SKM 800GA125D
Absolute Maximum Ratings
Symbol Conditions
IGBT
8 6 14 7
8 6 +4, 7
*=
" 6 147' % ! "#/
+1,,
:(,
5
" 6 ;, 7
4<,
5
+1,,
5
> 1,
+,
A
" 6 14 7
:1,
5
" 6 ;, 7
4,,
5
+1,,
5
4:,,
5
4,,
5
D, CCC E+4, +14
7
+14
7
D,,,
*=61)
Ultrafast IGBT Modules
SKM 800GA125D
"
6 (,, ? 3 1, ?
@ +1,, Units
" 6 14 7
SEMITRANS® 4
Values
8 6 +14 7
Inverse Diode
B
8 6 +4, 7
B*=
B*=61)B
B=
6 +, ? C
8 6 +4, 7
Module
*=
8
Features
!!
"##"
! "!" "$%&' %#
%
( ) Typical Applications
*
!! +,, -.
/" %"!
" %/! # 0 1,
-.
Remarks
2 3 4,, 5 %/ $& !
%
- "! # ! % "/
$& !& /"
"
%
5' + C
Characteristics
Symbol Conditions
IGBT
6 ' 6 1D 5
6 , ' 6 " 6 147' % ! "#/
8 6 14 7
min.
typ.
max.
D'4
4'4
('4
,'1
,'(
5
8 6 +14 7
,
5
8 6 14 7
+'4
8 6 +14 7
+':
8 6 147
1';
8 6 +147
!
6 +4 6 (,, 5' 6 +4 8 6 147"%
C
8 6 +147"%
6 14' 6 , # 6 + =.
!
*
/
!
/##
#
8 6 7
*
6 ,'4 F
*## 6 ,'4 F
##
*8"
! 6 (,,
6 (,,5
8 6 +14 7
6 > +4
Units
C
+':4
<'<
F
<';
4'D
F
<'1
<':4
D
<:
4'(
B
B
1';
B
+':
G
;;
H
D;
H
,',<
IJK
GA
1
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
Characteristics
Symbol Conditions
B 6 B
6 (,, 5? 6 , B,
!B
®
SEMITRANS 4
Ultrafast IGBT Modules
**=
M!!
B 6 (,, 5
!!
6 , ? 6 (,, *8"2
! //
min.
typ.
max.
Units
C
1'<
1'4
8 6 +14 7"%
1'+
1'<
8 6 14 7"%
C
8 6 14 7
+'+
+'<
8 6 +14 7
,'L
+',4
8 6 14 7
1
1
F
8 6 +14 7
1
1'+
F
8 6 14 7
<:,
;<
5
A
1;
H
,',:
Module
N
SKM 800GA125D
IJK
*OEO
1,
!C' !
%"
*"
! /%
=
- =(
=
!
% =(=D
"6 14 7
,'+;
F
"6 +14 7
,'11
F
,',<;
IJK
<
4
1'4 +'+
4 1
<<,
Features
!! This is an electrostatic discharge sensitive device (ESDS), international standard
"##"
! "!" "$%&' %#
%
( ) Typical Applications
*
!! +,, -.
/" %"!
" %/! # 0 1,
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
-.
Remarks
2 3 4,, 5 %/ $& !
%
- "! # ! % "/
$& !& /"
"
GA
2
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and diode
Fig. 10 CAL diode forward characteristic
Fig. 11 CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
4
28-04-2009 NOS
© by SEMIKRON
SKM 800GA125D
UL Recognized
File no. E 63 532
2 4L
2 4L
5
5
28-04-2009 NOS
© by SEMIKRON