VISHAY SI4702DY

Si4702DY
Vishay Siliconix
Load Switch with Level-Shift
PRODUCT SUMMARY
VDS2 (V)
30
rDS(on) (W)
ID (A)
0.024 @ VGS2 = 10 V
5.5
0.035 @ VGS2 = 4.5 V
4.5
5, 6, 7
3, 4
VIN
SO-8
S1
1
8
VHV
VON/OFF
2
7
VIN
S2
3
6
VIN
S2
4
5
VIN
VHV
VON/OFF
S2
Q2
8
Q1
2
1
Top View
Ordering Information: Si4702DY
Si4702DY-T1 (with Tape and Reel)
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Input Voltage
Q2 Gate-Drive Voltage Referenced to S1 or S2
ON/OFF Voltage
Continuousa
Load Current
Pulsed b
Continuous Intrinsic Diode Conductiona
Symbol
Limit
VIN
30
VHV
20
VON/OFF
8
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 W)
V
5.5
IL
"20
IS
Maximum Power Dissipationa
Unit
A
- 1.15
PD
1.25
W
TJ, Tstg
- 55 to 150
_C
ESD
3
kV
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambient (t = steady state)a
RthJA
83
100
Maximum Junction-to-Foot (Q2)
RthJC
25
30
Unit
_C/W
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Reverse Leakage Current
IFL
VIN = 30 V, VON/OFF = 0 V, VHV = 0 V
Diode Forward Voltage
VSD
IS = - 1.15 A
Min
Typ
Max
Unit
OFF Characteristics
1
mA
0.7
1
V
VON/OFF = 0 V, ID = 5.5 A, VHV = 10 V, VS2 = 0 V
0.019
0.024
VON/OFF = 0 V, ID = 4.5 A, VHV = 4.5 V, VS2 = 0 V
0.028
0.035
ON Characteristics
On Resistance (Q2)
On-Resistance
On-State (Q2) Drain-Current
rDS(on)
DS( )
ID(on)
VIN - VOUT v 0.1 V, VIN = 5 V, VON/OFF = 0 V VHV = 10 V
15
W
A
Notes
a. Surface Mounted on FR4 Board.
b. Pulse test: pulse width v300 ms, duty cycle v2%.
Document Number: 71293
S-31874—Rev. E, 15-Sep-03
www.vishay.com
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Si4702DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
VDS vs. ID
1.0
VON/OFF = 0 V
VHV = 10 V
VS2 = 0 V
VON/OFF = 0 V
VHV = 4.5 V
VS2 = 0 V
1.6
(V)
0.6
TJ = 125_C
V DS
V DS
(V)
0.8
VDS vs. ID
2.0
0.4
1.2
TJ = 125_C
0.8
TJ = 25_C
TJ = 25_C
0.2
0.4
0.0
0.0
0
6
12
18
24
30
0
6
12
ID - (A)
(V)
0.06
V DS
(V)
V DS
VON/OFF = 0 V
IDS = 5 A
VS2 = 0 V
0.4
TJ = 125_C
0.04
0.3
TJ = 125_C
0.2
0.1
0.02
TJ = 25_C
TJ = 25_C
0.0
0.00
0
3
6
9
0
12
3
VHV - (V)
r DS(on) - On-Resistance (W)
(Normalized)
r SS(on) - On-Resistance ( W )
TJ = 125_C
0.04
0.02
0.00
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VHV - (V)
9
1.6
VON/OFF = 0 V
IDS = 1 A
VS2 = 0 V
VIN = 10 V
1.4
VHV = 4.5 V
1.2
1.0
0.8
TJ = 25_C
3
12
Normalized On-Resistance vs. Junction Temperature
0.06
0
9
1.8
VON/OFF = 0 V
IDS = 1 A
VS2 = 0 V
0.08
6
VHV - (V)
rDS vs. VHV
0.10
2
30
VDS vs. VHV
0.5
VON/OFF = 0 V
IDS = 1 A
VS2 = 0 V
0.08
24
ID - (A)
VDS vs. VHV
0.10
18
12
0.6
- 50
- 25
0
25
50
75
100 125
TJ - Junction Temperature (_C)
150
Document Number: 71293
S-31874—Rev. E, 15-Sep-03
Si4702DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
td(on) Variation with RG/VIN
20
VON/OFF = 2 V
VHV = 12 V
Co = 10 mF
IL = 1 A
VIN = 5 V
12
VON/OFF = 2 V
VHV = 12 V
Co = 10 mF
IL = 1 A
24
Time ( mS)
Time ( mS)
16
trise Variation with RG/VIN
30
VIN = 3.3 V
8
4
18
VIN = 3.3 V
VIN = 5 V
12
6
0
0
10
30
50
70
90
110
10
30
50
RG (kW)
td(off) Variation with RG/VIN
0.40
70
90
110
90
110
RG (kW)
tf Variation with RG/VIN
120
VIN = 5 V
100
0.32
80
Time ( mS)
Time ( mS)
VIN = 5 V
0.24
VIN = 3.3 V
0.16
60
40
VON/OFF = 2 V
VHV = 12 V
Co = 10 mF
IL = 1 A
0.08
VIN = 3.3 V
VON/OFF = 2 V
VHV = 12 V
Co = 10 mF
IL = 1 A
20
0
0.00
10
30
50
70
90
10
110
30
50
RG (kW)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
70
RG (kW)
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 83_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Dureation (sec)
Document Number: 71293
S-31874—Rev. E, 15-Sep-03
www.vishay.com
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Si4702DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (sec)
1
10
TYPICAL APPLICATION CIRCUIT
12 V
5, 6, 7
5-V BUS
3, 4
Q2
VIN
S2
8
RL
VHV
2
Q1
VON/OFF
1
S1
NOTE: Voltage difference between pull-up voltage, 12 V, and BUS voltage, 5 V, should be greater than 4.5 V.
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Document Number: 71293
S-31874—Rev. E, 15-Sep-03