltage –36 Compression (dBm) 5.5 Noise Figure (dB) 0 5.0 5.5V 4.5 3.0V 2.7V 4.0 –37 –38 2.7V 3.0V –39 –40 5.5V –41 –42 3.5 –40 0 25 Temperature (°C) 70 –40 85 25 Temperature (°C) 70 85 LO Buffer Output vs Temperature and Supply Voltage LO Buffer Output with Load Variation 310 LO Buffer Output (mVp–p) 550 500 LO Output (mVp–p) 0 5.1KW 450 400 350 10KW 300 250 200 Load = 10KW 3.9pF 290 5.5V 270 250 3.0V 230 210 2.7V 190 170 150 150 100 0 1 2.2 3 3.9 Capacitor Load (pF) 4.7 –40 5.6 0 25 70 85 Temperature (°C) SR01554 Figure 3. 1998 Aug 10 7 Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 IF Gain vs Temperature and Supply Voltage IF Bandwidth vs. Temperature 38.5 3.4 38.0 3.2 37.5 3.0 Gain (dB) Bandwidth (MHz) 5.5V 2.8 2.6 3.0V 37.0 36.5 2.4 36.0 2.2 35.5 2.7V 35.0 2.0 –40 0 25 70 –40 85 0 25 Temperature (°C) Temperature (°C) 85 Limiter Bandwidth vs Temperature Limiter Output Offset vs Temperature and Supply Voltage 2.8 0.14 0.13 2.6 0.11 Bandwidth (MHz) 0.12 Offset (Volt) 70 5.5V 0.10 0.09 3.0V 0.08 2.4 2.2 2.0 2.7V 0.07 1.8 0.06 0.05 1.6 –40 0.04 –40 0 25 Temperature (°C) 70 0 25 85 70 85 Temperature (°C) Limiter Output vs Temperature and Supply Voltage Limiter Gain vs Temperature and Supply Voltage 65.0 450 64.5 400 5.5V 63.5 63.0 Output (mVp–p) Gain (dB) 64.0 3.0V 62.5 62.0 2.7V 61.5 5.5V 350 3.0V 300 2.7V 250 61.0 60.5 200 60.0 25 70 Temperature (°C) –40°C 85 –40 0 1.60 25°C 5.5V 1.40 RSSI (Volt) 1.2 RSSI (Volt) 85 1.80 1.4 1.0 0.8 0.6 1.20 1.00 0.80 3.0V 0.60 85°C 0.40 –40°C 0.2 0.0 –118 70 RSSI vs Supply Voltage RSSI vs Temperature 1.6 0.4 25 Temperature (°C) 2.7V 0.20 –108 –98 –88 –78 –68 –58 –48 –38 0.00 –28 –118 RF Input (dBm) –108 –98 –88 –78 –68 RF Input (dBm) –58 –48 –38 –28 SR01555 Figure 4. 1998 Aug 10 8 Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 GENERAL TEST CIRCUIT DESCRIPTION IF OR LIMITER INPUT FLT R29 2 4 5 3 LIMITER OUT (+) R27 R13 1 R26 C19 R19 R18 MIXER OUT R25 R22 R17 C25 R20 C27 R15 R16 C26 C17 18 IF DEC IF IN 17 16 15 14 LIM IN 19 IF DEC 20 MX OUT C23 GND 13 12 11 LIM DEC LIM DEC IF AMP MIXER C15 C16 LIMITER FAST RSSI RF BYPASS 2 3 – VCC OSC B OSC E RF IN 1 + 4 5 6 RSSI OUT OSC BUFF + – 7 8 9 LIM OUT – OSCILLATOR POWER DOWN C28 R11 C21 C24 R30 LIM OUT+ R24 C18 IF OUT R23 R21 C14 R14 C20 L3 C22 RSSI FB R28 10 R9 C1 C10 C9 L1 C7 C4 C11 C13 R7 C2 R8 PWD R1 R4 L2 R5 R6 C12 C3 C5 R3 R10 RSSI OUT C8 C14 VCC C6 LO BUFFER OUTPUT R2 LIMITER OUT (–) RF INPUT LO INPUT Automatic Test Circuit Component List C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 0.01mF 12pF 39pF 0.01mF 15pF 39pF 3.9pF 0.1mF 100nF 100nF C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 100nF 100nF 30pF 0.1mF 30pF 100nF 100nF 0.1mF 270pF 1500pF C21 C22 C23 C24 C25 C26 C27 C28 0.01mF 0.1mF 100nF 0.1mF 0.1mF 100nF 0.1mF 0.1mF R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 249W 60.4W 60.4W 10KW 10KW 10KW 10KW 10KW 10KW 1.5KW 1.5KW 1.69KW R13 50W R14 13.7W R15ą1.5KW R16 1.5KW R17 1KW R18 13.7KW R19 50KW R20 1.69KW R21 2.43KW R22 50W R23 130W R24 R25 R26 R27 R28 R29 R30 8.66W 130W 182W 182W 10KW 10KW 3.92KW L1 L2 L3 FLT 120nH 120nH 56mH 600kHz SR01728 Figure 5. 