STF24NF12 N-channel 120V - 0.070Ω - 24A TO-220FP Low gate charge STripFET™ II MOSFET General features Type VDSS RDS(on) ID STF24NF12 120V <0.077Ω 24A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested 3 1 2 TO-220FP Description This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STF24NF12 F24NF12 TO-220FP Tube September 2006 Rev 2 1/12 www.st.com 12 Contents STF24NF12 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STF24NF12 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 120 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25°C 24 A ID Drain current (continuous) at TC=100°C 13 A Drain current (pulsed) 96 A Total dissipation at TC = 25°C 30 W Derating Factor 0.2 W/°C 9 V/ns IDM (2) PTOT dv/dt(3) Peak diode recovery voltage slope EAS(4) Single pulse avalanche energy 220 mj TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C 5 °C/W 1. Pulse with limited by safe operating area 2. Pulse width limited by safe operating area 3. ISD ≤24A, di/dt ≤600A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX 4. Starting Tj=25°C, ID=12A, VDD=30V Table 2. Rthj-case Thermal data Thermal resistance junction-case Max Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 3/12 Electrical characteristics 2 STF24NF12 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 12A Symbol Typ. Max. 120 1 10 µA µA ± 100 nA 3 4 V 0.070 0.077 Ω Typ. Max. Unit VDS = Max rating @125°C 2 Unit V VDS = Max rating, IDSS Table 4. Min. Dynamic Parameter gfs (1) Forward transconductance Ciss Coss Crss Qg Qgs Qgd Test conditions Min. VDS = 15V, ID = 15A 10 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 870 125 50 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD=80V, ID = 24A VGS =10V (see Figure 13) 30 6 10 72 nC nC nC Typ. Max. Unit 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 5. Symbol 4/12 Switching times Parameter Test conditions Min. td(on) tr Turn-on Delay Time Rise Time VDD = 50V, ID = 12A, RG = 4.7Ω, VGS = 10V (see Figure 12) 60 45 td(off) tf Turn-off-delay time Fall time VDD = 50V, ID = 12A, RG = 4.7Ω, VGS =10V (see Figure 12) 50 20 ns ns ns ns STF24NF12 Electrical characteristics Table 6. Symbol Source drain diode Max Unit Source-drain current 13 A ISDM(1) Source-drain current (pulsed) 96 A VSD(2) Forward on voltage 1.5 V ISD trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min Typ. ISD=24A, VGS=0 ISD=24A, di/dt = 100A/µs, VDD=30V, Tj=150°C (see Figure 14) 100 375 7.5 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12 Electrical characteristics STF24NF12 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STF24NF12 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 STF24NF12 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STF24NF12 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STF24NF12 TO-220FP MECHANICAL DATA mm. DIM. MIN. A inch TYP 4.4 MAX. MIN. TYP. 4.6 0.173 0.181 MAX. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 F F1 L7 L2 10/12 L5 1 2 3 L4 STF24NF12 5 Revision history Revision history Table 7. Revision history Date Revision Changes 31-may-2005 1 First issue 04-Sep-2006 2 New template, no content change 11/12 STF24NF12 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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