SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are A L 3 3 C B Top View 1 1 FEATURES K Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper lead frame SC-59 saves board space. Fast switching speed. High performance trench technology. 2 E 2 D F REF. Application H G A B C D E F DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V ID 3.4 2.2 A A IDM 10 A IS 1.6 A PD 1.25 0.8 W W Tj, Tstg -55 ~ 150 °C ID @ TA=25°C ID @ TA=70°C Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 PD @ TA=25°C PD @ TA=70°C Power Dissipation 1 Operating Junction and Storage Temperature Range Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec Steady State RJA 100 166 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 11-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit VGS(th) 0.7 0.8 1.2 V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - - 100 nA VDS=0, VGS=8V Zero Gate Voltage Drain Current IDSS - - 1 - - 10 7 - - - - 76 - - 103 gfs - 7 - S VDS=5V, ID=1.5A VSD - 0.7 - V IS=1.6A, VGS=0 Gate-Threshold Voltage On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) Dynamic Qg - 3.5 - Gate-Source Charge Qgs - 0.55 - Gate-Drain Charge Qgd - 0.95 - Input Capacitance Ciss - 815 - Output Capacitance Coss - 175 - Reverse Transfer Capacitance Crss - 106 - Turn-on Delay Time Td(on) - 5 - Tr - 8 - Td(off) - 11 - Tf - 3 - Turn-off Delay Time Fall Time A VDS=16V, VGS=0 VDS=20V, VGS= 0, TJ= 55°C VDS=5V, VGS=4.5V mΩ VGS=4.5V, ID=3.4A VGS=2.5V, ID=2.9A 2 Total Gate Charge Rise Time μA Test Conditions nC pF nS VDS=10V, VGS=4.5V, ID=3.4A VDS=15V, VGS=0, f=1MHz VDD=10V, VGEN=4.5V, RL=6, RG=6 Notes: 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 11-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SMG2302N Elektronische Bauelemente 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 11-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SMG2302N Elektronische Bauelemente 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 11-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4