VISHAY SIZ902DT

New Product
SiZ902DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
30
Channel-2
30
RDS(on) () (Max.)
ID (A)
0.0120 at VGS = 10 V
16a
0.0145 at VGS = 4.5 V
16a
0.0064 at VGS = 10 V
16a
0.0083 at VGS = 4.5 V
a
16
Qg (Typ.)
6.8 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
21 nC
• Notebook System Power
• POL
• Synchronous Buck Converter
D1
PowerPAIR® 6 x 5
Pin 1
G1
1
5 mm
D1
2
D1
G1
D1
3
D1
N-Channel 1
MOSFET
4
G2
S1/D2
Pin 9
8
S1/D2
S2
7
6 mm
6
G2
5
N-Channel 2
MOSFET
Ordering Information: SiZ902DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Continuous Source Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Unit
V
a
16
16a
16
16a
14.3b, c
11.4b, c
50
16a
16a, b, c
16a, b, c
80
3.4b, c
18
16
29
18
16a
4.1b, c
30
45
66
42
4.2b, c
2.7b, c
5b, c
3.2b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Channel-2
30
± 20
a
IDM
Pulsed Drain Current (t = 300 µs)
Channel-1
A
mJ
W
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
b, f
t  10 s
Symbol
RthJA
RthJC
Channel-2
Typ.
Max.
Typ.
Max.
24
3.4
30
4.3
20
1.5
25
1.9
Unit
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 57 °C/W for channel-2.
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ902DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Ch-1
30
VGS = 0 V, ID = 250 µA
Ch-2
30
ID = 250 µA
Ch-1
ID = 250 µA
Ch-2
33
ID = 250 µA
Ch-1
-5
V
33
mV/°C
ID = 250 µA
Ch-2
VDS = VGS, ID = 250 µA
Ch-1
1
2.2
VDS = VGS, ID = 250 µA
Ch-2
1
2.2
- 4.6
Ch-1
± 100
Ch-2
± 100
VDS = 30 V, VGS = 0 V
Ch-1
1
VDS = 30 V, VGS = 0 V
Ch-2
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-1
5
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-2
VDS 5 V, VGS = 10 V
Ch-1
20
VDS 5 V, VGS = 10 V
Ch-2
20
V
nA
µA
5
A
VGS = 10 V, ID = 13.8 A
Ch-1
0.010
VGS = 10 V, ID = 20 A
Ch-2
0.0053 0.0064
VGS = 4.5 V, ID = 12.6 A
Ch-1
0.0120 0.0145
VGS = 4.5 V, ID = 20 A
Ch-2
0.0068 0.0083
VDS = 10 V, ID = 13.8 A
Ch-1
47
VDS = 10 V, ID = 20 A
Ch-2
63
0.012

S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Crss
Qg
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Rg
790
Ch-2
2600
Ch-1
190
Ch-2
485
pF
Ch-1
76
Ch-2
215
VDS = 15 V, VGS = 10 V, ID = 13.8 A
Ch-1
14
VDS = 15 V, VGS = 10 V, ID = 20 A
Ch-2
43
65
Ch-1
6.8
11
32
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 13.8 A
Ch-2
21
Ch-1
2.6
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 20 A
Ch-2
8.1
Ch-1
1.9
Qgs
Qgd
Ch-1
Ch-2
f = 1 MHz
21
nC
6.5
Ch-1
0.4
2
4
Ch-2
0.3
1.5
3