1998 Aug 10 9 Philips Semiconductors Product specification Low-voltage digital IF receiver PIN PIN DC V No. MNEMONIC SA647 PIN PIN DC V No. MNEMONIC EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT 400 1 RF IN +2.35 VREF 6 6 30K VCC +3.00 BANDGAP RF IN 1 26 RF 2 BYPASS RF BYPASS +1.56 2 VCC RSSI 7 OSC 3 E OUT +0.20 + 7 — 18k +2.21 4 MIX VCC 3 OSC 4 B +2.78 150µA RSSI 8 FEEDBACK +0.20 8 — + OSC 5 BUFFER +2.21 R POWER 9 5 DOWN +2.00 9 R 150µA SR01729 Figure 6. 1998 Aug 10 10 Philips Semiconductors Product specification Low-voltage digital IF receiver PIN PIN DC V No. MNEMONIC SA647 EQUIVALENT CIRCUIT PIN PIN DC V No. MNEMONIC EQUIVALENT CIRCUIT 10 LIMITER OUT IF +1.25 16 11 11 AMP OUT DECOUP 16 6.6k IF AMP +1.28 17 DECOUP +1.28 14 18 LIMITER 13 1.31k 8.8k LIMITER 12 +1.28 COUPLING IF 1.5k +1.28 18 AMP IN 1.5k +1.28 50µA 50µA 12 17 13 19 LIMITER 14 IN IF AMP +1.28 19 DECOUP +1.28 1.87k 20 MIXER 15 GND 0 20 OUT +2.03 SR00509 Figure 7. 1998 Aug 10 11 Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 GENERAL APPLICATIONS CIRCUIT FLT1 FLT2 R11 R15 R16 R14 R10 24 53 1 R12 24 53 1 R9 R7 R17 R18 R19 R6 R13 R8 C24 C23 L3 C20 C22 C19 C18 C16 C17 C21 C25 20 19 18 17 16 15 14 13 12 11 GND IF AMP LIMITER MIXER RSSI OSCILLATOR RSSI BUFF R5 LO BUFF 1 2 3 C4 4 5 RSSI FB + – + – 6 7 8 9 10 C8 C5 C9 C1 C11 C13 R2 C2 L2 RF INPUT R1 L1 C7 C15 R3 C6 R4 C3 C10 LO INPUT C12 C14 OSC OUT VCC RSSI POWER LIMITER DOWN OUT(–) LIMITER OUT(+) Component List C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 5–30pF 5–30pF 0.1mF 0.1mF 0.1mF 0.1mF 47pF 1nF 10pF 3.9pF C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 0.1mF 6.8pF 0.1mF 30pF 30pF 0.1mF 0.1mF 0.1mF 10nF 1500pF C21 C22 C23 C24 C25 10nF 0.1mF 0.1mF 10nF 10nF R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 10KW 0W (short) OPEN 5.1k 5.1k 0W (short) 1.5KW 1.5KW 180W 180W 10KW 0KW R13 R14 R15 R16 R17 R18 R19 240W 4.5KW 180W 180W 240W 10KW 10KW NOTE: R2 and R3 set the RSSI buffer gain. For unity gain short R2 (Pin 7 to Pin 8) and leave R9 open. Figure 8. 1998 Aug 10 12 L1 180nH L2 180nH L3 56mH FLT1,2 600kHz SR01730 Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 TSSOP20: plastic thin shrink small outline package; 20 leads; body width 4.4 mm 1998 Aug 10 13 SOT360-1 Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 Data sheet status Data sheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued datasheet before initiating or completing a design. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Copyright Philips Electronics North America Corporation 1998 All rights reserved. Printed in U.S.A. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 Date of release: 08-98 Document order number: 1998 Aug 10 14 9397 750 04241