Equivalent circuit 2 (4kΩ) SAH03 Silicon PNP Epitaxial Planar Transistor with Fast-Recovery Rectifier Diode 1 External Dimensions PS Pack SAH03 Unit –60 V ICBO VCEO –60 V IEBO VEBO –6 V V(BR)CEO IC –1.2 A hFE VCE=–4V, IC=–1A IB –0.1 A VCE(sat) IC=–1A, IB=–2mA –1.4max V PC 1.0(Ta=25°C) W fT VCE=–12V, IE=0.1A 100typ MHz 8.0±0.5 Tj 150 °C COB VCB=–10V, f=1MHz 30typ pF 6.3±0.2 –40to+150 °C VR IR=100µA 100 min V VF IF=0.5A 1.5 max V trr IF=±100mA 100 typ ns Unit –10max µA –3max mA 4 a b 1 2000 to 12000 1.4±0.2 3.6±0.2 6.8max 4.0max 0.3 +0.15 -0.05 0.89±0.15 V –60min 0.75 +0.15 -0.05 VEB=–6V IC=–10mA 2 3 2.54±0.25 SAH03 VCB=–60V 0.25 Tstg Conditions 4.32±0.2 (Ta=25°C) VCBO Symbol 0~0.1 1.0±0.3 Weight : Approx 0.23g a. Type No. b. Lot No. 3.0±0.2 9.8±0.3 –1 –2 –3 –4 –5 0.01 –6 0 12 1000 t on Transient Thermal Resistance DC Curr ent Gain h FE tf 5˚C ˚C 25 500 –3 0˚C 100 –1 50 –0.02 –2.4 –0.05 –0.1 V CE (sat) – I B Temperature Characteristics (Typical) –0.5 –1 –2.4 mp) 10 1 0.3 0.001 0.01 0.1 1 10 1 00 1000 Time t(ms) P c – T a Derating 1.5 –3 10 125˚C –3 100 Safe Operating Area (Single Pulse) (I C =–0.5A) –2 300 Collector Current I C (A) Collector Current I C (A) 0µ Ma xim um Powe r Dissipat io n P C (W) s –1 s –30˚C ms –2 1m 10 25˚C Collector Curr ent I C (A) t on • t st g• t f ( µ s) 5000 0.5 Collecto r-Emitte r Satu ration Vo lt age V C E( s a t ) ( V) Swit ching Time V C C 30V –I B1 =I B2 =2mA 1 –3 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 2 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 0.1 –0.2 0 1.6 Forward Voltage V F (V) t on •t stg •t f – I C Characteristics (Typical) t stg ) 125 1 Collector-Emitter Voltage V C E (V) θ j- a (˚C /W) 0 –1 0˚ C 2 5 ˚C 125 0 ˚C ( Cas I B =–0.3m A –1 e Te 0.05 mp) 0.1 (Cas –0 .4m A –1 emp A –2 e Te – 0 .5 m 0.5 (V C E =–4V) –30˚C 0 .6 m A –2.4 ˚C Collector Current I C (A) – Forward Current I F (A) –0 .8 m A –2 1.2 1 eT –1 .0 m A I C – V BE Temperature Characteristics (Typical) (Cas –2.4 Di od e I F – V F Characteristics –1.2mA Collector Current I C (A) –5.0mA –10.0mA –2.0mA 25˚C I C – V CE Characteristics (Typical) 3 Application : Voltage change switch for motor ■Electrical Characteristics Symbol (100Ω) 4.8max ■Absolute maximum ratings (Ta=25°C) 4 –1 –0.5 Without Heatsink Natural Cooling –0.1 0 –0.1 –0.5 –1 Base Current I B (mA) –5 –0.05 –1 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 1.0 0.5 Glass epoxy substrate (95 x 69 x 1.2mm) Natural Cooling 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 163