Si1905DL New Product Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET VDS (V) –8 8 rDS(on) () ID (A) 0.600 @ VGS = –4.5 V 0.60 0.850 @ VGS = –2.5 V 0.50 1.200 @ VGS = –1.8 V 0.42 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QB XX YY S1 Lot Traceability and Date Code Part # Code Top View Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS –8 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150C) 150 C)a TA = 25C ID TA = 85C Pulsed Drain Current IS TA = 25C Maximum Power Dissipationa TA = 85C Operating Junction and Storage Temperature Range PD V 0.60 0.57 0.43 0.41 A 1.0 IDM Continuous Diode Current (Diode Conduction)a Unit –0.25 –0.23 0.30 0.27 0.16 0.14 W TJ, Tstg C –55 to 150 Parameter Maximum Junction-to-Ambienta Symbol t 5 sec Steady State Maximum Junction-to-Foot (Drain) Steady State RthJA RthJF Typical Maximum 360 415 400 460 300 350 Unit C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71082 S-99188—Rev. A, 01-Nov-99 www.vishay.com FaxBack 408-970-5600 2-1 Si1905DL New Product Vishay Siliconix Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Voltagea "100 VDS = –6.4 V, VGS = 0 V –1 VDS = –6.4 V, VGS = 0 V, TJ = 85C –5 VDS = –5 V, VGS = –4.5 V –1.0 nA mA A VGS = –4.5 V, ID = –0.57 A 0.51 0.600 VGS = –2.5 V, ID = –0.48 A 0.720 0.850 VGS = –1.8 V, ID = –0.20 A 1.0 1.200 gfs VDS = –10 V, ID = –0.57 A 1.2 VSD IS = –0.23 A, VGS = 0 V –0.8 –1.2 1.5 2.3 VDS = –4 4 V, V VGS = –4.5 45V V, ID = –0.57 0 57 A 0.17 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V ID(on) a D i S Drain-Source On-State O S Resistance R i V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 6 12 tr 25 50 10 20 10 20 20 40 Rise Time Turn-Off Delay Time VDD = –4 4V V,, RL = 8 W ID ^ –0.5 0 5 A, A VGEN = –4.5 45V V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC C 0.16 IF = –0.23 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Output Characteristics Transfer Characteristics 1.0 1.0 VGS = 5 thru 2.5 V TC = –55C 2V 0.8 I D – Drain Current (A) I D – Drain Current (A) 0.8 0.6 1.5 V 0.4 0.2 25C 125C 0.6 0.4 0.2 1V 0 0 0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) www.vishay.com FaxBack 408-970-5600 2-2 3.0 0 0.5 1.0 1.5 2.0 2.5 VGS – Gate-to-Source Voltage (V) Document Number: 71082 S-99188—Rev. A, 01-Nov-99 Si1905DL New Product Vishay Siliconix Capacitance On-Resistance vs. Drain Current 160 1.5 C – Capacitance (pF) r DS(on) – On-Resistance ( ) 2.0 VGS = 1.8 V 1.0 VGS = 2.5 V VGS = 4.5 V 0.5 Ciss 120 80 Coss 40 0 Crss 0 0 0.2 0.4 0.6 0.8 1.0 0 2 ID – Drain Current (A) 6 8 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 5 1.6 VDS = 4 V ID = 0.57 A r DS(on) – On-Resistance () (Normalized) V GS – Gate-to-Source Voltage (V) 4 4 3 2 1 VGS = 4.5 V ID = 0.57 A 1.4 1.2 1.0 0.8 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 –50 1.6 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 r DS(on) – On-Resistance ( ) I S – Source Current (A) 1 TJ = 150C TJ = 25C 1.5 ID = 0.57 A 1.0 0.5 0 0.1 0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71082 S-99188—Rev. A, 01-Nov-99 1.2 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) www.vishay.com FaxBack 408-970-5600 2-3 Si1905DL New Product Vishay Siliconix Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 30 20 0.0 10 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 0 10–3 10–2 10–1 TJ – Temperature (C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA =400C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 www.vishay.com FaxBack 408-970-5600 2-4 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71082 S-99188—Rev. A, 01-Nov-99