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
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Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ902DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Ch-1
15
30
Ch-2
23
50
Ch-1
12
20
Ch-2
20
40
Ch-1
20
40
Ch-2
35
70
Ch-1
10
20
Unit
Dynamica
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
td(on)
tr
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
IS
TC = 25 °C
td(off)
Ch-2
10
20
Ch-1
10
20
Ch-2
22
25
Ch-1
12
20
Ch-2
10
20
Ch-1
20
40
Ch-2
35
70
Ch-1
10
20
Ch-2
10
20
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
ISM
VSD
16
Ch-1
50
Ch-2
0.85
1.2
IS = 10 A, VGS = 0 V
Ch-2
0.8
1.2
Ch-1
20
40
Ch-2
25
50
Ch-1
10
20
Ch-2
13
25
Ch-1
11
Ch-2
12
Ch-1
9
Ch-2
13
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
80
Ch-1
trr
tb
16
Ch-2
IS = 10 A, VGS = 0 V
Channel-1
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
Ch-1
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ902DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
20
VGS = 10 V thru 4 V
16
I D - Drain Current (A)
I D - Drain Current (A)
50
40
VGS = 3 V
30
20
12
TC = 25 °C
8
4
10
TC = 125 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1200
0.014
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1000
0.012
VGS = 4.5 V
0.010
VGS = 10 V
Ciss
800
600
400
Coss
0.008
200
Crss
0
0.006
0
10
20
30
40
50
0
60
5
ID - Drain Current (A)
10
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.7
10
R DS(on) - On-Resistance (Normalized)
ID = 13.8 A
VGS - Gate-to-Source Voltage (V)
30
8
VDS = 15 V
6
VDS = 7.5 V
VDS = 24 V
4
2
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
Gate Charge
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4
15
1.6
ID = 13.8 A
1.5
VGS = 10 V; 4.5 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
-- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ902DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.030
100
ID = 13.8 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.025
10
TJ = 150 °C
TJ = 25 °C
1
0.020
TJ = 125 °C
0.015
TJ = 25 °C
0.010
0.005
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
1.9
50
1.8
1.7
40
1.6
Power (W)
VGS(th) (V)
1.5
ID = 250 µA
1.4
1.3
1.2
30
20
1.1
1.0
10
0.9
0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
Threshold Voltage
1
Time (s)
10
100
1000
Single Pulse Power
100
Limited by RDS(on)*
100 μs
10
ID - Drain Current (A)
0.1
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ902DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
50
25
20
30
Power (W)
ID - Drain Current (A)
40
20
Package Limited
15
10
10
5
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
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Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ902DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ902DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
80
VGS = 10 V thru 4 V
16
ID - Drain Current (A)
ID - Drain Current (A)
60
VGS = 3 V
40
12
TC = 25 °C
8
20
TC = 125 °C
4
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
VDS - Drain-to-Source Voltage (V)
0.0
2.0
0.5
Output Characteristics
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
3.0
Transfer Characteristics
0.008
3500
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
3000
VGS = 4.5 V
0.007
0.006
VGS = 10 V
0.005
2500
2000
1500
1000
Coss
Crss
500
0.004
0
20
40
ID - Drain Current (A)
60
0
80
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
10
ID = 20 A
RDS(on) - On-Resistance (Normalized)
VDS = 7.5 V
VGS - Gate-to-Source Voltage (V)
30
8
6
VDS = 15 V
VDS = 24 V
4
2
0
0
9
18
27
36
Qg - Total Gate Charge (nC)
Gate Charge
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8
45
ID = 20 A
VGS = 10 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ902DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.016
0.014
ID = 20 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
1
0.012
0.010
TJ = 125 °C
0.008
0.006
TJ = 25 °C
0.004
0.1
0.002
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.0
50
1.8
40
Power (W)
VGS(th) (V)
1.6
1.4
ID = 250 μA
30
20
1.2
10
1.0
0.8
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0
0.001
0.01
Threshold Voltage
0.1
1
Time (s)
10
100
1000
Single Pulse Power
1000
Limited by RDS(on)*
ID - Drain Current (A)
100
100 μs
10
1 ms
10 ms
1
100 ms
1s
10 s
TA = 25 °C
0.1
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
www.vishay.com
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ902DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
80
80
60
Power (W)
ID - Drain Current (A)
60
40
20
Package Limited
20
40
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ902DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 57 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63465.
Document Number: 63465
S11-2380 Rev. B, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
PowerPAIR® 6 x 5 Case Outline
2x
Pin 7
Pin 6
Pin 5
Pin 5
Pin 6
Pin 7
Pin 8
K
L
Pin 8
b
z
L3
A
D
0.10 C
E
E1
D1
K1
Pin #1 Ident
(Optional)
0.10 C
Pin 1
Pin 2
Pin 3
Pin 4
Pin 4
2x
Pin 3
E2
D1
Pin 2
Pin 1
e
TOP SIDE VIEW
BACK SIDE VIEW
0.10 C
A1
A3
b1
A
C
F
0.08 C
F
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
0.028
0.030
0.032
A1
0.00
-
0.10
0.000
-
0.004
A3
0.20 REF
0.008 REF
b
0.51 BSC
0.020 BSC
b1
0.25 BSC
0.010 BSC
D
D1
5.00 BSC
3.75
E
3.80
0.197 BSC
3.85
0.148
6.00 BSC
0.150
0.152
0.236 BSC
E1
2.62
2.67
2.72
0.103
0.105
0.107
E2
0.87
0.92
0.97
0.034
0.036
0.038
e
1.27 BSC
0.005 BSC
K
0.45 TYP.
0.018 TYP.
K1
0.66 TYP.
0.026 TYP.
L
0.43 BSC
0.017 BSC
L3
0.23 BSC
0.009 BSC
z
0.34 BSC
0.013 BSC
ECN: C11-1242-Rev. A, 07-Nov-11
DWG: 6005
Revision: 07-Nov-11
1
Document Number: 63656
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAIR® 6 x 5
7.080
(0.279)
2.720
(0.107)
8.080
(0.318)
5.820
(0.229)
0.407
(0.016)
0.567
(0.022)
1.960
(0.077)
(0,0)
2.185
(0.086)
2.153
(0.085)
3.260
Pin 1 (0.128)
0.616
(0.024)
3.920
(0.154)
0.970
(0.038)
0.700
(0.028)
1.270
(0.050)
0.407
(0.016)
0.560
(0.022)
Recommended Minimum Pad
Dimensions in mm (inches)
Document Number: 67480
Revision: 13-Jan-11
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000