Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET VDS (V) 20 rDS(on) () ID (A) 0.025 @ VGS = 4.5 V 7.1 0.035 @ VGS = 2.5 V 6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150C) 150 C)a TA = 25C ID TA = 70C Pulsed Drain Current (10 s Pulse Width) Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa V 7.1 5.7 IDM 40 IS 1.7 A 2 PD TA = 70C Operating Junction and Storage Temperature Range Unit W 1.3 TJ, Tstg –55 to 150 C Symbol Limit Unit RthJA 62.5 C/W Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70718 S-54939—Rev. A, 29-Sep-97 www.vishay.com FaxBack 408-970-5600 2-1 Si4966DY Vishay Siliconix Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 A 0.6 Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 IDSS VDS = 20 V, VGS = 0 V 1 Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V, TJ = 55C 5 Unit Static Gate Threshold Voltage On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) VDS w 5 V, VGS = 4.5 V V 20 0.019 0.025 VGS = 2.5 V, ID = 6.0 A 0.025 0.035 27 gfs VDS = 10 V, ID = 7.1 A Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V A A VGS = 4.5 V, ID = 7.1 A Forward Transconductancea nA S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs 25 VDS = 10 V, V VGS = 4 4.5 5V V, ID = 7.1 71 A Gate-Drain Charge Qgd 4 Turn-On Delay Time td(on) 40 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = 10 V V,, RL = 10 ID ^ 1 A, A VGEN = 4 4.5 5V V, RG = 6 IF = 1.7 A, di/dt = 100 A/s 50 nC C 6.5 60 40 60 90 150 40 60 40 80 ns Notes a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70718 S-54939—Rev. A, 29-Sep-97 Si4966DY Vishay Siliconix Output Characteristics Transfer Characteristics 40 40 VGS = 5 thru 3 V 2.5 V 30 I D – Drain Current (A) I D – Drain Current (A) 30 20 2V 10 20 TC = 125C 10 25C 1, 1.5 V –55C 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.10 4000 0.08 3200 C – Capacitance (pF) r DS(on)– On-Resistance ( ) 1.5 0.06 0.04 VGS = 2.5 V 0.02 Ciss 2400 1600 Coss 800 VGS = 4.5 V Crss 0 0 0 10 20 30 40 0 4 ID – Drain Current (A) 1.6 4 3 2 1 0 5 10 15 Qg – Total Gate Charge (nC) Document Number: 70718 S-54939—Rev. A, 29-Sep-97 16 20 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 7.1 A r DS(on)– On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 7.1 A 0 12 VDS – Drain-to-Source Voltage (V) Gate Charge 5 8 20 25 1.4 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si4966DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 40 r DS(on)– On-Resistance ( ) I S – Source Current (A) ID = 7.1 A 0.08 TJ = 150C 10 TJ = 25C 0.06 0.04 0.02 0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) Threshold Voltage 30 0.2 24 ID = 250 A 3 4 5 –0.2 Single Pulse Power 18 Power (W) V GS(th) Variance (V) 2 VGS – Gate-to-Source Voltage (V) 0.4 –0.0 1 12 –0.4 6 –0.6 –50 –25 0 25 50 75 100 125 0 0.01 150 0.10 TJ – Temperature (C) 1.00 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 62.5C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 S www.vishay.com FaxBack 408-970-5600 2-4 10–1 W P l D ti 1 ( 10 30 ) Document Number: 70718 S-54939—Rev. A, 29-Sep-97