SSG4505
N Channel 10A, 30V,RDS(ON) 14mΩ
P Channel -8.4A, -30V,RDS(ON) 20mΩ
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
45
The SSG4505 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
o
0.375 REF
6.20
5.80
0.25
The SOP-8 package is universally preferred for all commercial
industrial surface mount application and suited for low
3.80
4.00
1.27Typ.
0.35
0.49
voltage applications such as DC/DC converters.
0.10~0.25
4.80
5.00
o
0
o
8
Features
1.35
1.75
Dimensions in millimeters
* Simple Drive Requirement
* Lower On-Resistance
* Fast Switching Performance
D1
D1
D2
D2
8
7
6
5
D1
D2
4505SS
Date Code
G2
G1
1
2
3
4
S1
G1
S2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
3
1
V
V
10
-8.4
A
o
ID@TA=70 C
7.9
-6.7
A
IDM
30
-30
A
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
-30
±20
o
T otal Power Dissipation
30
±20
ID@TA=25 C
3
Unit
o
VGS
Continuous Drain Current
Ratings
Symbol
Tj, Tstg
2.0
W
0.016
W/ C
-55~+150
o
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jan-2008 Rev. B
Symbol
3
Max.
Rthj-a
Ratings
62.5
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 7
SSG4505
N Channel 10A, 30V,RDS(ON) 14mΩ
P Channel -8.4A, -30V,RDS(ON) 20mΩ
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
o
Electrical Characteristics N Channel( Tj=25 C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Symbol
Min.
Typ.
Max.
Unit
BVDSS
30
_
_
V
_
0.02
_
V/oC
1.0
_
3.0
V
VDS=VGS, ID=250uA
_
_
±100
nA
VGS=± 20V
_
_
1
uA
VDS=30V,VGS=0
_
_
25
uA
VDS=24V,VGS=0
_
_
BVDS/ Tj
VGS(th)
Gate Threshold Voltage
IGSS
Gate-Source Leakage Current
Unless otherwise specified)
Drain-Source Leakage Current (Tj=25oC)
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
IDSS
o
Drain-Source Leakage Current (Tj=70 C )
2
Static Drain-Source On-Resistance
RDS(ON)
14
_
_
20
Qg
_
23
65
Gate-Source Charge
Qgs
_
6
_
Gate-Drain ("Miller") Charge
Qgd
_
14
_
Td(ON)
_
14
Total Gate Charge 2
Turn-on Delay Time2
Rise Time
Tr
Turn-off Delay Time
Fall Time
Input Capacitance
_
10
VGS=4.5V, ID=4A
nC
_
Tf
VDD=15V
ID=1 A
_
36
_
_
17
_
_
1770
2830
_
430
ID=9A
VDS=24V
VGS=4.5V
_
nS
Td(Off)
Ciss
VGS=10V, ID=6A
mΩ
_
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
350
_
Forward Transconductance
Gfs
_
14
_
VGS=10V
RG=3.3 Ω
RD=15 Ω
pF
VGS=0V
VDS=25V
f=1.0MHz
S
VDS=10V, ID=9A
Source-Drain Diode
Parameter
2
Symbol
Forward On Voltage
VSD
Reverse Recovery Time
Trr
Reverse Recovery Charge
Qrr
Min.
Typ.
_
_
_
_
31
25
Max.
Unit
1.2
V
_
nS
_
nC
Test Condition
IS=1.7A ,VGS=0V
IS=9A,V GS=0V
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 °C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jan-2008 Rev. B
Any changing of specification will not be informed individual
Page 2 of 7
SSG4505
N Channel 10A, 30V,RDS(ON) 14mΩ
P Channel -8.4A, -30V,RDS(ON) 20mΩ
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
o
Electrical Characteristics P-Channel( Tj=25 C Unless otherwise specified)
Parameter
Symbol
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
BVDS/ Tj
Min.
-30
_
Typ.
Max.
Unit
_
_
V
-0.02
_
VGS(th)
-1.0
_
-3.0
IGSS
_
_
_
_
_
_
_
_
o
Drain-Source Leakage Current (Tj=25 C)
V/ oC
Test Condition
VGS=0V, ID=-250uA
Reference to 25oC, ID=-1mA
V
VDS=VGS, ID=-250uA
±100
nA
VGS=± 20V
-1
uA
VDS=-30V,VGS=0
-25
uA
VDS=-24V,VGS=0
IDSS
Drain-Source Leakage Current (Tj=70oC)
2
Static Drain-Source On-Resistance
RDS(ON)
Total Gate Charge 2
Qg
Gate-Source Charge
Qgs
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time 2
Rise Time
Td(ON)
Tr
VGS=-10V, ID=-8A
20
mΩ
_
_
30
_
27
45
_
4
_
18
_
_
_
_
16
VGS=-4.5V, ID=-4A
nC
_
VDS=-15V
11
_
ID=-1A
nS
Turn-off Delay Time
Fall Time
Td(Off)
_
40
_
Tf
_
25
_
_
1580
2530
RD=15 Ω
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
450
_
Forward Transconductance
Gfs
_
14
_
Min.
Typ.
Max.
Unit
_
_
-1.2
V
_
nS
540
_
VGS=-10V
RG=3.3Ω
Input Capacitance
_
ID=-8A
VDS=-24V
VGS=-4.5V
pF
VGS=0V
VDS=-25V
f=1.0MHz
S
VDS=-10V, ID=-8A
Source-Drain Diode
Parameter
2
Symbol
Forward On Voltage
VSD
Reverse Recovery Time
Trr
Reverse Recovery Charge
Qrr
_
_
40
32
_
nC
Test Condition
IS=-1.7A, VGS=0V
IS=-8A,VGS=0V
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 °C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jan-2008 Rev. B
Any changing of specification will not be informed individual
Page 3 of 7
SSG4505
Elektronische Bauelemente
N Channel 10A, 30V,RDS(ON) 14mΩ
P Channel -8.4A, -30V,RDS(ON) 20mΩ
Enhancement Mode Power Mos.FET
Characteristics Curve N-Channel
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jan-2008 Rev. B
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 4 of 7
SSG4505
Elektronische Bauelemente
N Channel 10A, 30V,RDS(ON) 14mΩ
P Channel -8.4A, -30V,RDS(ON) 20mΩ
Enhancement Mode Power Mos.FET
N-Channel
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jan-2008 Rev. B
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 5 of 7
SSG4505
N Channel 10A, 30V,RDS(ON) 14mΩ
P Channel -8.4A, -30V,RDS(ON) 20mΩ
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
P-Channel
Description
GND
Typically a large storage capacitor is connected from this pin to ground to insure that the input
1.3V
or open= output enable.
tage does not sag below the minimum dropout voltage during the load
V higher than Vout in order for the device to
NC
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jan-2008 Rev. B
Fig 2. Typical Output Characteristics
Any changing of specification will not be informed individual
Page 6 of 7
SSG4505
Elektronische Bauelemente
N Channel 10A, 30V,RDS(ON) 14mΩ
P Channel -8.4A, -30V,RDS(ON) 20mΩ
Enhancement Mode Power Mos.FET
P-Channel
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
h tp://www.SeCoSGmbH.com/
01-Jan-2008 Rev. B
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 7 of 7