SPT5006 and SPT5008 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 10 AMPS 100 Volts High Power - High Speed NPN Transistors DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SPT5006 __ __ __ SPT5008 __ __ __ │ │ └ Screening 2/ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV Level │ │ S = S Level │ └ Lead Bend 3/ 4/ __ = Straight Leads │ UB = Up Bend │ DB = Down Bend └ Package 3/ /61 = TO-61 /3 = TO-3 M = TO-254 S1 = SMD1 • • • • • • • • Features: Radiation Tolerant Fast Switching, 100 ns Maximum td High Frequency, fT> 30MHz BVCEO 80 Volts Minimum High Linear Gain, Low Saturation Voltage 200oC Operating Temperature Designed for Complementary Use With SPT5007 and SPT5009 TX, TXV, S-Level Screening Available. Consult Factory. Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 80 Volts Collector – Base Voltage VCBO 100 Volts Emitter – Base Voltage VEBO 6 Volts Collector Current IC 10 Amps Base Current IB 3 Amps Total Power Dissipation @ TC = 50ºC Derate Above 50ºC PD 100 0.667 Watts W/ºC T J & TSTG -65 to +200 ºC R0JC 1.5 ºC/W Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO-61 (/61) TO-3(/3) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. TO-254 (M) SMD1 (S1) DATA SHEET #: TR0113A DOC SPT5006 and SPT5008 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics Symbol Min Max Units Collector – Emitter Blocking Voltage * (IC = 200 mA) BVCEO 80 –– Volts Collector – Base Blocking Voltage (IC = 200 µA) BVCBO 100 –– Volts Emitter – Base Blocking Voltage (IE = 200 µA) BVEBO 6 –– Volts Collector Cutoff Current (VCE = 40 V) (VCE = 60 V) ICEO ICES –– –– 50 1.0 μA μA Collector Cutoff Current (VCE = 100 V) (VCE = 60 V, VBE = 2 V, TC = 150ºC) ICEX ICEX –– 1.0 500 mA μA (VEB = 4 V) (VEB = 5.5 V) IEBO –– –– 1.0 1.0 μA mA 20 50 30 70 20 45 –– –– –– –– –– –– –– 90 200 –– –– 0.9 1.5 1.8 2.2 1.8 Volts fT 30 40 –– –– MHz Cob –– 275 pF Emitter Cutoff Current DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Base – Emitter Voltage* Current Gain – Bandwidth Product (IC = 100 mA, VCE = 5 V) 2N5006 2N5008 (IC = 5 A, VCE = 5 V) 2N5006 2N5008 (IC = 10 A, VCE = 5 V)2N5006 2N5008 (IC = 5 A, IB = 500 mA) (IC = 10 A, IB = 500 mA) (IC = 5 A, IB = 500 mA) (IC = 10 A, IB = 1 A) (VCE = 5 V, IC = 5 A) hFE VCE (SAT) VBE (SAT) VBE (ON) (VCE = 5 V, IC = 0.5 A, f = 20 MHz)2N5006 2N5008 Output Capacitance Delay Time Rise Time Storage Time Fall Time VCB = 10 V, IE = 0 A, f = 1.0MHz (VCC = 40 V, IC = 2 A, VEB (OFF) = 3.0 V, IB1 = IB2 = 200 mA) (tp = 2μs) Volts t(on) td tr –– –– 100 100 ns ns t(off) ts tf –– –– 2.0 200 μs ns NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows are available on request. 4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only. 5/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. 3/ For Package Outlines Contact Factory. Available Part Numbers: SPT5006/61, SPT5006/3, SPT5006M, SPT5006MUB, SPT5006MDB, SPT5006S1, SPT5008/61, SPT5008/3, SPT5008M, SPT5008MUB, SPT5008MDB, SPT5008S1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN ASSIGNMENT (Standard) Package Collector Emitter TO-61 (/61) Pin 3 Pin 1 TO-3 (/3) Case Pin 2 TO-254 (M) Pin 1 Pin 2 SMD1(S1) Pin 2 Pin 1 DATA SHEET #: TR0113A Base Pin 2 Pin 3 Pin 3 Pin 3 DOC