Si4858DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.00525 @ VGS = 10 V 20 0.007 @ VGS = 4.5 V 17 APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 20 13 15 10 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID A 60 2.9 1.3 3.5 1.6 2.2 1 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 70690 S-03662—Rev. B, 14-Apr-03 www.vishay.com 1 Si4858DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) VDS w 5 V, VGS = 10 V V nA mA 30 A VGS = 10 V, ID = 20 A 0.0040 0.00525 VGS = 4.5 V, ID = 19 A 0.0055 0.007 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 90 Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 30.5 40 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance RG Turn-On Delay Time nC 13.5 9.5 1.4 2.4 td(on) 21 35 tr 10 20 83 130 27 45 50 80 Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 4.5 V, ID = 20 A 0.5 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 3V 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 30 20 TC = 125_C 10 0 0 40 5 0 0.0 25_C 0.5 1.0 1.5 2.0 2.5 - 55_C 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Document Number: 70690 S-03662—Rev. B, 14-Apr-03 Si4858DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 6500 0.008 5200 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.010 VGS = 4.5 V 0.006 VGS = 10 V 0.004 0.002 Ciss 3900 2600 Coss 1300 Crss 0.000 0 0 10 20 30 40 50 0 6 ID - Drain Current (A) 24 30 On-Resistance vs. Junction Temperature Gate Charge 1.8 VDS = 15 V ID = 20 A 8 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) 10 6 4 2 VGS = 10 V ID = 20 A 1.6 1.4 1.2 1.0 0.8 0 0 15 30 45 60 0.6 - 50 75 - 25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.020 r DS(on) - On-Resistance ( W ) 60 TJ = 150_C 10 TJ = 25_C 0.016 ID = 20 A 0.012 0.008 0.004 0.000 1 0.00 25 TJ - Junction Temperature (_C) Qg - Total Gate Charge (nC) I S - Source Current (A) 12 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 70690 S-03662—Rev. B, 14-Apr-03 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4858DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.6 60 ID = 250 mA 50 0.2 40 Power (W) V GS(th) Variance (V) 0.4 - 0.0 - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 - 2 10 - 1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 70690 S-03662—Rev. B, 14-Apr-03