Si5404DC Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 7.2 0.045 @ VGS = 2.5 V 5.9 D 1206-8 ChipFETr 1 D D D D D D G G S Marking Code AB XX Lot Traceability and Date Code S Part # Code Bottom View N-Channel MOSFET Ordering Information: Si5404DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V 7.2 5.2 5.2 3.8 IDM 20 2.1 1.1 2.5 1.3 1.3 0.7 TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)b, c Unit A W _C 260 THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 40 50 80 95 15 20 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71057 S-31989—Rev. C, 13-Oct-03 www.vishay.com 1 Si5404DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS VDS = 0 V, VGS = "12 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85_C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea nA mA 20 VDS w 5 V, VGS = 4.5 V rDS(on) V A VGS = 4.5 V, ID = 5.2 A 0.025 0.030 VGS = 2.5 V, ID = 4.3 A 0.038 0.045 gfs VDS = 10 V, ID = 5.2 A 20 VSD IS = 1.1 A, VGS = 0 V 0.8 1.2 12 18 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.2 Turn-On Delay Time td(on) 20 30 40 60 40 60 15 23 30 60 Rise Time VDS = 10 V, VGS = 4.5 V, ID = 5.2 A tr Turn-Off Delay Time VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 2.4 IF = 1.1 A, di/dt = 100 A/ms nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 3 V 2.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 2V 4 12 8 TC = 125_C 4 25_C - 55_C 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Document Number: 71057 S-31989—Rev. C, 13-Oct-03 Si5404DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 1800 0.05 1500 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.06 VGS = 2.5 V 0.04 0.03 VGS = 4.5 V 0.02 Ciss 1200 900 600 0.01 300 0.00 0 Coss Crss 0 4 8 12 16 20 0 4 ID - Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 5.2 A 5 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 12 VDS - Drain-to-Source Voltage (V) 6 4 3 2 VGS = 4.5 V ID = 5.2 A 1.4 1.2 1.0 0.8 1 0 0 3 6 9 12 0.6 - 50 15 - 25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.06 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ - Junction Temperature (_C) 20 I S - Source Current (A) 8 0.05 ID = 5.2 A 0.04 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71057 S-31989—Rev. C, 13-Oct-03 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si5404DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA - 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 30 20 10 - 0.4 - 0.6 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71057 S-31989—Rev. C, 13-Oct-03