VISHAY SI2320DS

Si2320DS
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
VDS (V)
rDS(on) ()
ID (A)
200
7 @ VGS = 10 V
0.28
TO-236
(SOT-23)
G
1
S
2
3
D
Top View
Si2320DS (D0)*
*Marking Code
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150C)a
TA= 25C
TA= 70C
Pulsed Drain Currentb
ID
Avalanche Currentb
L = 0.1 mH
Single Avalanche Energy
Continuous Source Current (Diode Conduction)a
TA= 25C
Power Dissipationa
TA= 70C
Operating Junction and Storage Temperature Range
V
0.28
0.22
0.22
0.17
0.5
IDM
Unit
A
IAS
0.5
EAS
0.013
mJ
IS
1
A
PD
1.25
0.75
0.80
0.48
W
TJ, Tstg
C
–55 to 150
Parameter
Maximum Junction-to-Ambienta
Symbol
t 5 sec
Steady State
Maximum Junction-to-Foot
Steady State
RthJA
RthJF
Typical
Maximum
75
100
120
166
40
50
Unit
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
www.vishay.com FaxBack 408-970-5600
2-1
Si2320DS
New Product
Vishay Siliconix
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 1 mA
200
VGS(th)
VDS = VGS, ID = 250 mA
2
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 160 V, VGS = 0 V
1
VDS = 160 V, VGS = 0 V, TJ = 70C
75
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
V
On-State Drain Currenta
ID(on)
VDS w 15 V, VGS = 10 V
Drain-Source On-Resistancea
rDS(on)
VGS = 10 V, ID = 0.2 A
5.8
gfs
VDS = 15 V, ID = 0.4 A
13
VSD
IS = 1 A, VGS = 0 V
Forward Transconductancea
Diode Forward Voltage
nA
mA
0.5
A
W
7
S
1.2
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
1.1
1.6
Gate-Drain Charge
Qgd
0.375
td(on)
6
10
VDD = 100 V
V,, RL = 500 W
0 2 A,
A VGEN = 10 V
ID ^ 0.2
V, RG = 6 W
9
15
9
15
65
100
IF = 1 A, di/dt = 100 A/ms
105
160
0.31
VDS = 100 V,
V VGS = 10 V,
V ID = 0.2
02A
nC
C
Switching
Turn-On Delay Time
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall-Time
tf
Source-Drain Reverse Recovery Time
trr
ns
ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Output Characteristics
Transfer Characteristics
1.0
1.0
VGS = 10, 9 V
8V
0.8
I D – Drain Current (A)
I D – Drain Current (A)
0.8
7V
0.6
0.4
6V
0.2
0.4
TC = 125C
0.2
4, 3 V
25C
5V
0
–55C
0
0
2
4
6
8
VDS – Drain-to-Source Voltage (V)
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2-2
0.6
10
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
Si2320DS
New Product
Vishay Siliconix
Capacitance
On-Resistance vs. Drain Current
70
60
10
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
12
8
VGS = 10 V
6
4
Ciss
50
40
30
20
Coss
2
10
0
Crss
0
0
0.2
0.4
0.6
0.8
0
1.0
20
ID – Drain Current (A)
80
100
On-Resistance vs. Junction Temperature
Gate Charge
2.5
VDS = 100 V
ID = 0.2 A
r DS(on) – On-Resistance ()
(Normalized)
V GS – Gate-to-Source Voltage (V)
60
VDS – Drain-to-Source Voltage (V)
20
16
12
8
4
VGS = 10 V
ID = 0.2 A
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
0
–50
2.0
–25
0
Qg – Total Gate Charge (nC)
25
50
75
100
125
150
TJ – Junction Temperature (C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
r DS(on) – On-Resistance ( )
10
I S – Source Current (A)
40
1
TJ = 150C
0.1
TJ = 25C
0.01
16
ID = 0.2 A
12
8
4
0
0.001
0
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Document Number: 71084
S-63640—Rev. A, 01-Nov -98
1.2
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
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2-3
Si2320DS
New Product
Vishay Siliconix
Threshold Voltage
Single Pulse Power
0.9
60
50
ID = 250 mA
Power (W)
V GS(th) Variance (V)
0.6
0.3
40
TA = 25C
30
0.0
20
–0.3
10
–0.6
–50
0
–25
0
25
50
75
100
125
150
0.01
1
0.1
TJ – Temperature (C)
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 166C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
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2-4
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71084
S-63640—Rev. A, 01-Nov -98